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    2SA81 Search Results

    2SA81 Result Highlights (5)

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    2SA811A-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA812A-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA812(0)-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SA812-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SA811A-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
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    2SA81 Price and Stock

    Rochester Electronics LLC 2SA812A-T1B-AT

    SMALL SIGNAL BIPOLAR TRANS PNP
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    DigiKey 2SA812A-T1B-AT Bulk 9,378,170 3,245
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    Rochester Electronics LLC 2SA812B-T1B-AT

    2SA812B-T1B-AT - PNP SILICON EPI
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    DigiKey 2SA812B-T1B-AT Bulk 201,000 4,121
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    Micro Commercial Components 2SA812-M4-AP

    TRANS PNP 50V 0.1A SOT23
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    Micro Commercial Components 2SA812-M5-AP

    TRANS PNP 50V 0.1A SOT23
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    Micro Commercial Components 2SA812-M6-TP

    Interface
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    DigiKey 2SA812-M6-TP Bulk 3,000
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    Mouser Electronics 2SA812-M6-TP 6,707
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    2SA81 Datasheets (244)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA81 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA81 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA81 Unknown Cross Reference Datasheet Scan PDF
    2SA81 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA81 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA81 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA81 Unknown Vintage Transistor Datasheets Scan PDF
    2SA81 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA81 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA810 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA810 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA810 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA810 Unknown Cross Reference Datasheet Scan PDF
    2SA810 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA810 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA810 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA810 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA810 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA811 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA811 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...

    2SA81 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd MARKING c17

    Abstract: marking C15 2SA811A SMD 6v Transistor MARKING C16 SOT-23 smd transistor marking c17
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF 2SA811A OT-23 -10mA -120V, smd MARKING c17 marking C15 2SA811A SMD 6v Transistor MARKING C16 SOT-23 smd transistor marking c17

    smd transistor m6

    Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1


    Original     		PDF 2SA812 OT-23 temperat100 smd transistor m6 transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812

    500ma 40v pnp

    Abstract: 2sA814 datasheet 2SA814 2SA815
    Text: Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications


    Original     		PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 500ma 40v pnp 2sA814 datasheet 2SA815

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA811A OT-23 -10mA -120V,

    A817A

    Abstract: 2SA817A 2SC1627A
    Text: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。


    Original     		PDF 2SA817A 2SC1627A O-92MOD 20070701-JA A817A 2SA817A 2SC1627A

    transistor c1627a

    Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
    Text: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC1627A 2SA817A. 35-watt O-92MOD transistor c1627a c1627a transistor c1627a 2SA817A 2SC1627A

    2SA814

    Abstract: 2SA815 2SA815 y 2SC1624
    Text: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications


    Original     		PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 2SA815 2SA815 y 2SC1624

    2SC1626

    Abstract: 2SA816
    Text: SavantIC Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current


    Original     		PDF 2SC1626 O-220C 2SA816 0-50W O-220) 2SC1626 2SA816

    2SA812K

    Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
    Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA


    Original     		PDF 2SA812K 2SC1623K OT-23 -100uA 100mA, -10mA 01-June-2002 2SA812K sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135

    NEC C11531E

    Abstract: 2SA812 2SC1623 C11531E C1984
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1


    Original     		PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA


    Original     		PDF 2SA812 hFE600. OT-23 60Vdc -100mAdc, -10mAdc)

    2SA812

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 2SA812

    2sc1627a

    Abstract: No abstract text available
    Text: 2SC1627A TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features — 0.400 0.600 13.800 14.200 Complementary to 2SA817A Driver Stage Application of 30 to 35 Watts Amplifiers — 1.500 TYP 2.900 3.100


    Original     		PDF O-92MOD 2SC1627A O-92MOD 2SA817A 200mA 2sc1627a

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC1627 励振段増幅用 電力増幅用 単位: mm • 2SA817 とコンプリメンタリになります。 • 20~25 W 用アンプのドライバに適しています。


    Original     		PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    2SC1627

    Abstract: 2SA817
    Text: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC1627 2SA817 SC-43 2SC1627 2SA817

    a817a

    Abstract: 2SA817A 2SC1627A
    Text: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。


    Original     		PDF 2SA817A 2SC1627A O-92MOD a817a 2SA817A 2SC1627A

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623

    Diode marking m7

    Abstract: marking of m7 diodes marking M4
    Text: MCC TM Micro Commercial Components 2SA812   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x High DC Current Gain:90Љ hFEЉ600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V x Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SA812 OT-23 Diode marking m7 marking of m7 diodes marking M4

    2SC1627A

    Abstract: No abstract text available
    Text: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)


    OCR Scan     		PDF 2SC1627A 2SA817A. O-92MOD 2SC1627A

    Untitled

    Abstract: No abstract text available
    Text: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


    OCR Scan     		PDF 2SA817A 2SC1627A. 75MAX

    applications of single stage common emitter

    Abstract: 2SA817A 2SC1627A
    Text: TOSHIBA 2SA817A 2SA817A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 M A X Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.


    OCR Scan     		PDF 2SA817A 2SC1627A. O-92MOD applications of single stage common emitter 2SA817A 2SC1627A

    2SA81

    Abstract: 2sA812R
    Text: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i


    OCR Scan     		PDF 2SA812 2SA812R 2SC1623 2SA81 2sA812R

    2SA812

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.


    OCR Scan     		PDF 2SA812 2SC1623 IEI-1209) 2SA812

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC C u rrent G ain: 500 TY P. {VCE = - 6 . 0 V , lc = - 1 . 0 m A ABSOLUTE MAXIMUM RATINGS M u x im u m Voltages and C u rrent


    OCR Scan     		PDF 2SA811A