2SB624 Search Results

2SB624 Result Highlights (5)

Part	Manufacturer	Description
2SB624-T2B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SB624-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SB624(0)-T1B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SB624-T1B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SB624A-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /

2SB624 Price and Stock

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NEC Electronics Group 2SB624-T1B(BV3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB624-T1B(BV3)		4,880			1 $0.74 10 $0.74 100 $0.74 1000 $0.222 10000 $0.148	Buy Now
Renesas Electronics Corporation 2SB624-T1B-A(BV4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB624-T1B-A(BV4)		961			1 $0.86 10 $0.86 100 $0.387 1000 $0.258 10000 $0.258	Buy Now
Renesas Electronics Corporation 2SB624-T1B-A(BV3/BV4) AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB624-T1B-A(BV3/BV4)		716			1 $0.86 10 $0.86 100 $0.387 1000 $0.258 10000 $0.258	Buy Now
NEC Electronics Group 2SB624-T1B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB624-T1B		527			1 $0.8 10 $0.8 100 $0.36 1000 $0.24 10000 $0.24	Buy Now
Renesas Electronics Corporation 2SB624-T1B-AT/S5 Single Bipolar Transistor, PNP, 25 V, 700 mA, 200 mW, SC-59, 3 Pins, Surface Mount (Alt: 2SB624-T1B-AT/S5)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	2SB624-T1B-AT/S5			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 2SB624 price and stock on Findchips.com

2SB624 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB624	Galaxy Semi-Conductor Holdings	Silicon Epitaxial Planar Transistor	Original	PDF
2SB624	Kexin	PNP Silicon Epitaxial Transistor	Original	PDF
2SB624	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SB624	NEC	Semiconductor Selection Guide	Original	PDF
2SB624	Transys Electronics	Plastic-Encapsulated Transistors	Original	PDF
2SB624	TY Semiconductor	PNP Silicon Epitaxial Transistor - SOT-23	Original	PDF
2SB624	Weitron	PNP Epitaxial Planar Transistors	Original	PDF
2SB624	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB624	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB624	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB624	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB624	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB624	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SB624	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SB624	NEC	AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD	Scan	PDF
2SB624BV1	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SB624BV1	NEC	Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Mini Mold	Scan	PDF
2SB624BV2	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SB624BV2	NEC	Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Mini Mold	Scan	PDF
2SB624BV3	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2SB624 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB624 Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4 Text: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596	Original	2SB624 OT-23 hFE200 -100mA) 2SD596 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV4 2SB624-BV5 2SB624 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4	PDF
BV4 pnp Abstract: BV4 transistor 2SB624 2SD596 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ	PDF
2SB624 Abstract: 2SD596 Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.	Original	2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624	PDF
2SB624 Abstract: No abstract text available Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA	Original	2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 2SB624	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ	PDF
2SB624 Abstract: 2SD596 BV4 transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23-3L 2SB624 OT-23-3L -100mA) 2SD596. -100mA -700mA -700mA, -70mA -10mA 2SB624 2SD596 BV4 transistor	PDF
bv5 300 Abstract: 2SB624 Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation	Original	2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 bv5 300 2SB624	PDF
sot-23 bv2 Abstract: marking BV4 2SB624 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage	Original	OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA sot-23 bv2 marking BV4 2SB624	PDF
2SB624 Abstract: No abstract text available Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624	PDF
sot-23 bv4 Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4	PDF
hFE-200 transistor PNP Abstract: 2SB624 Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624	PDF
D1802 Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)	Original	2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier	PDF
2SD596A Abstract: transistor DV3 D1788 2SB624 Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)	Original	2SD596A 2SB624 2SD596A transistor DV3 D1788	PDF

transistor dv4 Abstract: 2SD596 10MHZ 2SB624 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23-3L 2SD596 OT-23-3L 100mA) 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SD596 10MHZ 2SB624	PDF
Untitled Abstract: No abstract text available Text: Product specification 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05	Original	2SB624 OT-23 200TYP. -100mA) Storag00	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA	PDF
transistor dv4 Abstract: transistor DV3 2SD596 SOT23-3L Text: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	2SD596 OT-23-3L OT-23-3L 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 SOT23-3L	PDF
hFE-200 transistor PNP Abstract: TRANSISTOR BV3 Text: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2SB624 OT-23-3L OT-23-3L -100mA) 2SD596. -700mA -700mA, -70mA -10mA hFE-200 transistor PNP TRANSISTOR BV3	PDF
2SB624 Abstract: TRANSISTOR BV3 BV4 transistor Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage	Original	OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA 2SB624 TRANSISTOR BV3 BV4 transistor	PDF
2SB624 Abstract: 2SD596 Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom in millimeters 2.8 + 0.2	OCR Scan	2SB624 2SB624 2SD596 NECTOKJ22686	PDF
Untitled Abstract: No abstract text available Text: S IL IC O N T R A N S IS T O R 2SB624 A U D IO F REQ U EN CY PO W ER A M P L IF IE R P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom	OCR Scan	2SB624 2SB624	PDF
2SB641 r Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686 Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #	OCR Scan	2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686	PDF
2SB624 Abstract: 2SD596 marking ll Text: NEC Silicon T ran sisto r S ïf/ \ T 7 2SB624 P N P i t f f + S s T J U M S s y □> h # it 9 K w m ' , W V ' J v K IC ffl > L - riftilT - T o o h FE* fÎ 5 ^ 0 hpE : 200 T Y P . V 2 .8 ± 0.2 1.5 = - 1 .0 V , I c = -100 mA) c e O 2SD596 t =i > 7 °'l 9 > 9 'J T t o	OCR Scan	2SD596 2SB624 marking ll	PDF

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2SB624 Search Results

2SB624 Result Highlights (5)

2SB624 Price and Stock

NEC Electronics Group 2SB624-T1B(BV3)

Renesas Electronics Corporation 2SB624-T1B-A(BV4)

Renesas Electronics Corporation 2SB624-T1B-A(BV3/BV4)

NEC Electronics Group 2SB624-T1B

Renesas Electronics Corporation 2SB624-T1B-AT/S5

2SB624 Datasheets (29)

2SB624 Datasheets Context Search

2SB624

BV4 pnp

Untitled

2SB624

2SB624

Untitled

2SB624

bv5 300

sot-23 bv2

2SB624

sot-23 bv4

hFE-200 transistor PNP

D1802

2SD596A

transistor dv4

Untitled

Untitled

transistor dv4

hFE-200 transistor PNP

2SB624

2SB624

Untitled

2SB641 r

2SB624