2SA490
Abstract: 2SC790 2SC790 O
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA490 DESCRIPTION •High Collector Current: IC= -3A ·Collector-Emitter Breakdown Voltage : V BR CEO= -40V(Min) ·Complement to Type 2SC790 APPLICATIONS ·10 Watts output applications
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2SA490
2SC790
2SA490
2SC790
2SC790 O
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2SA490
Abstract: 2sc790
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA490 DESCRIPTION •High Collector Current: IC= -3A ·Collector-Emitter Breakdown Voltage : V BR CEO= -40V(Min) ·Complement to Type 2SC790 APPLICATIONS ·10 Watts output applications
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2SA490
2SC790
-10mA
2SA490
2sc790
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2SA490
Abstract: 2SA490 POWER 2sc790
Text: SavantIC Semiconductor Product Specification 2SA490 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC790 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base
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2SA490
O-220
2SC790
O-220)
2SA490
2SA490 POWER
2sc790
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2sc790
Abstract: 2SA490
Text: JMnic Product Specification 2SA490 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC790 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base
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2SA490
O-220
2SC790
O-220)
2sc790
2SA490
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25X2
Abstract: 2SA490 2SC790 2SC790 O
Text: AOK Product Specification AOK Semiconductor 2SA490 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC790 APPLICATIONS • For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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OCR Scan
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2SA490
O-220
2SC790
300t0
25X2
2SC790 O
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Untitled
Abstract: No abstract text available
Text: It TOSHIBA {DISCRETE/OPTO} D e | cìD c172S0 000742^ b | _/ 9097250 T O S H IB A D IS C R E T E /O P T O 56. 07^29 D 7^ -J1 3 - 0 ^ SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) Unit in mm 9 3.6 10.3 MAX. POWER AMPLIFIER APPLICATIONS, FEATURES: . Complementary to 2SA490.
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OCR Scan
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c172S0
2SA490.
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2sc790
Abstract: transistor 2SC 790 c790 2SA490 AC75 jd2030 SS4490 2SC790 O
Text: 2 s c 790 o ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR n tim m m o Power Amplifier Applications 3 S A 4 9 0 £ 3 V 7 *iJ H i - F i OTL / y jt ' J T t i i ^ l O W ^ ^ ^ 7 y 7 K M '& 'Z 't o Complementary to 2SA490 10 Watts Output is Available. MAXIMUM RATINGS Ta=g5"C
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SS4490
2SA490
220AB
2sc790
2sc790
transistor 2SC 790
c790
AC75
jd2030
2SC790 O
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2sd331
Abstract: 2sc1061
Text: Power Transistors TYPE POLA CASE NO. RITY MAXIMUM RATINGS P* VcEO Ic W (A) (V) Hre min max Ic (A) VCE (V) VcE(«ag max (V) Ic (A) fT COMPLE min MENTARY (MHz) TYPE . 2SD366 2SD366A 2SD330 2SD331 2SB513 2SB513A 2SB514 2SB515 2SB523 P P P P P TO-220 TO-220
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2SB513
2SB513A
2SB514
2SB515
2SB523
2SB526
2SB529
2SB566AK
2SC789
2SC790
2sd331
2sc1061
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2sb526
Abstract: 2SB529 2SC789 2SA816 2SD331 2SB513A 2SB514 2SB515 2SB523 2SB566AK
Text: Power Transistors TYPE NO. IC mA VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE MENTARY TYPE # # ft ft ft 1 1 1 0.5 0.3 3 2 2 4 4 1 1 1 2 1 2 2 2 1.5 0.3 8+ 8+ - 2SD366A 2SD330 2SD331 - ft 4 4 5 2 4 1 1 1.5 1.4 10 1.5 1 3 2 2 - - # # # 0.5 1 0.5 0.5
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OCR Scan
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2SB513A
O-220
2SD366A
2SB514
2SD330
2SB515
2SD331
2SB523
2sb526
2SB529
2SC789
2SA816
2SD331
2SB566AK
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2n6125
Abstract: No abstract text available
Text: Power Transistors TYPE POLA NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100
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OCR Scan
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MH8100
