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    2N657 TRANSISTOR Search Results

    2N657 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N657 TRANSISTOR Price and Stock

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    2N657 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N657

    Abstract: No abstract text available
    Text: 2N657 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N657 Availability Online Store Diodes


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    2N657 2N657 O-205AD STV3208 PDF

    TRANSISTOR 2n657

    Abstract: 2N657
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE V


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    ISO/TS16949 2N657 C-120 2N657Rev190701 TRANSISTOR 2n657 2N657 PDF

    TRANSISTOR 2n657

    Abstract: 2N657
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL


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    2N657 C-120 2N657Rev190701 TRANSISTOR 2n657 2N657 PDF

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    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL


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    2N657 C-120 2N657Rev190701 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    2N657 C-120 2N657Rev190701 PDF

    TRANSISTOR 2n65s

    Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
    Text: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification


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    MIL-s-19500/74E MIL-S-19500/74D 2N497, 2N498, 2N656, 2N657 2N656 TRANSISTOR 2n65s 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22 PDF

    transistor 2N656

    Abstract: TRANSISTOR 2n657 2N656 2N657 250MA60
    Text: Datasheet 2N656 2N657 GOIKKH Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass Discrete Sem iconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 65 6 , 2N 657 types are Silicon NPN Epitaxial Planar Transistors designed


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    2N656 2N657 2N656, 2N657 2N656 250mA 200mA, transistor 2N656 TRANSISTOR 2n657 250MA60 PDF

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


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    2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN PDF

    2n498

    Abstract: 2N497 2n656 2N657 2N6571 transistor 2N656 2n657 ti
    Text: TYPES 2N497, 2N498, 2N656, 2N657 N-P-N DIFFUSED JUNCTION SILICON TRANSISTORS 20 CO H m C < < I” u — r m 4 watts at 25°C with infinite heat sink ¡¡m w 10-0hm saturation resistance (typical m ^ co Ï Ï H NJ 3 P - '1 — 65°C to + 200°C operating and storage range


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    2N497, 2N498, 2N656, 2N657 10-0hm 2n498 2N497 2n656 2N6571 transistor 2N656 2n657 ti PDF

    2N498

    Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
    Text: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,


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    0Q001BS MIL-S-19500/74E 2N497, 2N498, 2N656, 2N657 2N497S, 2N498S, 2N656S, 2N657S 2N498 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S PDF

    2N3742

    Abstract: bc140 Bc300 BC300-5 2N3678 2N4237 2N4926 2N5320 2N5321 2N5681
    Text: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. 2N3678 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^cao ^CEO ^EBO (V) (V) (V) Pd (W) Min Min Min @Tc=25°c 75 55 6 0.8 'c 'cm (A) (A) 'c 8 0 W ^CB 'ces ^CE e (V) (ma)


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    2N3678 2N3742 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC141-6 BC300 BC300-4 bc140 BC300-5 2N4237 2N4926 2N5320 2N5321 2N5681 PDF

    2n4249

    Abstract: 2N4965 se7055 2N4250 2N244 2N4248 SE706 2N2443 2n4250 TO-106 2n3742
    Text: TR A N SISTO RS—SMALL SIGNAL PNP LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VC EO PLASTIC PACKAGE TYPE VOLTS hpE MIN M IN -M A X NF hpE hFE v CEO h FE *C @ •c MIN - MAX mA mA dB @ MAX NF f dB kHz MAX f @ PACKAGE kHz MPS6523 25 150 @0.10


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    MPS6523 MPS6522 2N5138 2N4965 2N4964 2N4250 2N4248 2N5087 2N5086 EN3962 2n4249 se7055 2N244 SE706 2N2443 2n4250 TO-106 2n3742 PDF

    motorola 2N2270

    Abstract: 2N5861 MOTOROLA
    Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:


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    2N656 2N657 2N697 2N706 2N708 2N718 2N718A 2N869A 2N914 2N916 motorola 2N2270 2N5861 MOTOROLA PDF

    2n697a

    Abstract: 2N497 2N498 2N656 2N657 2N696 2N697 2N698 2N699 2N699A
    Text: Transistors Coni. Discrete Devices General Purpose Am plifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A


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    2N497 2N498 2N656 2N657 2N696 2N697 2N697A 2N698 2N613B 2N1711 2N699 2N699A PDF

    BD115

    Abstract: TO-92-4pin
    Text: CONTINENTAL DEVICE INDIA b3E D • 23033^4 OOQOOflb =13^ ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. hFE VCEO V EBO •cBO VCB (V) Min (V) Min (V) Min (MA) Max (V) 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 VCBO lc (mA)


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    2N3439 2N3742 BD115 TO-92-4pin PDF

    2N3501

    Abstract: 2N3439 2N3440 2N3500 2N3742 2N4926 BD115 BF258 BF259 BF336
    Text: CONTINENTAL DEVICE INDIA b3E D • 23033*14 OQQOOflb W ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO VCEO (V) (V) Min Min VEBO (V) Min •cBO (MA) Max VCB (V) hFE ® lc •& VCE (mA) (V) Min Max 10.0 0.75 10.000 10.0 1.00 40 2N3742 300


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    2N3439 2N3742 BF259 2N3501 2N3440 2N3500 2N4926 BD115 BF258 BF336 PDF

    BEL 100N TRANSISTOR

    Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
    Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ


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    143S3Tfl 2N2218 285max 2N2219A 2N3501TV 20min. 22min. 2N918 2N929 BEL 100N TRANSISTOR BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115 PDF

    BSY39

    Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent
    Text: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A


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    2N497 2N498 2N656 2N657 2N696 2N697 2N697A 2N698 BSY51 2N2218 BSY39 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent PDF

    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


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    MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 PDF

    2N3303

    Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
    Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­


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    MIL-19500 2N3303 MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan PDF

    2N2440

    Abstract: 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal
    Text: TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO (V) Min V C EO V E BO (V) Min (V) Min ^CBO (MA) Max V CB hFE O (V) tc •& V C E (mA) (V) Min Max V C E (Sal) & V B E (Sal) ® (V) M ax 'c (V) (mA) Min Max 3.000 10.0 0.75 15 10.000 10.0 1.00 360 40


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    2N3439 2N3742 BF259 2N3440 BFY52 2N1B40 2N1S44 2N1990 2N2218 OOD020Ã 2N2440 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal PDF

    BF336

    Abstract: 2N1613 2N1907 2n2440 BC300-5
    Text: PIN C ON FIG UR ATIO N 1. EMITTER 2. BASE 3. C O LLE CTO R DIM MIN MAX A 8,50 9,39 B 7,74 8,50 C 6,09 6,60 D 0,40 0,53 E - 0,88 F 2.41 2,66 G 4,82 5,33 H 0,71 0,86 J 0,73 1,02 K 12,7 - L 42 DEG 48 DEG ALL D IM E N S IO N S ARE IN M.M. TO-39 Metal-Can Package Transistors NPN


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    BSX63-6 BSX63-16 BSY54 CL100 CL150 BF336 2N1613 2N1907 2n2440 BC300-5 PDF

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224 PDF