2SA562
Abstract: 2SA562Y transistor 2SA562 2SA562-Y 2SA562-O 2SA562 Y
Text: 2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Excellent hFE Linearity G H CLASSIFICATION OF hFE Product-Rank 2SA562-O 2SA562-Y Range
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2SA562
2SA562-O
2SA562-Y
-100mA,
-10mA
-100mA
14-Jan-2011
-20mA
2SA562
2SA562Y
transistor 2SA562
2SA562-Y
2SA562-O
2SA562 Y
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PDF
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2SA562
Abstract: 2SA562 equivalent f-30MHz transistor 2SA562
Text: 2SA562 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃
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2SA562
-100mA
-100mA,
-20mA
30MHz
2SA562
2SA562 equivalent
f-30MHz
transistor 2SA562
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
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2SA562-O
2SA562-Y
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PDF
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2sa562y
Abstract: 2SA562-Y
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
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2SA562-O
2SA562-Y
2sa562y
2SA562-Y
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PDF
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2SA562
Abstract: transistor 2SA562
Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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Original
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2SA562
100mA
400mA
100mA,
2SA562
transistor 2SA562
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PDF
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2SA562
Abstract: 2sa562 equivalent transistor 2SA562
Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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Original
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2SA562
100mA
400mA
100mA,
2SA562
2sa562 equivalent
transistor 2SA562
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PDF
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2SA562
Abstract: No abstract text available
Text: 2SA562 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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Original
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2SA562
-100A
-100A,
-100mA
-100mA,
-10mA
-20mA
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PDF
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2SA562
Abstract: To92 transistor transistor 2SA562
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TO-92 TRANSISTOR PNP FEATURES • Excellent hFE linearlity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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Original
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2SA562
-100A,
-100mA
-100mA,
-10mA
-20mA
2SA562
To92 transistor
transistor 2SA562
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PDF
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2SA562
Abstract: No abstract text available
Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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Original
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2SA562
100mA
400mA
100mA,
2SA562
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PDF
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2SA562
Abstract: No abstract text available
Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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Original
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2SA562
100mA
400mA
100mA,
2SA562
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PDF
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2SA562 equivalent
Abstract: 2SA562
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V
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Original
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2SA562
-100mA
-100mA,
-20mA
30MHz
2SA562 equivalent
2SA562
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR PNP 1. EMITTER FEATURES Excellent hFE Linearlity 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value
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Original
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2SA562
-100mA
-100mA,
-10mA
-20mA
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA562 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearlity G Emitter Collector Base H J A REF. D A B C D E F G H J K B K
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Original
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2SA562
-100mA
-20mA
29-Apr-2010
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PDF
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2SA562
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range
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Original
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2SA562
-10base
-100mA
-100mA,
-20mA
30MHz
2SA562
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO: -35 V Operating and storage junction temperature range
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2SA562
30MHz
270TYP
050TYP
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02BZ2
1S2092
1SZ5759
02CZ2
1S2094
2N3055
02CZ5
1S2095A
2N3713
02Z24A1M
mg75n2ys40
MG15N6ES42
2SK150A
2sk270a
MG150n2ys40
MG8N6ES42
MG15G1AL2
mg75j2ys40
MG30G1BL2
S2530A
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PDF
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2SA562
Abstract: transistor 2SA562
Text: VI cc TO-92 P lastic-E n capsu iate T ran sisto rs 2SA562 TRANSISTOR NPN FE ATURES P cm : 0.5W (Tamb=25°C) Icm : -0.5 A É ü li lÉ É y ftMie voltage V(8R)CBO: -35 V storage junction temperature range Tj.Tsig: -55°C to + 150“C ELECTRICAL CHARACTERISTICS
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OCR Scan
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2SA562
30MHz
25min
40min
2SA562
transistor 2SA562
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PDF
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2SC735
Abstract: 2sC735 transistor 2SA562 2SA56 2SC735 0 2SA562 TOSHIBA TOSHIBA 2SC735 a-45J CMA120 Produced by Perfect Crystal Device Technology
Text: ^vnypNPxeyz^uBh^yvzviPCTm 2 s a 562 O o PNP 2SC 735 t ; V c E e a t) = - 0 .2 5 V (M ax .) => y y p / V 9 y Ki t 0 i t o Complementary to 2SC735 Mt'k'SL'fe MAXIMUM RATINGS CHARACTERISTIC X.IV9 (xa = 25 °C) SYMBOL HATING UNIT VCBO - 30 V * i i y 9 IH flS
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OCR Scan
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2sa562
2SC735
2SC735
2SA56
Ta-25Â
2sC735 transistor
2SA562
2SC735 0
2SA562 TOSHIBA
TOSHIBA 2SC735
a-45J
CMA120
Produced by Perfect Crystal Device Technology
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PDF
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2SC875 D
Abstract: 2N5816 2SC875 2SA532 2SA503 2SA504 2N5822 2SC87 2sc1175 2N5819
Text: TYPE NO. P O L A R IT Y Medium Power Amplifiers and Switches CASE 'c A V CEO (V) min max 625 625 625 625 625 0.75 0.75 0.75 0.75 1 40 40 40 40 60 100 100 150 150 60 200 200 300 300 120 1 1 1 0.2 2 60 60 60 50 30 60 100 100 200 50 2 2 2 2 2 1 40 60 30 40
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OCR Scan
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2N5816
O-92F
2N5817
2N5817
2N5816
2N5818
2N5819
2N5819
2SC875 D
2SC875
2SA532
2SA503
2SA504
2N5822
2SC87
2sc1175
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PDF
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2SA562
Abstract: No abstract text available
Text: A 562 TRANSISTO R NPN FEATURES P o w e r d is s ip a tio n P cm: 0.5W (Tamb=25°C) C o lle c to r c u rre n t Icm; -0.5 A C o lle c to r-b a s e v o lta g e V(BR)CBO; -35 V O p e ra tin g and s to ra g e ju n c tio n te m p e ra tu re range -55°C to + 150°C
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OCR Scan
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2SA562
-100u
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PDF
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2SC735
Abstract: 2sC735 transistor 2SC735 Y TRANSISTOR N 1380 600 300 SC 2SC735 0 0A45 2SA562 Produced by Perfect Crystal Device Technology TOSHIBA 2SC735 2SC735 O
Text: 2SC o 735 NPN EPITA XIA L TRANSISTOR P C T PROCESS t ä m m m m m O lÆ ü fiffl o ^ ' i ' y ^ - v r m o 5 / U D ^ N P N I t r 9 ^ 2/? J l/} B h 5 ^ ^ ( P C T B Ä ) ^ IL IC O N D riv e r S ta g e A m p lifie r, Power A m p lifier and Sw itching A p p lic a tio n s .
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OCR Scan
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2sc735
2SA562
058MAX.
04S5MAX.
2SC735
2sC735 transistor
2SC735 Y
TRANSISTOR N 1380 600 300 SC
2SC735 0
0A45
2SA562
Produced by Perfect Crystal Device Technology
TOSHIBA 2SC735
2SC735 O
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PDF
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2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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OCR Scan
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
2SK 150A
mg100g1al2
2SD1365
2SC2461 B
2sk30
2SC102
C366G
b1375
MG15G1AL2
1265N
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PDF
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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OCR Scan
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
b1375
2sk270a
2SK150A
MG15G1AL2
2SA1051b
MG50G2CL1
mg100g1al2
2SA1015
A1265N
MG100G1AL1
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PDF
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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PDF
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