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    2SB1502 TRANSISTOR Search Results

    2SB1502 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB1502 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1502

    Abstract: 2SD2275
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage


    Original     		PDF 2SD2275 2SB1502 2SB1502 2SD2275

    2SB1502

    Abstract: 2SD2275 2sb15
    Text: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120


    Original     		PDF 2SB1502 2SD2275 2SB1502 2SD2275 2sb15

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD2275 2SB1502

    2SB1502

    Abstract: 2SD2275
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage


    Original     		PDF 2SD2275 2SB1502 2SB1502 2SD2275

    2SB1502

    Abstract: 2SD2275
    Text: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120


    Original     		PDF 2SB1502 2SD2275 2SB1502 2SD2275

    2SB1502

    Abstract: 2SD2275
    Text: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120


    Original     		PDF 2SB1502 2SD2275 2SB1502 2SD2275

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 4.0 6.0 3.0 20.0±0.5 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SB1502 2SD2275

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage VCBO VCEO Emitter to base voltage VEBO Peak collector current


    Original     		PDF 2SD2275 2SB1502

    2SB1502

    Abstract: 2SD2275 2sb15
    Text: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Parameter Symbol Ratings Unit 120 V 100 V 5 V 8 A 5 A Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage


    Original     		PDF 2SD2275 2SB1502 2SB1502 2SD2275 2sb15

    2SB1502

    Abstract: No abstract text available
    Text: ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: Vce(sat)= -2.5V(Max.)@lc= -4A


    Original     		PDF 2SB1502 2SD2275 -120V 2SB1502

    2SB1502 TRANSISTOR

    Abstract: 2SB1502 2SD2275
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS


    Original     		PDF 2SD2275 -120V; -100V; 2SB1502 TRANSISTOR 2SB1502 2SD2275

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    D2029

    Abstract: D2328 2SD2340 2SD1641
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors VcEO (V) 50 100 140 Application Functions General-use lc (A) 7 5 7 10 15 20 6 6 20 4 10 3 80 Low VcE(sad 150 200 400 55 60 80/100 Darlington High-hre VcE(sat) (V)


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 D2029 D2328 2SD2340

    2SD2340 equivalent

    Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707

    2SD2340 equivalent

    Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent

    2SD1485

    Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258 2SD1485 2SD2340 equivalent audio Darlington 200 W

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266