MH8106
MH8108
MH8700
MH0810
MH0816
MH0818
2n6125
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2sc1061
Abstract: 2SC1626 2N6108
Text: Power Transistors TYPE POLA CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40
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OCR Scan
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D45C12
MH0810
MH0816
MH0818
MH0870
MH8100
MH8106
MH8108
MH8500
MH8700
2sc1061
2SC1626
2N6108
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2SB512P
Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
Text: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE M ENTARY
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OCR Scan
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MH0870
O-220
MH8700
MH8100
O-22C
MH0810
MH8106
MH0816
H8108
2SB512P
tip318
TIP31N
TIP308
TIP298
2sb435
2sc1060
MH8500
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2SA490-0
Abstract: B0934 2SA699A matsua 2SB435Y 1S2525 2sb856 043C4 MJ2253 2SA1359Y MJE2370
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 - 45 50 B0934 B0934F B0934F 043C5 043C6 B0132 2N3025 PTC142 2SB744 2SB744 2SB503A 2SB503A-R 2SA748 2SA748 KT816B 2SA670 2SA671 2SB434 2SB434 ~~~:~:G-R 55 60 65 - 70 IOB434 2SB434R 2SB503A-O
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O-220AB
O-220
OT-186
O-126var
O-127var
2SA490-0
B0934
2SA699A matsua
2SB435Y
1S2525
2sb856
043C4
MJ2253
2SA1359Y
MJE2370
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2sc630
Abstract: KT817B IDB434 2SD130 2SB1003 2N3167 MOTOROLA 2sd1369 bd57 2SC790R 2N319
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T (V) (W) Min (Hz) r •CBO Max Max (A) (8) (CE)ut Max (Ohms) Top«r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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KT817A
2SD91
IDB1023
IDD1413
2SB1003
2SD1369
BDY34
2N3632
See00n
2sc630
KT817B
IDB434
2SD130
2N3167 MOTOROLA
bd57
2SC790R
2N319
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2N6609
2N3773)
2N6667
2N6668
220AB
2N6387,
2N6388
2SD669 equivalent
BD801
BDY29 equivalent
BU108
2SC2080
2SD436
2N6021
BD345
tip122 D-PAK package
2SD544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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MJF6107
2N6107
E69369,
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SC495
NSP41A
BU108
transistor BD614 MOTOROLA
2SA663
BD4122
BD661
MJ1000
NSP2100
D45VH4 similar
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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MJE521
MJE371
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
mje521 equivalent
BU108
2N3055 plastic
2N6488 MOTOROLA
Motorola transistors MJE3055 TO 127
3904 Transistor
BDX54
tip122 tip127 audio amp
BU326
BU100
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055
BU108
AN415A
MJE2955T ST
BDX54
2n3055 audio amplifier application note
BU326
BU100
mje13005
BDV64
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2N5630,
2N6030
2N5631,
2N6031
2N5630
2N5631
2N5631 equivalent
2N5630 "cross-reference"
Chomerics
BU108
2SA1046
tip122 tip127 audio amp
BU326
BU100
2sd313 equivalent
NPN/TIP42C as regulator
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
BD179-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BD179-10 equivalent
BU108
2SA1046
2SC7
BDX54
BUX98A
BU326
BU100
bul1
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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MJL3281A
MJL1302A
MJL3281A*
MJL1302A*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
sec tip41c
MJE493
2SC1419
2sc3281
2n3055 audio output circuit
BDW93
MJ1000
BDW83
buv98a cross reference
2SC1943
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PDF
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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TIP47
E69369,
MJF47
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TRANSISTOR BC 384
BU108
bd139 equivalent transistor
2N3055 equivalent
RCA1C03
transistor Bc 574
BU326
BU100
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PDF
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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MJ11018,
MJ11022,
MJ11017
MJ11021*
MJ11018*
MJ11022
TIP73B
TIP74
TIP74A
TIP74B
MJ11017 equivalent
BU108
MJ11021
BU326
BU100
MJE3055T
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