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    GTCAP 2SB727

    ELECTRONIC COMPONENT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB727 20
    • 1 $3.15
    • 10 $2.625
    • 100 $2.31
    • 1000 $2.31
    • 10000 $2.31
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    Renesas Electronics Corporation 2SB727K-E

    Power Bipolar Transistor, 6A, 120V, PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB727K-E 28 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.67
    • 1000 $1.51
    • 10000 $1.51
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    2SB727 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB727 Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
    2SB727 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB727 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB727 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB727 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB727 Unknown Scan PDF
    2SB727 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB727 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB727 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB727 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB727 Unknown Transistor Replacements Scan PDF
    2SB727 Unknown Cross Reference Datasheet Scan PDF
    2SB727(K) Hitachi Semiconductor Silicon PNP Darlington Transistor Original PDF
    2SB727K Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
    2SB727(K) Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB727K Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB727K Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB727K Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB727(K) Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB727K Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SB727 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD768

    Abstract: Hitachi DSA00279
    Text: 2SD768 K Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120


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    2SD768 2SB727 Hitachi DSA00279 PDF

    2SD768

    Abstract: 2SB727 DSA003644
    Text: 2SD768 K Silicon NPN Epitaxial ADE-208-900 (Z) 1st. Edition Sep. 2000 Application Medium speed and power switching complementary pair with 2SB727(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 3 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C)


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    2SD768 ADE-208-900 2SB727 O-220AB DSA003644 PDF

    Hitachi DSA002787

    Abstract: No abstract text available
    Text: 2SB727 K Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 1 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol


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    2SB727 2SD768 O-220AB D-85622 Hitachi DSA002787 PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    Hitachi DSA002787

    Abstract: No abstract text available
    Text: 2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 1 kΩ Typ 400 Ω (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


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    2SB1400 O-220FM D-85622 Hitachi DSA002787 PDF

    SA 79A General Semiconductor Inc

    Abstract: 2SB727 2SD768
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    D-85622 SA 79A General Semiconductor Inc 2SB727 2SD768 PDF

    MJ3001 equivalent

    Abstract: 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ3001 equivalent 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent PDF

    2N3055 TO220

    Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    TIP29B TIP30B TIP29C TIP30C TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2N3055 TO220 BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419 PDF

    2SA1046

    Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


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    2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 PDF

    mj15003 equivalent

    Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


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    MJ15003 MJ15004 MJ15003* MJ15004* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A mj15003 equivalent 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 BU326 BU100 PDF

    2SC2246

    Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,


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    2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 TIP73B TIP74 TIP74A TIP74B 2SC2246 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134 PDF

    transistor 2SA1046

    Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V


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    TIP33B* TIP33C TIP34B* TIP34C TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A transistor 2SA1046 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent PDF

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


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    2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100 PDF

    2SC1943

    Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


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    MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007 PDF

    mj150* darlington mj15002

    Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284


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    2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100 PDF

    IR642

    Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —


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    BD787, BD788 BD787 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A IR642 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661 PDF

    2SA1046

    Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.


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    2N6251 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB727 K Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TQ -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit C ollector to base voltage v CBQ -1 2 0 V C ollector to em itter voltage


    OCR Scan
    2SB727 2SD768 -220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB727 K Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB 2 l ì I 1 1 Base 2. Collector (Flange) 3. Emitter 2 1 k£2 (Typ) 400 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C)


    OCR Scan
    2SB727 2SD768 O-220AB D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB727 K Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline T O -2 2 0 A B 2 1 M [ 1. B a s e 1 |( 2. C o lle c to r W1 (F la n g e ) 2 3. E m itte r 1 kQ 400 Q (T y p ) (T yp ) ¿ 3 Absolute Maximum Ratings (Ta


    OCR Scan
    2SB727 2SD768 2SB727Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: H ITACH I 2SB727 K SILICON PNP EPITAXIAL MEDIUM SPEED AND POW ER SW ITCHING CO M PLEM ENTARY PAIR W ITH 2S D 7 6 8 K ; I . IJáNC 2 C’o H ecu x r « F j- i ü g c í 3 - E íM tK Í {iíío s e n s K H H in m m > JEDEC TO-220AB I ABSOLUTE M AXIM UM RATINGS i,Ta=250C)


    OCR Scan
    2SB727 O-220AB) 2SUT27® 2SB727® PDF

    2SB727

    Abstract: 2SD768
    Text: HITACHI 2SD768 -SILIC O N NPN EPIT A X IA L M EDIUM S P E E D AMD P O W E R SW IT C H IN G C O M P L E M E N T A R Y PA IR W ITH 2SB727 K z 1. B açç 2. Coltccior (Hange) S . E m in e r ( D i m e n s io n s in n u n ) (JE D E C TO-220AB) MAXIMUM C O L L E C T O R D ISSIP A T IO N


    OCR Scan
    2SD768 2SB727 O-22QAB) 2SD768Â PDF

    Nec K 872

    Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
    Text: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634


    OCR Scan
    2SB824 2SB596 2SB703 2SB942 2SB1334 2SB920 2SB595 2SB703A 2SB942A 2SA1634 Nec K 872 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601 PDF

    2SB737

    Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
    Text: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW


    OCR Scan
    2SB694H 2SB698 2SB703 2SB703A 2SB707 2SB708 2SD780A SC-59) 2SB736A 150mV 2SB737 2SB709 2SB718 2SB747 2SD601 2SD756 2SD756A PDF