Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB1018A Search Results

    SF Impression Pixel

    2SB1018A Price and Stock

    Toshiba America Electronic Components 2SB1018A-Y(F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB1018A-Y(F) 483
    • 1 $13.5315
    • 10 $13.5315
    • 100 $13.5315
    • 1000 $9.021
    • 10000 $9.021
    Buy Now

    2SB1018A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1018(A) Unknown Silicon PNP Transistor Scan PDF
    2SB1018A Unknown PNP transistor Scan PDF
    2SB1018A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1018A Toshiba Silicon PNP triple diffused type transistor for high current switching, power amplifier applications Scan PDF
    2SB1018A Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE(PCT PROCESS) Scan PDF

    2SB1018A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1411A

    Abstract: 2SB1018A 2SD1411A
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)


    Original
    PDF 2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A

    B1018A

    Abstract: B1018 2SD1411A 2SB1018A
    Text: 2SB1018A 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB1018A 通 信 工 業 用 ○ 大電力スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。


    Original
    PDF 2SB1018A 2SD1411A 2-10R1A 20070701-JA B1018A B1018 2SD1411A 2SB1018A

    2SB1018A

    Abstract: 2SD1411A
    Text: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications


    Original
    PDF 2SB1018A O-220F 2SD1411A O-220F) 2SB1018A 2SD1411A

    B1018a

    Abstract: b1018 2SB1018A 2SD1411A
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original
    PDF 2SB1018A 2SD1411A B1018a b1018 2SB1018A 2SD1411A

    D1411A

    Abstract: 2SD1411A 2SB1018A D1411
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)


    Original
    PDF 2SD1411A 2SB1018A 2-10R1A D1411A 2SD1411A 2SB1018A D1411

    D1411A

    Abstract: No abstract text available
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)


    Original
    PDF 2SD1411A 2SB1018A 2-10R1A D1411A

    B1018a

    Abstract: b1018 2SB1018A 2SD1411A
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original
    PDF 2SB1018A 2SD1411A B1018a b1018 2SB1018A 2SD1411A

    B1018A

    Abstract: B1018
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original
    PDF 2SB1018A 2SD1411A 2-10R1A B1018A B1018

    D1411A

    Abstract: 2SB1018A 2SD1411A
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A

    2SB1018A

    Abstract: 2SD1411A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.


    Original
    PDF 2SB1018A 2SD1411A -100V; 2SB1018A 2SD1411A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original
    PDF 2SB1018A 2SD1411A

    D1411A

    Abstract: 552a 2SB1018A 2SD1411A
    Text: 2SD1411A 東芝トランジスタ シリコンNPN三重拡散形 2SD1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。


    Original
    PDF 2SD1411A 2SB1018A 2-10R1A D1411A 552a 2SB1018A 2SD1411A

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original
    PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original
    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original
    PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    GL9A040G

    Abstract: S8100B tc787 ms80A FB-78F9222MC fet p40 GL9A040 uPD78F9222 100uf10v 2SK982
    Text: 小ピンマイコン付DIP変換ボード 「FB-78F9222MC」を利用した バッテリーリフレッシャー 静岡県 辻村 誠司 様 はじめに ニッカド/ニッケル水素電池用のバッテリーリフレッシャー 一回きりの使い捨ての乾電池と異なり数百回も繰り返し充電して利用できるニッカド電池やニッケル水素電


    Original
    PDF FB-78F9222MC PD78F922 2SB761A FET2SK1958 uPD78F9222 GL9A040G S8100B tc787 ms80A FB-78F9222MC fet p40 GL9A040 100uf10v 2SK982

    TE2555

    Abstract: 20AS 2SB1018A 2SD1411 2SD1411A
    Text: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • Low Saturation Voltage : V q ^ s a t “ 0.5V (Max.) at Iq = 4A Complementary to 2SB1018A M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SD1411A 2SB1018A TE2555 20AS 2SD1411 2SD1411A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 0 1 8A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • • • High Collector Current : Iq = —7A Low Collector Saturation Voltage


    OCR Scan
    PDF 2SB1018A 2SD1411A

    ze 003 ic

    Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
    Text: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •


    OCR Scan
    PDF 2SB1018A 2SD1411A ze 003 ic c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB1018A HIGH CURRENT SWITCHING APPLICATIONS PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm 10 + 0.3 —I High Collector Current : I q = —7A


    OCR Scan
    PDF 2SB1018A 2SD1411A

    ze 003 ic

    Abstract: 2SB1018A 2SD1411A cc 1029
    Text: TO SH IBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ±0.3 r • • • High Collector Current : Ic = —7 A Low Collector Saturation Voltage


    OCR Scan
    PDF 2SB1018A 2SD1411A ze 003 ic 2SB1018A 2SD1411A cc 1029

    2SB1018A

    Abstract: 2SD1411A
    Text: TOSHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 0 1 8A HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • • • High Collector Current : Iq = —7A Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) (Ic = -4A )


    OCR Scan
    PDF 2SB1018A 2SD1411A 2SB1018A 2SD1411A

    20AS

    Abstract: 2SB1018A 2SD1411 2SD1411A
    Text: 2SD1411A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SD1411A 2SB1018A 20AS 2SD1411 2SD1411A

    20AS

    Abstract: 2SB1018A 2SD1411 2SD1411A
    Text: 2SD1411A TO SH IBA 2 S D 1 411 A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5< o f ml ÍY^ «îî m o Ö +i in 2.7±Q 2 ÏIT . r • • Low Saturation Voltage : Vq^ s a t “ 0.5V (Max.) at I q = 4A


    OCR Scan
    PDF 2SD1411A 2SB1018A 20AS 2SB1018A 2SD1411 2SD1411A