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    2SC 106 Search Results

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    2SC 106 Price and Stock

    Amphenol Aerospace JT00A-18-32SC(106)

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    Amphenol Aerospace JT02A-18-32SC(106)

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    Amphenol Aerospace JT00P-18-32SC(106)

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    Amphenol Aerospace JT07RE-24-2SC(106)

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    Amphenol Aerospace JT00RE-22-2SC(106)

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    2SC 106 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC106 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC106 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC106 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC106 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC106 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC106 Unknown Vintage Transistor Datasheets Scan PDF
    2SC106 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC106 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC106 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC106 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC106 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC106 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC106 Unknown Cross Reference Datasheet Scan PDF
    2SC1060 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1060 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC1060 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC1060 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1060 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC1060 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1060 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC 106 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3182N

    Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
    Text: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6


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    2SC387A 2SC1815 2SC2347 T2456 2460B 2SC2461 2461B 2SC2481 2SC2531 2SC3281 3182N 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B PDF

    tc 144e

    Abstract: 144EK
    Text: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4


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    2SC4082 2SC4818 2SC4063 2SC4617 2SD1664 2SD1768 2SD2098 2SC4672 2S02167 2SD2170 tc 144e 144EK PDF

    2SD1966

    Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
    Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5


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    2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


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    2SC3587 PDF

    2SC 3531

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5092 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure, High Gain. NF= 1.8dB, |S2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    2SC5092 2SC 3531 PDF

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


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    2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846 PDF

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


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    fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5097 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.2 Low Noise Figure, High Gain. N F = 1.8dB, |S 2 1 el2 = 10dB f=2GHz 2 .9 - 0.3 TT -a MAXIMUM RATINGS (Ta = 25°C)


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    2SC5097 PDF

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


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    fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643 PDF

    2sc1060

    Abstract: 2SC1061 2SA670 2SA671 JE1A to220aa TO-220-AA 2SCI061 TO-220AA
    Text: 2 S C 1 6 , 2 S C 1 6 1 v y 3 > NPN h â î tum SILIC O N NPN TRIPLE DIFFUSED_ 2SA670, 2S A 671 ¿: 3 > 7 'J * > £ >J ^< 7 LOW FREQUENCY POWER AMPLIFIER C o m p le m e n ta ry p a ir w ith 2 S A 6 7 0 and 2SA671 2SC 1060 1. ^ X • Base 2. z iv 7 9 '• C o lle c to r


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    2SA670, 2SA671 2SA670 2SC1060 2SC1061 O-220AA) T0-220AB) 2SC1060, 2SC1061 2sc1060 2SA671 JE1A to220aa TO-220-AA 2SCI061 TO-220AA PDF

    2SD424

    Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
    Text: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI


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    2SC3140 2SC3141 2SC1755 2SC515A 2SC2085 2SD314 2SD526 2SC2516 2SD1135 2SD1266A 2SD424 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023 PDF

    transistor 2SC930

    Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
    Text: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106


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    O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60 PDF

    2N6218

    Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
    Text: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39


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    013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2N6218 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P PDF

    2n6218

    Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533
    Text: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18


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    013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2n6218 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 PDF

    2SC 1885

    Abstract: 2sc low noise
    Text: T ransistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications.


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    O-220, SC-59/Japanese OT-23) 01CL2 2SC 1885 2sc low noise PDF

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


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    2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan
    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a PDF

    AF106

    Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
    Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72


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    023SbOS GGGHG47 AF106 AKTIEN6ESELLSCHAF25C AF106 AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106 PDF

    AF106

    Abstract: 40HHZ AF108
    Text: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz


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    Q60106-X106 120ms 23SbOS AF106 40HHZ AF108 PDF

    sanken power transistor 2SA1216

    Abstract: 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138
    Text: CONTENTS • Transistor Selection SANKEN POWER TRANSISTORS 2SC3854 •83 2SC4512 125 Guide .2 2SA1860 .43 2SA1907 . .4 4 2SC3855 84 2SC4517 126 ■ Reliability. 8 2SA1908 . 45


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    2SA1186. 2SA1215. 2SA1216. 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386A 2SA1488 2SA1860 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138 PDF