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    2SB1151 Y Search Results

    2SB1151 Y Result Highlights (1)

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    2SB1151-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
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    Micro Commercial Components 2SB1151-Y-BP

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    2SB1151 Y Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1151-Y-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF

    2SB1151 Y Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  FEATURES *High Power Dissipation *Complementary to 2SD1691  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151G-x-AA3-R 2SB1151L-x-T60-K


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    2SB1151 2SD1691 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 O-252 PDF

    2SB1151 y

    Abstract: 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 *Pb-free plating product number: 2SB1151L „ ORDERING INFORMATION Ordering Number Normal


    Original
    2SB1151 2SD1691 2SB1151L 2SB1151-T60-K 2SB1151L-T60-K 2SB1151-TN3-R 2SB1151L-TN3-R 2SB1151-TN3-T 2SB1151L-TN3-T O-126 2SB1151 y 2SB1151 2SB1151L 2SD1691 2sb115 2SB1151-LAZ PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220  FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1  ORDERING INFORMATION Ordering Number Lead Free Plating


    Original
    2SD1691 O-220F1 O-220 2SB1151 O-126 O-126C 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x-TF1-T 2SD1691G-x-TF1-T PDF

    2SD1691L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-252 TO-251 1 1 TO-126  ORDERING INFORMATION Ordering Number


    Original
    2SD1691 O-220F1 O-220 2SB1151 O-252 O-251 O-126 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x-TF1-T 2SD1691L PDF

    2SD1691

    Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION


    Original
    2SD1691 O-220 2SB1151 O-126 O-126C 2SD1691L 2SD1691-x-T60-K 2SD1691L-x-T60-K 2SD1691-x-T6C-K 2SD1691L-x-T6C-K 2SD1691 transistor 2sd1691 2SB1151 2SD1691L 2SD*1691 PDF

    2SB1151L-T60-T

    Abstract: 2SB1151 2SB1151L 2SB1151-T60-T 2SD1691 1K TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W Ta=25℃ *Complementary to 2SD1691. 1 TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION


    Original
    2SB1151 2SD1691. 2SB1151L 2SB1151-T60-T 2SB1151L-T60-T O-126 QW-R204-022 2SB1151L-T60-T 2SB1151 2SB1151L 2SD1691 1K TRANSISTOR PDF

    2SB1151

    Abstract: 2SD1691
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


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    2SD1691 2SB1151 O-126C PW10ms Cycle50% QW-R217-003 2SB1151 PDF

    2SB1151 y

    Abstract: 2SB1151-L(AZ)
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R


    Original
    2SB1151 2SD1691 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 2SB1151 y 2SB1151-L(AZ) PDF

    2SB1151

    Abstract: 2SD1691 2SB1151 y XT60 2sb15
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ FEATURES *High Power Dissipation *Complementary to 2SD1691 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-T 2SB1151G-x-AA3-T


    Original
    2SB1151 2SD1691 2SB1151L-x-AA3-T 2SB1151G-x-AA3-T 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R OT-223 O-126 2SB1151 2SD1691 2SB1151 y XT60 2sb15 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original
    2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original
    2SD1691 2SB1151 O-126C QW-R217-003 PDF

    2SD1691

    Abstract: 2SB1151
    Text: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage


    Original
    2SD1691 2SB1151 O-126 PW10ms Cycle50% QW-R204-015 2SB1151 PDF

    2SD1691

    Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating


    Original
    2SD1691 O-220 2SB1151 O-220F1 O-126 O-126C 2SD1691L-x-T60-K 2SD1691G-x-T60-K 2SD1691L-x-T6C-K 2SD1691G-x-T6C-K 2SD1691 2SD1691L 2SB1151 TO-220F1 NPN PDF

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original
    2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    transistor 2sd1691

    Abstract: 2SD1691 2SB1151
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    UB2012X

    Abstract: UTC SOT223 MARKING 15-V 2SB1151 UB2012 SOP8 PNP Transistor Package 8.4v battery charger
    Text: UNISONIC TECHNOLOGIES CO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER „ DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status


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    UB2012 UB2012 QW-R121-018 UB2012X UTC SOT223 MARKING 15-V 2SB1151 SOP8 PNP Transistor Package 8.4v battery charger PDF

    UB2012X

    Abstract: UB2012C UB2012B UB2012 transistor marking code TS2
    Text: UNISONIC TECHNOLOGIES CO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER „ DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status


    Original
    UB2012 UB2012 QW-R121-018 UB2012X UB2012C UB2012B transistor marking code TS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UB2012 LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER  DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status


    Original
    UB2012 UB2012 QW-R121-018 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADV AN CED LI N EAR CH ARGE M AN AGEM EN T I C FOR SI N GLE AN D T WO-CELL LI T H I U M -I ON AN D LI T H I U M -POLY M ER ̈ DESCRI PT I ON UTC UB2012 is designed for portable electronics with lower cost. Its


    Original
    UB2012 UB2012 QW-R121-018 PDF

    2SD1617

    Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
    Text: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60


    OCR Scan
    2SB1116 2SB1116A 2SB1119 T0126ML) 2SB1141 2SD1682 2SB1142 2SD1683 2SD1617 2sb111 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124 PDF

    TFMt

    Abstract: 2SB1151 2SD1691 P111 S082 2SD*1691 Y0534
    Text: m C ï iS nQn * NEC ✓ < r7 — h "7 S ilic o n P o w e r T r a n s is to r 2 SB1151 y ? ; ! / ! > 'J 3 > P NPm > i> 7 ,9 n m m P N P Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use F EA T U R E S ?' fLl.'"tl ;>'ti ^


    OCR Scan
    2SB1151 O-126B sTa-25 2SD1691 y0534 il0298 TFMt 2SB1151 2SD1691 P111 S082 2SD*1691 PDF

    IH02

    Abstract: ts 4141 TRANSISTOR 2SB1151 2SD1691 T460
    Text: s<*7— S ilico n P o w e r T ra n s isto r 2SD1691 N P N ifc NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Medium Speed Switching Industrial Use #£/FEA TU RES ftWm / P A C K A G E DIMENSIONS O V E iiiL 'ff <, L t > ' Unit : mm i n ; V c ; K ( s a i ) ' t ’' i _ ,


    OCR Scan
    2SD1691 2SB1151 QK0276 Ffflsi0266 IH02 ts 4141 TRANSISTOR 2SB1151 2SD1691 T460 PDF

    2SD2232

    Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
    Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281


    OCR Scan
    2SD2230 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SB1500 2SD221 2SB1501 2sb1492 2SD2255 2SD2233 2SD2234 2SD2247 PDF