2N660 Search Results

2N3773

Abstract: npn 855 2N6609
Contextual Info: Product Specification www.jmnic.com 2N3773 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6609 ・High DC current gain ・Low saturation voltage ・High safe operating area APPLICATIONS ・Designed for high power audio, disk head

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

MMBR930

Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA NPN 2N3773*, PNP 2N6609 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear

Contextual Info: Ëk MOS PEC COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,solenoid drivers,and dc to dc converters or inverters. NPN

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2N3773 equivalent

Abstract: 2N3773 2N6609
Contextual Info: Inchange Semiconductor Product Specification 2N3773 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head

mj15004 equivalent

Abstract: 2N6609 2N6609 equivalent mj15003 mj15004 clare mercury relay J15003 2N8809 RCA3773 RCA8638D
Contextual Info: G E SO LID 3875081 X T A I T G E SOLID □ STATE 1 DE 01E | 3 ñ 7 S D fll 17456 D DD174Sb T - $ 3 - / r ' General-Purpose Power Transistors_ 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E File Number 1061 Silicon P-N-P Epitaxial-Base * High-Power Transistors

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

2N3773 NPN Audio Power AMP Transistor

Abstract: 2n3773 power Amplifier 2N3773 2N3773 transistor 2N3773 applications 2n6609 2N3773 applications download 2N3773 equivalent 2N3773 voltage regulator
Contextual Info: 2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solenoid drivers and dc to dc converters or inverters. Features:

2N3773 NPN Audio Power AMP Transistor

Abstract: CM1630 2N3773 transistor 2N3773 voltage regulator 2n3773 power Amplifier 2N3773 2N6609
Contextual Info: Ëk MOS PEC COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,solenoid drivers,and dc to dc converters or inverters. NPN

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

Contextual Info: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 D arlington Silicon Pow er Transistors 2N 6667 2N 6668 . . designed for general-purpose amplifier and low speed switching applications. * High DC Current Gain — hpE = 3500 (Typ) @ Iq = 4 Adc

Contextual Info: File Number 1061 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E HARRIS SEMICONi SECTOR SbE D • M302271 OGMOS'îS ETT ■ HAS 7 =3 3 - 2 3 Silicon P-N-P Epitaxial-Base High-Power Transistors Rugged Devices, Broadly Applicable For Industrial and Commerical Use

2N6603

Abstract: 2n6603 transistor
Contextual Info: 2N6603 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: PACKAGE STYLE SS35 The ASI 2N6603 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications. FEATURES INCLUDE: • NF = 2.9 dB Typical @ 2 GHz • GP = 11 dB Typical @ 2 GHz • Hermetic Metal Ceramic Package

2N6609

Abstract: J1S004
Contextual Info: 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E File Number 1061 Silicon P-N-P Epitaxial-Base High-Power Transistors R ugged Devices, B roadly A p p lica b le For Industrial and C o m m erical Use _ . TE R M IN A L D E S IG N A T IO N S Features: • ■ •

MBR901

Abstract: motorola TE 901 2N6603 2n6603 transistor BR901
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6603 The RF Line N F « 2 .0 d B @ 1.0 G H z HIGH FREQUENCY TRANSISTOR NPN S IL IC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-gain, low-noise, small signal, narrow and wideband am plifiers. Ideal fo r use in m icrostrip th in and thick film applications.

to18 case

Abstract: 2N6605 Silicon Controlled Rectifier 50 amp
Contextual Info: 2N6605 2N6606 2N6607 2N6608 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6605 Series types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for control systems and sensing circuit applications.

2N6609

Abstract: 2N3773 2n3773 transistor
Contextual Info: H SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners.linear amplifiers,switching

2N3773 MOTOROLA

Abstract: MOTOROLA 2N3773 2N3773 2N3773 transistor motorola 2n6609 2N6609 2N3773 application 2N3773 NPN Audio Power AMP Transistor
Contextual Info: MOTOROLA Order this document by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

MRF902

Abstract: MRFC901 2N6603
Contextual Info: MOTOROLA SC XSTRS/R F b3b?2S4 O G ^m ? M O TO ROLA • SEMICONDUCTOR ■ ■ TECHNICAL DATA 2N6603 T he RF L ine N F = 2 . 0 d B @ 1.0 G H z H IG H F R EQ U E N C Y T R A N SIS T O R N P N S IL IC O N NPN S IL IC O N H IG H F R EQ U E N C Y T R A N SIS T O R