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    2N595 Price and Stock

    onsemi 2N5953

    RF MOSFET JFET 15V TO92-3
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    Central Semiconductor Corp 2N5953

    JFET N-CH 30V TO92-3
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    Microchip Technology Inc 2N5958

    POWER BJT
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    Microchip Technology Inc 2N5954

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc 2N5957

    POWER BJT
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    2N595 Datasheets (240)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N595 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N595 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N595 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N595 Unknown Vintage Transistor Datasheets Scan PDF
    2N595 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N595 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N595 Unknown GE Transistor Specifications Scan PDF
    2N595 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5950 Central Semiconductor N-CHNNNEL FET Original PDF
    2N5950 Fairchild Semiconductor N-Channel RF Amplifier; Package: TO-92; No of Pins: 3; Container: Bulk Original PDF
    2N5950 Central Semiconductor RF Amplifiers Scan PDF
    2N5950 Central Semiconductor FET, N Channel, 2.5 VThreshold Scan PDF
    2N5950 Fairchild Semiconductor SFET RF,VHF, UHF, Amplitiers Scan PDF
    2N5950 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5950 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5950 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5950 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5950 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5950 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5950 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    ...

    2N595 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5952

    Abstract: 610-2N5952
    Text: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N5952 - Central Semiconductor 2N5952


    Original     		PDF 610-2N5952 2N5952 2N5952

    2n5955

    Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
    Text: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching


    Original     		PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 2N5954 2N5955 2N5956 2N6374

    2N5956

    Abstract: No abstract text available
    Text: 2N5956 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5956 O213AA) 1-Aug-02 2N5956

    Untitled

    Abstract: No abstract text available
    Text: 2N5950 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)2.5 I(DSS) Max. (A)15m


    Original     		PDF 2N5950

    2n5952

    Abstract: No abstract text available
    Text: , One. ^smi-donciucto'i TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.S.A. 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching.


    Original     		PDF 2N5952 27TYP 2n5952

    2N5744

    Abstract: TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102
    Text: Device Type 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 SDT3104 SDT3850 SDT3851 SDT3852 SDT3875 SDT3876 SDT3877 VCEO V 100 60 100 60 100 100 100 40 60 80 100 40 80 40 40 80 40 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 25/75


    Original     		PDF 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 2N5744 TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102

    2N4211

    Abstract: to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732
    Text: Device Type 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N5959 2N6046 2N6047 2N6048 SDT3201 SDT3202 SDT3203 SDT3204 SDT8002 SDT8003 SDT8012 SDT8013 SDT8015 SDT8016 SDT8045 SDT8070 SDT8071 SDT8751 SDT8753 SDT8754 SDT8755 SDT8756 SDT8757


    Original     		PDF 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N4211 to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732

    2N5954

    Abstract: No abstract text available
    Text: 2N5954 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5954 Availability Online Store


    Original     		PDF 2N5954 2N5954 STV3208 LM3909N LM3909

    Untitled

    Abstract: No abstract text available
    Text: 2N5956 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5956 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5957 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)20


    Original     		PDF 2N5957 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N5953 N-Channel RF Amplifier • • This device is designed primarily forelectronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF 2N5953 2N5953

    Untitled

    Abstract: No abstract text available
    Text: 2N595 Bidirectional Transistor 4.40 Transistors Miscellaneous Transisto. 1 of 2 Home Part Number: 2N595 Online Store 2N595 Diodes Bidirec t io nal Trans is t o r Transistors Enter code INTER3 at checkout.*


    Original     		PDF 2N595 com/2n595 2N595

    2n5951

    Abstract: transistor 2n5951 datasheet 2n5951 equivalent
    Text: 2N5951 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF 2N5951 2N5951 transistor 2n5951 datasheet 2n5951 equivalent

    MC3403P

    Abstract: 2N5953 1N5230 470k 10K180K 180k 10K22
    Text: +9 1N5230 10k 180k http://ampage.org/ ampage 9v .01 uf 10k 22 uf 6.3v 10k 1/4 MC3403P 470k 3 2 4 +9 100k 1 .01 uf 470k 2N5953 10k .047 uf 10k 10 9 .05 uf 10k 1/4 MC3403P 10k 8 .01 uf 470k 470k 12 13 10k 3m3 100k 11 1/4 MC3403P bias trim 2N5953 10k .047 uf


    Original     		PDF 1N5230 MC3403P 2N5953 MC3403P 2N5953 1N5230 470k 10K180K 180k 10K22

    Untitled

    Abstract: No abstract text available
    Text: 2N5950 N-Channel RF Amplifier • • This device is designed primarily forelectronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		PDF 2N5950 2N5950

    Untitled

    Abstract: No abstract text available
    Text: 2N5958 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)20


    Original     		PDF 2N5958 Freq20M

    2N5954

    Abstract: No abstract text available
    Text: 2N5954 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5954 O213AA) 1-Aug-02 2N5954

    2N5955

    Abstract: 2N5954 2N5956
    Text: Inchange Semiconductor Product Specification 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area ・Complement to type 2N6372/6373/6374 APPLICATIONS ・Designed for driver circuits,switching


    Original     		PDF 2N5954 2N5955 2N5956 2N6372/6373/6374 2N5954 2N5955 2N5956

    2N5005 TO-59

    Abstract: JANS2N5005 ISO 23814 to59 TO-59 23795
    Text: Microsemi PNP Transistors Part Number PNP 2N5955 2N5954 2N6111 2N6109 2N6107 2N5743 2N5744 2N5386 . TIP115 TIP116 TIP117 : 2N5286 2N5287 2N5384 2N5385 2N5408 2N5410 2N5409 2N5411 2N5003 2N5005 JAN2N5003 JAN2N5005 JANS2N5003 JANS2N5005 JANTX2N5003 JANTX2N5005


    OCR Scan     		PDF 2N5955 2N5954 2N6111 2N6109 2N6107 2N5743 2N5744 2N5386 TIP115 TIP116 2N5005 TO-59 JANS2N5005 ISO 23814 to59 TO-59 23795

    65k5

    Abstract: 2N637 1B12A 100SS 2N5955 2N6373 npn 100n 1a transistor 2N5956 100OE 2N5954
    Text: Ceiifm l sem iconductor Corp. Central Sem iconductor Corp. 1 4 5 Adam s Avenue Hauppauge, New York 11 7 8 8 DESCRIPTI0N The CENTRAL SEMICONDUCTOR 2N5954, 2N6372 series types are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed


    OCR Scan     		PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N637' 2N595^ 2N6372 2N6373 65k5 2N637 1B12A 100SS npn 100n 1a transistor 2N5956 100OE

    Untitled

    Abstract: No abstract text available
    Text: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049


    OCR Scan     		PDF 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954

    2N3055 TO-220

    Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
    Text: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N 5783 2N3054 2N5955 2N5495 2N 5494


    OCR Scan     		PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N3055 TO-220 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C BFT19B 2N5495

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan     		PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    2N5949

    Abstract: 2n5961
    Text: TYPES 2N5949 THRU 2N5953 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 3 3 8 . A P R IL 1 9 7 0 SILECTt FIELD-EFFECT TRANSISTORS^ • Narrow IDSS and VQS{off Ranges • For Low-Noise Audio-Frequency Amplifier Applications


    OCR Scan     		PDF 2N5949 2N5953 IL-STD-202C 2n5961