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    2N6659 Price and Stock

    Vishay Intertechnologies 2N6659-E3

    Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:1.4A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W Rohs Compliant: Yes |Vishay 2N6659-E3
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    Newark 2N6659-E3 Bulk 100
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    Vishay Siliconix 2N6659

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    Bristol Electronics 2N6659 10
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    2N6659 8 1
    • 1 $6.72
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    Quest Components 2N6659 140
    • 1 $77.7888
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    2N6659 35
    • 1 $4.44
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    2N6659 6
    • 1 $9
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    2N6659 5
    • 1 $4.44
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    2N6659 1
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    ComSIT USA 2N6659 100
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    Motorola Semiconductor Products 2N6659

    MOSFET Transistor, N-Channel, TO-39
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    Quest Components 2N6659 1
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    Solitron Devices Inc 2N6659

    MOSFET Transistor, N-Channel, TO-39
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    Quest Components 2N6659 1
    • 1 $77.7888
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    Others 2N6659

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    2N6659 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6659 Motorola FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor Original PDF
    2N6659 Philips Semiconductors N-Channel Vertical DMOS Transistor Original PDF
    2N6659 Semelab N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR Original PDF
    2N6659 Motorola Switchmode Datasheet Scan PDF
    2N6659 Motorola European Master Selection Guide 1986 Scan PDF
    2N6659 Motorola TMOS SWITCHING FET TRANSISTORS Scan PDF
    2N6659 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6659 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6659 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6659 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6659 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6659 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6659 Unknown FET Data Book Scan PDF
    2N6659 Semelab MOS Transistors Scan PDF
    2N6659 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2N6659 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    2N6659 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    2N6659 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    2N6660

    Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
    Text: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh


    Original     		PDF 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711

    2N6659-E3

    Abstract: 2N6659-2
    Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified


    Original     		PDF 2N6659, 2N6659-2 O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2N6659-E3 2N6659-2

    MOSFET 2n6659

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated 1 VDS VGS ID ID IDM1 PD Drain – Source Voltage Gate – Source Voltage Drain Current Drain Current


    Original     		PDF 2N6659X O-205AD) MOSFET 2n6659

    Untitled

    Abstract: No abstract text available
    Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified


    Original     		PDF 2N6659, 2N6659-2 O-205AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 2N6659 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators


    Original     		PDF 2N6659

    FAST DMOS FET Switches

    Abstract: 2N6659
    Text: 2N6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 35V 1.8Ω 1.5A Order Number / Package TO-39 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process


    Original     		PDF 2N6659 FAST DMOS FET Switches 2N6659

    2N6659

    Abstract: 2N6660 VQ1004J VQ1004P
    Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660


    Original     		PDF 2N6659/2N6660, VQ1004J/P 2N6659 2N6660 O-205AD) P-37994--Rev. 08-Aug-94 2N6659 2N6660 VQ1004J VQ1004P

    2N6660

    Abstract: 2N6660 siliconix 2N6659 VQ1004J VQ1004P
    Text: 2N6659/2N6660, VQ1004J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ VGS = 10 V 0.8 to 2 1.1 VQ1004J/P 60 3.5 @ VGS = 10 V


    Original     		PDF 2N6659/2N6660, VQ1004J/P 2N6659 2N6660 O205AD) P-37994--Rev. 2N6660 2N6660 siliconix 2N6659 VQ1004J VQ1004P

    Untitled

    Abstract: No abstract text available
    Text: 2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 35 RDS(on) () at VGS = 10 V 1.8 Configuration Single TO-205AD (TO-39) BENEFITS • • • • • • S 1 2 Military Qualified


    Original     		PDF 2N6659, 2N6659-2 O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    2N6659

    Abstract: No abstract text available
    Text: 2N6659 60V Vdss N-Channel FET field Effect Transistor 11.69 Transistors MOSFETs . Page 1 of 1 Enter Your Part # Home Part Number: 2N6659 Online Store 2N6659 Diodes 60V Vdss N -Channel FET (field Effect Transistor) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6659 2N6659 com/2n6659

    2N6661

    Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
    Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.


    OCR Scan     		PDF 2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    2N6659

    Abstract: No abstract text available
    Text: Superte x inc. 2N6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVcss / BV dgs R dS ON (max) Id(on) (min) 35V 1,8£2 1.5A Order Number / Package TO-39 2N6659 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


    OCR Scan     		PDF 2N6659 2N6659

    Untitled

    Abstract: No abstract text available
    Text: LJi Supertex in c . 2N 6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVqss I R dS ON b v dgs (max) 35V 1.8Î2 If Standard Commercial Devices Order Number / Package TO-39 1.5A 2N6659 Advanced DMOS Technology High Reliability Devices


    OCR Scan     		PDF 2N6659 300jis

    2N6659

    Abstract: No abstract text available
    Text: fài Supertex inc. 2N6659 N-Channei Enhancement-Mode Vertical DMOS FET Ordering Information BVdss/ BV ^DS O N qgs (max) 35V 1.8Î2 If Standard Commercial Devices Order Number / Package TO-39 1.5A 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process


    OCR Scan     		PDF 2N6659 2N6659

    1004J

    Abstract: 2N6659 M 1004j
    Text: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1


    OCR Scan     		PDF 2N6659/2N6660, VQ1004J/P_ 2N6659 2N6660 VQ1004J/P P-37994-- 1004J M 1004j

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    Untitled

    Abstract: No abstract text available
    Text: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.


    OCR Scan     		PDF 2N6659 2N6660 2N6661

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) BVdgs (max) (min) TO-39 35V 1.8£2 1.5A 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process


    OCR Scan     		PDF 2N6659 300jis

    VN46AFD

    Abstract: 6178 vn0606m
    Text: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line


    OCR Scan     		PDF VNDQ06 O-205AD) O-220SD O-237 O-226AA) 14-Pin 2N6659, 2N6660 VN46AFD, VN46AFD 6178 vn0606m

    2N6659

    Abstract: No abstract text available
    Text: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N6659 VNDQ06

    T0220H

    Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
    Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046