Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
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2SA812-M7
Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
hFE600.
2SA812-M7
2SA812M5
2SA812
2SA812M6
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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Original
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
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PDF
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2SA812
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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Original
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
2SA812
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PDF
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2SA812
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. 2SA812 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3
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2SA812
OT-23
-100mA,
-10mA
-10mA,
2SA812
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PDF
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2SA812
Abstract: marking M4
Text: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC
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2SA812
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
2SA812
marking M4
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PDF
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2SA812
Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
Text: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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2SA812
2SC1623
OT-23
-100mA
-10mA
062in
Width300uS
2SA812
m6 marking transistor sot-23
2SA812M6
2SA812-M6
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PDF
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2SA812
Abstract: 2SC1623 2SA812M6
Text: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage
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2SA812
2SC1623
-100mA
-10mA
062in
300uS
2SA812
2SC1623
2SA812M6
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PDF
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2SA812
Abstract: S1623 T812
Text: T812 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to S1623 Collector-Base Voltage :Vcbo= -50V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -50 V Collector-Emitter Voltage
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2SA812)
S1623
-30mA
062in
300uS
-10mA
2SA812
S1623
T812
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PDF
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m6 marking transistor sot-23
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier
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2SA812
2SC1623.
200typ.
OT-23
BL/SSSTC010
m6 marking transistor sot-23
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PDF
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NEC C11531E
Abstract: 2SA812 2SC1623 C11531E C1984
Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1
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2SA812
2SC1623
C11531E)
NEC C11531E
2SA812
2SC1623
C11531E
C1984
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PDF
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m6 marking transistor sot-23
Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier
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Original
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2SA812
2SC1623.
200typ.
OT-23
BL/SSSTC010
m6 marking transistor sot-23
sot-23 Marking M6
2SA812
Package M5 SOT23 transistor
transistor SOT23 m6
M6 SOT23
m5 marking transistor sot-23
dc m7 footprint
m6 sot package sot-23
2SC1623
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PDF
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2SA812
Abstract: Diode marking m7 m6 marking sot-23
Text: 2SA812 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous
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2SA812
OT-23
08-Dec-06
-10mA
OT-23
2SA812
Diode marking m7
m6 marking sot-23
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PDF
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m6 marking transistor sot-23
Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER
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OT-23
2SA812
OT-23
2SC1623
-100A,
-100mA,
-10mA
m6 marking transistor sot-23
2SA812
2SC1623
hFE-200
marking m5
m5 marking transistor sot-23
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2SA812M6
Abstract: 2SA812 2SC1623
Text: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage
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2SA812
2SC1623
-100mA
-10mA
062in
300uS
2SA812
2SA812M6
2SC1623
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PDF
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marking of m7 diodes
Abstract: 2SA812
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage
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OT-23-3L
2SA812
OT-23-3L
-10mA
marking of m7 diodes
2SA812
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA812 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current A ICM : -0.1
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Original
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OT-23
OT-23
2SA812
-10mA
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA812 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC
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Original
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2SA812
OT-23
14-Jun-2011
OT-23
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PDF
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2SA812
Abstract: 2SC1623
Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> PACKAGE DRAWING Unit: mm 0.4 +0.1 –0.05 2.8 ± 0.2 2 1 3 Marking 1. Emitter 2. Base 3. Collector 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 TYP. 2.9 ± 0.2 VCBO −60 V
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2SA812
2SC1623
2SA812
2SC1623
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m6 marking transistor sot-23
Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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Original
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2SA812
OT-23
OT-23
2SC1623
-100A,
-100mA,
-10mA
-10mA
m6 marking transistor sot-23
transistor SOT23 m6
hFE-200 transistor PNP
marking M6 transistor
M5 SOT23
2sa812
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PDF
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smd transistor m6
Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1
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2SA812
OT-23
temperat100
smd transistor m6
transistor smd marking m6
smd transistor M5
smd transistor m7
M6 smd transistor
smd transistor marking M6
m4 SMD Transistor
SMD TRANSISTOR M6 SOT23
smd transistor marking M6 PNP
smd transistor 2sa812
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA812 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. FNP EPITAXIAL SILICON TRANSISTOR ~~ TECHNICAL DATA LOW FREQUENCY AMPLIFIER * Compfemert to 2SC1623 ABSOLUTE MAXIMUM RATINGS at Tairib*2$°C Characteristic Symbol Rating Collector-Base Voltage Vcbo
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OCR Scan
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2SA812
2SC1623
300uS
-100uA
-100mA
-10mA
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PDF
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Untitled
Abstract: No abstract text available
Text: | FORWARD INTOBNAHONAL ELECTRONICS LID , 2SC1623 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECH N ICA L DATA LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. * Coiqplement to 2SA812 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Characteristic Symbol Rating Collector-Base Voltage
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OCR Scan
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2SC1623
2SA812
300uS
100uA
100mA
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PDF
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2SA812
Abstract: 2SC1623 MEI-1202 TC-5166 ic 926
Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters 2.8 ± 0.2 -8 Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. Vce = -6.0 V, Ic = -1 .0 mA
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OCR Scan
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2SA812
2SA812
2SC1623
MEI-1202
TC-5166
ic 926
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PDF
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