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    2N543 Search Results

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    2N543 Price and Stock

    Vishay Siliconix 2N5433

    JFET N-CH 25V TO206AC
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    Central Semiconductor Corp 2N5431

    THROUGH-HOLE UJT
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    Central Semiconductor Corp 2N5430

    TRANS NPN 100V 7A TO66
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    Microchip Technology Inc 2N5430

    NPN TRANSISTOR
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    Vishay Siliconix 2N5432-2

    JFET N-CH 25V TO206AC
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    2N543 Datasheets (213)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N543 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N543 General Diode Transistor Selection Guide Scan PDF
    2N543 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N543 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N543 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N543 Unknown Vintage Transistor Datasheets Scan PDF
    2N543 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N543 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N543 Unknown GE Transistor Specifications Scan PDF
    2N543 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N543 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5430 Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Original PDF
    2N5430 Semelab Medium Power NPN Silicon Transistor - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Original PDF
    2N5430 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5430 API Electronics Short form transistor data Short Form PDF
    2N5430 API Electronics Short form transistor data Short Form PDF
    2N5430 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    2N5430 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5430 Diode Transistor Transistor Short Form Data - TO-3 Scan PDF
    2N5430 General Transistor NPN Power Transistors Scan PDF
    ...

    2N543 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5432

    Abstract: 2N5433 2N5434
    Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS


    Original
    PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 S-04028--Rev. 04-Jun-01 2N5433 2N5434

    2N5430X

    Abstract: No abstract text available
    Text: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N5430X O213AA) 1-Aug-02 2N5430X

    2N5432

    Abstract: 2N5434 5433 2N5433
    Text: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D


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    PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 Descri10 S-52424--Rev. 2N5434 5433 2N5433

    2N5629

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz


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    PDF 2N5430" 2N5430 2N5430X 30MHz 2N5581" 2N5581 2N5581-JQR-B 250MHz 2N5629

    Untitled

    Abstract: No abstract text available
    Text: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 JFET Sw it ch e s P/ N 2N5114 2N5115 2N5116 2N5434 J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 PN4391 PN4392 PN4393 SST111 SST112 SST113 SST108 SST109 SST110 SST174


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    PDF 2N5114 2N5115 2N5116 2N5434 PN4391 PN4392 PN4393 SST111 SST112 SST113

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


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    PDF 2N5432 2N5433 2N5434 2N3686 2N3822 2N4118A 2N4416A 2N3684 2N5197 2N6485

    Untitled

    Abstract: No abstract text available
    Text: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N5430X O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5435 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5435 time12u

    2N3492

    Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
    Text: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0


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    PDF 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879

    2N5430

    Abstract: 2N5428
    Text: SavantIC Semiconductor Product Specification 2N5428 2N5430 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage : VCE sat =1.2V(Max)@IC=7A ·Excellent safe operating areas APPLICATIONS ·Designed for switching and wide-band


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    PDF 2N5428 2N5430 2N5428 10MHz 2N5430

    Siliconix N-Channel JFETs

    Abstract: 2N5432 2N5433 2N5434
    Text: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D


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    PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 Descri10 P-37407--Rev. Siliconix N-Channel JFETs 2N5433 2N5434

    Untitled

    Abstract: No abstract text available
    Text: 2N5436 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)110 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5436 time12u

    Untitled

    Abstract: No abstract text available
    Text: 2N543 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)5.0m


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    PDF 2N543 Freq10M

    2n5434

    Abstract: 2n5432
    Text: N-Channel JFET Switch CORPORATION 2N54322N5434 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low rds(on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V


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    PDF 2N5432 2N5434 100mA 400mA -65oC 200oC -55oC 150oC 10sec) 300oC 2n5434 2n5432

    2N5430

    Abstract: IC 386
    Text: SEME 2N5430 LAB MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570)


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    PDF 2N5430 2N5430CECC 200mA 2N5430 IC 386

    2N5432

    Abstract: 2N5433 2N5434
    Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS


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    PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432 08-Apr-05 2N5433 2N5434

    Current Regulator Diodes

    Abstract: NIP1CHP
    Text: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 SST108, SST109, SST110 Single TO-52 (TO-206AC)2N5432, 2N5433, 2N5434 Single Chip


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    PDF O-226AA) OT-23 O-206AC) SST108, SST109, SST110 2N5432, 2N5433, 2N5434 Current Regulator Diodes NIP1CHP

    2N5434

    Abstract: 2N5432 2N5433 teledyne crystalonics
    Text: ULTRA LOW Ro n SWITCHING 2N5432 2N5433 2N5434 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 445, PG. 58 • L O W R d s - 5 Ohms • LOWC q d — 15pfd ELECTRICAL DATA abso lute m a x im u m PARAM ETER r a t in g s SYM BOL U N IT S


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    PDF 2N5432 2N5433 2N5434 2n5432 2n5433 2N5434 teledyne crystalonics

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N5434

    Abstract: S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434
    Text: CALOGIC CORP 4flE D • 000032b <3 ■ CGC N-Channel JFET Switch CORPORATION vJ T -3 S -Z S ’ 2N5432- 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • LOW fd*<on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage. -25V


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    PDF 4432E 000032b 2N5432-2N5434 100mA 400mA 10sec) 300ns, 4432S 00D0357 2N5434 S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434

    145S2

    Abstract: 2N5432 2N5433 2N5434 616tf
    Text: designed fo r a . S ilic o n ix Performance Curves NIP See Section 5 B EN EF IT S 'D off < 200 PA • Highspeed *d(on) < 4 ns • Low Noise Audio-Frequency Ampli­ fication en < 2 nVA/Hz at 1 kHz Typical •A B SO LU T E MAXIMUM RATIN GS (25°C) 2N5434


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    PDF 100mA -65to 2N54n-Source -10mA 145S2 2N5432I nI2N5433) 2NB434) 145S2 2N5432 2N5433 2N5434 616tf

    motorola eb20

    Abstract: silicon unijunction transistor 2n5431
    Text: motorola sc diodes/opto I sse d • t.3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW DESIGNS 1 ^3 7 ^1 2N5431 P N U nijunction T ran sisto r Silicon Annular Unijunction Transistor . i characterized prim arily for lo w interbase-voltage operation in se n sin g, pulse


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    PDF 2N5431 Vf32B1CHARAC T-37-JI motorola eb20 silicon unijunction transistor 2n5431

    Unit junction transistor UJT

    Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
    Text: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse


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    PDF b3b72SS 2N5431 2A-01 b3b72SS 10flA Unit junction transistor UJT ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc

    2N5436

    Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS
    Text: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS


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    PDF 2N5484 2N5485 2N5486 2N5434, 2N5436 360mW 2N5484 2N5485 2N5486 2N5485 MICRO ELECTRONICS 2N5434 2N5484 MICRO ELECTRONICS