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    2n65 MOSFEt

    Abstract: 2N65 3VD238650YL mosfet 2n65
    Text: 3VD238650YL 3VD238650YL 高压MOSFET芯片 描述 ¾ 3VD238650YL为采用硅外延工艺制造的N沟道 增强型650V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD238650YL 3VD238650YL 3VD238650YLN 650VMOS O-220 2640m 1980m X200mY80m O-251 2n65 MOSFEt 2N65 mosfet 2n65

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    Abstract: No abstract text available
    Text: 3VD238650YL 3VD238650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD238650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD238650YL 3VD238650YL O-220