m2017
Abstract: M1042 2N6661-2 M1051 m2017a 6863-2
Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω
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2N6661-2
O-205AD
18-Jul-08
m2017
M1042
2N6661-2
M1051
m2017a
6863-2
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part marking information vishay HD 1
Abstract: No abstract text available
Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω
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2N6661-2
2N6661-2
O-205AD
11-Mar-11
part marking information vishay HD 1
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2N6661-2
Abstract: M1042
Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω
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2N6661-2
O-205AD
11-Mar-11
2N6661-2
M1042
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JANTXV2N6661
Abstract: JANTX2N6661 JANTXV2N6661P JANTX2N6661 reliability
Text: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS
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2N6661,
2N6661-2,
2N6661JANTX,
2N6661JANTXV
O-205AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
JANTXV2N6661
JANTX2N6661
JANTXV2N6661P
JANTX2N6661 reliability
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Untitled
Abstract: No abstract text available
Text: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS
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2N6661,
2N6661-2,
2N6661JANTX,
2N6661JANTXV
O-205AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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2N6661
Abstract: VN88AFD
Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS
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2N6661/VN88AFD
2N6661
VN88AFD
08-Apr-05
2N6661
VN88AFD
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part marking information vishay HD 1
Abstract: No abstract text available
Text: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS
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2N6661,
2N6661-2,
2N6661JANTX,
2N6661JANTXV
O-205AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
part marking information vishay HD 1
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jantx2n6661
Abstract: JANTX2N6661 reliability
Text: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS
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2N6661,
2N6661-2,
2N6661JANTX,
2N6661JANTXV
O-205AD
11-Mar-11
jantx2n6661
JANTX2N6661 reliability
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TO-205AD
Abstract: 2N6661 VN88AFD
Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
P-37655--Rev.
25-Jul-94
TO-205AD
2N6661
VN88AFD
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vn88afd
Abstract: 2N6661 2N6661S
Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS
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2N6661/VN88AFD
2N6661
VN88AFD
18-Jul-08
vn88afd
2N6661
2N6661S
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VN88AFD
Abstract: N-CHANNEL MOSFET 2N6661
Text: 2N6661/VN88AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
P-37655--Rev.
VN88AFD
N-CHANNEL MOSFET
2N6661
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2N6661
Abstract: 2N6661 Siliconix VN88AFD marking code vishay SILICONIX to-39
Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
S-04279--Rev.
16-Jul-01
2N6661
2N6661 Siliconix
VN88AFD
marking code vishay SILICONIX to-39
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VN88AFD
Abstract: 2N6661
Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
P-37655--Rev.
25-Jul-94
VN88AFD
2N6661
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2N6661
Abstract: VN88AFD
Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
P-37655--Rev.
25-Jul-94
2N6661
VN88AFD
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2N666I
Abstract: No abstract text available
Text: Tem ic 2N6661/VN88AFD Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) fDS(on) Max (fi) V GS(th) (Y ) I d (A) ï: ; 2N6661 90 4 @ VGs = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 10 V 0.8 to 2.5 1.29 Features Benefits
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2N6661/VN88AFD
2N6661
VN88AFD
P-37655--
2N666I
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88AFD
Abstract: No abstract text available
Text: Tem ic 2N6661/VN88AFD Se c o n du c t o r s it i N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR DSS Min (V ) rus< on) M a x ( f i ) V g S(Ui ) (V ) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 I d (A ) 0.9 VN 88AFD 80 4 @ VGs = 10 V
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2N6661/VN88AFD
2N6661
88AFD
P-37655--
25-Jul-94
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VN66AF equivalent
Abstract: sony 2sj54 2N6658 buz 350 equivalent CROSS REFERENCE VN99AB VN66AF vn99ab VN0108N2 VN46AF IRF232
Text: Siliconix 1-1? f l oa < 2N6661 • VN99AB ■ VN90AB B S ilic o n ix 90V MOSPOWER These pow er F E T s are design ed e sp e c ia lly for low pow er high frequency inverters, interface to C M O S and TTL logic, and line drivers. FEATURES liw v K1ÄÄÄ4 I ■
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN66AF equivalent
sony 2sj54
2N6658
buz 350 equivalent
CROSS REFERENCE VN99AB
VN66AF
vn99ab
VN0108N2
VN46AF
IRF232
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VN66AF equivalent
Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN66AF equivalent
VN67AF equivalent
mospower cross vn66af
VN66AF
2N6658
irf540 equivalent
irf540 TTL
VN67AF
VN88AD
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irf542 equivalent
Abstract: 2N6658 equivalent IRF640 FI IRF540 irf540 equivalent VN0108N2 2N865 CROSS REFERENCE 2n6661 VN46 IRF232
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
irf542 equivalent
2N6658
equivalent IRF640 FI
irf540 equivalent
VN0108N2
2N865
CROSS REFERENCE 2n6661
VN46
IRF232
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0808M
Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Text: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS
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VN0808L
0808L
0808M
O-237
VN0808M
BSR67
VN0808L equivalent
VN0808L
2N6661
2n666
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mospower cross vn66af
Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
mospower cross vn66af
VN88AF
CROSS REFERENCE VN99AB
OLS 049
2SJ54 sony
IRF542
2N6658
CROSS REFERENCE 2n6661
VN0209N2
VN88
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mospower cross vn66af
Abstract: VN66AF equivalent 2N6658 IRF540 2SJ54 BUZ44 irf540 equivalent VN0400 BUZ24 IRF232
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
mospower cross vn66af
VN66AF equivalent
2N6658
2SJ54
BUZ44
irf540 equivalent
VN0400
BUZ24
IRF232
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VN90AB
Abstract: 2N6658 VN67AF equivalent 2n6659 equivalent 2SK173 BUZ 20 BUZ33 VN46AF equivalent VN67AF cross reference IRF240
Text: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN90AB
2N6658
VN67AF equivalent
2n6659 equivalent
2SK173
BUZ 20
BUZ33
VN46AF equivalent
VN67AF cross reference
IRF240
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2N6658
Abstract: siemens LFL 1 635 IRF540 mospower cross vn66af VN64GA BUZ23 SIEMENS IRF232 IRF240 IRF422 IRF522
Text: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
2N6658
siemens LFL 1 635
mospower cross vn66af
VN64GA
BUZ23 SIEMENS
IRF232
IRF240
IRF422
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