Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5401 PBF Search Results

    SF Impression Pixel

    2N5401 PBF Price and Stock

    Central Semiconductor Corp 2N5401 PBFREE

    Transistor GP BJT PNP 150V 0.6A 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N5401 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5401 PBFREE Box 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.19525
    Buy Now
    Mouser Electronics 2N5401 PBFREE 19,759
    • 1 $0.24
    • 10 $0.224
    • 100 $0.209
    • 1000 $0.203
    • 10000 $0.173
    Buy Now

    Central Semiconductor Corp 2N5401 APP PBFREE

    Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5401 APP PBFREE 5,252
    • 1 $0.61
    • 10 $0.521
    • 100 $0.389
    • 1000 $0.244
    • 10000 $0.187
    Buy Now

    Central Semiconductor Corp 2N5401 APM PBFREE

    Bipolar Transistors - BJT Through-Hole-Transistor-Small Signal (<=1A)-PNP High Voltage
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5401 APM PBFREE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.206
    Get Quote

    Central Semiconductor Corp 2N5401 TRE PBFREE

    Bipolar Transistors - BJT Through-Hole-Transistor-Small Signal (<=1A)-PNP High Voltage
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5401 TRE PBFREE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.187
    Get Quote

    Central Semiconductor Corp 2N5401 TRA PBFREE

    Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5401 TRA PBFREE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.188
    Get Quote

    2N5401 PBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor equivalent book 2N5401

    Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage


    Original
    PDF 2N5400 2N5401* 2N5401 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent book 2N5401 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551

    transistor 5401

    Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


    Original
    PDF 2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application

    transistor 2n5401

    Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


    Original
    PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K transistor 2n5401 transistor 2N5401L 2n5401l 2N5401 2n5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


    Original
    PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K

    C2N5401

    Abstract: 2N5401 transistor 2N5401 of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L „ ORDERING INFORMATION Order Number


    Original
    PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-F-R 2N5401L-x-AB3-F-R 2N5401-x-T92-C-B 2N5401L-x-T92-C-B 2N5401-x-T92-C-K 2N5401L-x-T92-C-K C2N5401 2N5401 transistor 2N5401 of pnp transistor 2n5401

    2N5401L

    Abstract: of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 1 * Collector-emitter voltage: VCEO = -150V *Total Power Dissipation: PD MAX =1W * High current gain SOT-89 *Pb-free plating product number:2N5401L


    Original
    PDF 2N5401 -150V OT-89 2N5401L 2N5401-AB3-R 2N5401L-AB3-R OT-89 QW-R208-040 2N5401L of pnp transistor 2n5401

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


    Original
    PDF A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original
    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original
    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original
    PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original
    PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original
    PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original
    PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original
    PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original
    PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original
    PDF Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093

    2n3819 replacement

    Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device


    Original
    PDF MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265

    MIL-STD-750 method 1037

    Abstract: BC237 BF245 MPF4856
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other


    Original
    PDF OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856

    BC237

    Abstract: Fet BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V


    Original
    PDF VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245

    MPS751 equivalent

    Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS


    Original
    PDF MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor

    mpsa63 replace

    Abstract: BC237 MPSA63 equivalent J111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit


    Original
    PDF MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original
    PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original
    PDF BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    MPS2307

    Abstract: differential amplifier 2n5551 2N6520 MOTOROLA BF845 BF844 BF493 MPS A92 transistor 2N6515 2N6516 2N6517
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage Amplifier Transistors (TO-92 • EBC)* These high-voltage transistors are designed for driving neon bulbs and Nixie@ indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low collector current. These devices are listed in


    OCR Scan
    PDF BF844 MPSA44 BF845 MPSA45 2N6517 BF393 BCX53 BCX78 BCX59 BCX79 MPS2307 differential amplifier 2n5551 2N6520 MOTOROLA BF493 MPS A92 transistor 2N6515 2N6516