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    2N5884 SEMI Search Results

    2N5884 SEMI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    2N5884 SEMI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5884

    Abstract: 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885 2N5886
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA 2N5883/D 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885

    2N5884G

    Abstract: No abstract text available
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 204AA 2N5883/D 2N5884G

    2N5886G

    Abstract: 2N5886 2N5885G IB 115 2N5883 2N5884 2N5883G 2N5884G 2N5885 2N5984
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA O-204AA 2N5886G 2N5885G IB 115 2N5883 2N5883G 2N5884G 2N5885 2N5984

    2N5886 MOTOROLA

    Abstract: 2N5984 2N5883 2N5884 2N5885 2N5886
    Text: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage —


    Original     		PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* 2N5883/D* 2N5886 MOTOROLA 2N5984 2N5883 2N5884 2N5885 2N5886

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: Inchange Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 ・High power dissipations APPLICATIONS ・They are intended for use in power linear and switching applications


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    2N5886

    Abstract: 2N5885 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5885 2N5886 2N5883 2N5884 2N5885 2N5886 2N5884

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    Untitled

    Abstract: No abstract text available
    Text: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High−Power Transistors . . . designed for general−purpose power amplifier and switching applications. http://onsemi.com • Low Collector−Emitter Saturation Voltage − 25 AMPERE COMPLEMENTARY


    Original     		PDF 2N5883, 2N5884* 2N5885, 2N5886* 2N5883 2N5885

    2N5984

    Abstract: 2N5886 2N5883 2N5884 2N5885
    Text: ON Semiconductort PNP Complementary Silicon High-Power Transistors 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — • • • VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885

    2SA1046

    Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA1046 BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement

    2N5984

    Abstract: 2N5886 2N5883 2N5884 2N5885
    Text: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. http://onsemi.com • Low Collector–Emitter Saturation Voltage – 25 AMPERE COMPLEMENTARY


    Original     		PDF 2N5883, 2N5884* 2N5885, 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885

    2N5886

    Abstract: 2N5883 2N5884 2N5885
    Text: 2N5883 2N5884 2N5885 2N5886 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883, 2N5886

    2N5883

    Abstract: 2n5885
    Text: Complementary Silicon High-Power Transistors PNP 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* r14525 2N5883/D

    TIP360

    Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436


    Original     		PDF 2N5683 2N5684 2N6377 2N6380 2N6061 2N6063 2N6378 2N6381 2N6379 2N6382 TIP360 b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    2N6886

    Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF 2N5883 2N5884* 2N5885 2N5886* 2NS884 2NS886 2N5884 2N6886 2N5984 transistor 2N5884 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


    OCR Scan     		PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A

    l5 transistor PNP

    Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


    OCR Scan     		PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A l5 transistor PNP 2N6330 PNP TRANSISTOR

    2N5886

    Abstract: 2n5884 2N5883
    Text: MOTOROLA O rder this docum ent by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low C ollector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* O-204AA 2N5886 2n5884

    2N5886 MOTOROLA

    Abstract: 2N5885 MOTOROLA 2N5984 2N5883 2N5883 MOTOROLA 2N5884 2N5885 2N5886 transistor 2N5884
    Text: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N 5883 C om plem entary Silicon H igh-P ow er Transistors 2N 5884* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N 5885 Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF 2N5883/D 2N5883 2N5885 2N5884 2N5886 2N5883/D 2N5886 MOTOROLA 2N5885 MOTOROLA 2N5984 2N5883 MOTOROLA transistor 2N5884

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage V C B S A T = 1 0 V M a X ) e l C = 1 5 A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 10 A


    OCR Scan     		PDF SATr10v 2N5883 2N5885 2N5884 N5886 2N5885 2N5886

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


    OCR Scan     		PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 5T E D • fa5b*m3 0QQQ054 434 « N E S '7 > 3 3 - o / = 3-50A V c E O S U S = 40-1O O V fT = 2-6 MHz PNP TO-3 lc (M A X ) Case 803 Case 804 Type No. NPN Compie* ment VCEO <sus> <V) (M AX) 1C (A) hFE @ IC/VCE {min-max @ A/V) VC£ (SAT)


    OCR Scan     		PDF 0QQQ054 40-1O 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716

    2n5882

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN


    OCR Scan     		PDF 2N3055 2N3442 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 2N4913 2n5882