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    onsemi 2N6517TA

    TRANS NPN 350V 0.5A TO92-3
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    onsemi 2N6517BU

    TRANS NPN 350V 0.5A TO92-3
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    DigiKey 2N6517BU Bulk 5,443 1
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    onsemi 2N6515

    TRANS NPN 250V 0.5A TO92
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    2N651 Datasheets (283)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N651 Central Semiconductor Germanium PNP Transistor 45 Volts, 200mW Original PDF
    2N651 Central Semiconductor Leaded Devices Scan PDF
    2N651 Germanium Power Devices Germanium PNP Small Signal Transistors Scan PDF
    2N651 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N651 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N651 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N651 Unknown Vintage Transistor Datasheets Scan PDF
    2N651 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N651 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N651 Unknown GE Transistor Specifications Scan PDF
    2N651 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N651 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N651 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N651 Semitronics Alloy-junction Germanium Transistors Scan PDF
    2N6510 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    2N6510 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6510 API Electronics Short form transistor data Short Form PDF
    2N6510 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6510 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6510 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2N651 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30ma 40v npn

    Abstract: 2N6517
    Text: DC COMPONENTS CO., LTD. R 2N6517 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 .190 4.83 .170(4.33) Pinning 1 = Emitter 2 = Base 3 = Collector


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    2N6517 100mA, 20MHz 30ma 40v npn 2N6517 PDF

    2N6520

    Abstract: 2N6520 DIODES 2N6515 2N6515RLRM 2N6516 2N6517 2N6517RLRA 2N6517RLRP 2N6519 2N6520RLRA
    Text: 2N6515, 2N6517, 2N6520 High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N6517 2N6515 2N6520 Unit Collector − Emitter Voltage


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    2N6515, 2N6517, 2N6520 2N6517 2N6515 2N6516, 2N6519, 2N6520 2N6520 DIODES 2N6515RLRM 2N6516 2N6517 2N6517RLRA 2N6517RLRP 2N6519 2N6520RLRA PDF

    2N6515

    Abstract: 2N6516 2N6517 2N6519 2N6520
    Text: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520


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    2N6515 2N6517 2N6520 2N6515, 2N6516, 2N6519, 2N6515 2N6516 2N6517 2N6519 2N6520 PDF

    2N6520 DIODES

    Abstract: 2N6515 2N6516 2N6517 2N6519 2N6520
    Text: High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517


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    2N6515 2N6517 2N6519 2N6520 2N6515, 2N6516, 2N6520 DIODES 2N6515 2N6516 2N6517 2N6519 2N6520 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    2N6516 625mW 2N6515 PDF

    2N6515

    Abstract: 2N6516 2N6517 2N6518
    Text: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    2N6515 625mW 2N6518 2N6515 2N6516 2N6517 2N6518 PDF

    2N6517

    Abstract: 2N6515 2N6516 2N6519 2N6520
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    2N6515, 2N6519 2N6516, 2N6520 2N6517 2N6515 2N6516 2N6519 2N6517 2N6520 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6516 2N6516 High Voltage Transistor • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW • Complement to 2N6519 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    2N6516 625mW 2N6519 2N6515 625mW 2N6519 2N6516BU 2N6516TA PDF

    2N 6517 TRANSISTOR

    Abstract: 6517 transistor
    Text: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector


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    2N6517 625mW 2N6520 2N6515 2N6517 O-92-3 2N6517BU 2N6517CBU 2N6517CTA 2N 6517 TRANSISTOR 6517 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    2N6515 625mW 2N6518 625mW 2N6518 2N6515BU 2N6515TA PDF

    2N6520BU

    Abstract: 2N6520 2N6520TA
    Text: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    2N6520 -350V 625mW 2N6517 2N6520 O-92-3 2N6520BU 2N6520TA PDF

    2n6520

    Abstract: No abstract text available
    Text: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520


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    2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 PDF

    2N6515

    Abstract: 2N6516 2N6519
    Text: 2N6516 2N6516 High Voltage Transistor • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW • Complement to 2N6519 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    2N6516 625mW 2N6519 2N6515 2N6516 2N6519 PDF

    bjt specifications

    Abstract: No abstract text available
    Text: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N651A Online Store 2N651A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    2N651A 2N651A com/2n651a bjt specifications PDF

    2N6516

    Abstract: 2n6520 2n6517 2N6515
    Text: MAXIMUM RATINGS Rating 2N6516 2N6515 2N6519 Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage CCBO Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO NPN 2N6517 2N6520 U nit 250 300 350 Vdc 250 300 350 Vdc 2N6515 thru 2N6517^ Vdc PNP


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    2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6516 2N6515 2N6519 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 “ C


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    2N6518 2N6520 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitler Voltage: V c e o = 2 5 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 250 250 6 500 625 150


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    2N6515 625mW 20MHz 100mA, 002S043 PDF

    2SC1730y

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2N6517 v Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CEO V EBO (V) (V) (V) Min Min Min Pd 'c (W> (A) @Tc=25°< 350 350 6 0.625 0.5 CBO 'cBO VCB *CES tpA) e (V) (pA) Max


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    2N6517 O-92-3 O-92-3 2SC13930 2SC1393R 2SC1730y PDF

    LC 300-S

    Abstract: 2N6515 2N6516
    Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: V c e o = 3 0 0 V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    2N6516 Vceo-300V 625mW 2N6515 100/iA, 100mA, 20MHz 300//s, LC 300-S 2N6516 PDF

    2N65T

    Abstract: 2N6515 CEB npn 10PA 20MHZ 2N6516 2N6517 2N6518 2N6519 2N6520
    Text: 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP ♦I COMPLEMENTARY S IL IC O N HIGH VOLTAGE TRANSISTORS JED EC TO-92 CASE D ESC RIPTIO N The CENTRAL SEMICONDUCTOR 2N6515 N P N , p le m e n ta ry s i l i c o n t r a n s i s t o r s d e s ig n e d MAXIMUM RATINGS


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    2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 2N6515 2N65T CEB npn 10PA 20MHZ PDF

    2N651

    Abstract: germanium af transistors germanium audio 2N652 2N652A t05 case Germanium power 2N651A GERMANIUM PNP LOW POWER TRANSISTORS germanium
    Text: 2N651 2N651A 2N652 2N652A t e n tra i se m ico n d u cto r Corp. C e n tra l S e m ico n d u cto r C orp. GERMANIUM PNP TRANSISTOR kS VOLTS, 200 mW JEDEC T0-5 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N651,A 2N652.A Series are Germanium Alloy PNP Milliwatt


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    2N651 2N651A 2N652 2N652A 100mA, 000tt 1000i2, germanium af transistors germanium audio 2N652A t05 case Germanium power GERMANIUM PNP LOW POWER TRANSISTORS germanium PDF

    2N6518

    Abstract: 2N6520 2N65
    Text: Transistors 2N6518 USHA INDIA LTD HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C


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    2N6518 2N6520 -100fiA, -10mA, -20mA, -50mA, -30mA, 100mA 2N6518 2N65 PDF

    2N6515

    Abstract: 2N6516
    Text: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D | 7^4142 00071^ 1 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic


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    2N6516 625mW 2N6515 T-29-21 100mA, 20MHz 2N6515 PDF

    2N6519

    Abstract: 2N6520
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6519 HIGH VOLTAGE TRANSISTOR TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current Base C urrent C ollector D issipation


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    2N6519 2N6520 -10mA, -20mA, -30mA, -50mA, -10mA -30mA 2N6519 PDF