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    2N5942 Search Results

    2N5942 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5942 Motorola The European Selection Data Book 1976 Scan PDF
    2N5942 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5942 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5942 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5942 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5942 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5942 Unknown Transistor Replacements Scan PDF
    2N5942 Unknown Transistor Replacements Scan PDF
    2N5942 Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
    2N5942 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    2N5942 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5942 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)12 Absolute Max. Power Diss. (W)140# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5942 Freq50M

    Stackpole 57-9322-11

    Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
    Text: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB


    Original
    PDF AN593/D AN593 Stackpole 57-9322-11 EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367

    2N5942

    Abstract: transistor t04 66 transistor T04 T04 transistor S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 transistor 3055
    Text: 2N5942 SILICON NPN VHF POWER TRANSISTOR 80 W P.E.P. S IN G L E S ID E B O A R D T R A N S IS TO R mechanical data DIA 4 L absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .65 V


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    PDF 2N5942 40PEP 80PEP OT-32 OT-32 O-66P 2N5942 transistor t04 66 transistor T04 T04 transistor S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 transistor 3055

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N6367

    Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
    Text: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF


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    PDF 2N6370 MRF432 MRF433 2N5070 MRF401 145A07 MRF427 45A-08 2N5941 2N5942 2N6367 MRF420 2N5847 MRF428 MRF823

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    2N5070

    Abstract: 2N6370 MRF422 MRF816 2N5942 mrf433 MRF432 2N5941 "2-30 mhz" MRF427
    Text: Device Type ^out Output Power Watts V A GpE Power Gain dB Min. V CC Supply Voltage V olts Package 10 6.2 5.05 12.5 13.6 13.6 249-05 244-04 244.04 J 806-947 MHz, U H F FM T R A N S IS T O R S f M R F816 M RF817 M R F818 I 0.75 2.5 8.0 I J ‘ Controlled " Q " transistor. See EB-19.


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    PDF MRF816 MRF817 MRF818 EB-19. EB-26, MRF821 MRF823 2N5070 2N6370 MRF422 2N5942 mrf433 MRF432 2N5941 "2-30 mhz" MRF427

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G