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    2N65 POWER MOSFET Search Results

    2N65 POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2N65 POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-370

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF QW-R502-370

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF QW-R502-370

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65-C Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 2N65-C 2N65-C QW-R502-B35

    2n65 MOSFEt

    Abstract: mosfet 2n65 2N65
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-370 2n65 MOSFEt mosfet 2n65 2N65

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-370

    2n65 MOSFEt

    Abstract: 2N65 power mosfet 2N65 2N65L 2N65G-TM3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-370 2n65 MOSFEt 2N65 power mosfet 2N65 2N65L 2N65G-TM3-T

    2n65 MOSFEt

    Abstract: 2N65 mosfet 2n65 2N65G-TM3-T 2N65G-TA3-T QW-R502-370 2N65L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-370 2n65 MOSFEt 2N65 mosfet 2n65 2N65G-TM3-T 2N65G-TA3-T 2N65L

    2N65

    Abstract: 2N65 power mosfet 2n65 MOSFEt 25V 1A power MOSFET TO-220 mosfet 2n65 2N65L power mosfet 200A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-370 2N65 2N65 power mosfet 2n65 MOSFEt 25V 1A power MOSFET TO-220 mosfet 2n65 2N65L power mosfet 200A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)


    Original     		PDF O-220F O-220F1 O-262 O-251 O-220 QW-R502-370

    Untitled

    Abstract: No abstract text available
    Text: SSD02N65 2A , 650V , RDS ON 8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSD02N65 O-252 SSD02N65 O-252 24-Nov-2011

    Untitled

    Abstract: No abstract text available
    Text: 3VD238650YL 3VD238650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD238650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD238650YL 3VD238650YL O-220

    Untitled

    Abstract: No abstract text available
    Text: ACT520 Rev PrB, 11-Dec-14 Preliminary Product Information―All Information Subject to Change ActiveQRTM Quasi-Resonant PWM Controller FEATURES good margin. • DCM and Quasi-Resonant Operation ACT520 integrates comprehensive protection. In case of over temperature, over voltage, short


    Original     		PDF ACT520 11-Dec-14 ACT520 130kHz

    230V AC primary to 12V, 1A secondary transformer

    Abstract: 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26


    Original     		PDF ACT334 ACT512 ACT410 ACT411 ACT410/411 ACT413 F/400V SC053 1000pF/400V 230V AC primary to 12V, 1A secondary transformer 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65

    13003 charger

    Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26


    Original     		PDF ACT334 ACT512 ACT410 ACT411 ACT410/411 ACT413 F/400V SC053 1000pF/400V 13003 charger 230v to 5v circuit using 13003 transistor 121k 1kv capacitor

    230V ac to 5V dc usb charger circuit

    Abstract: SAMA5 RK3026 s3c2416 charger pad wide
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802C 230V ac to 5V dc usb charger circuit SAMA5 RK3026 s3c2416 charger pad wide

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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