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    2N530 Search Results

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    2N530 Price and Stock

    Central Semiconductor Corp 2N5306 TIN/LEAD

    TRANS NPN DARL 25V 0.3A TO92-3
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    DigiKey 2N5306 TIN/LEAD Bulk 3,484 1
    • 1 $1.16
    • 10 $0.724
    • 100 $0.4758
    • 1000 $0.33437
    • 10000 $0.30532
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    Avnet Americas 2N5306 TIN/LEAD Box 5,000
    • 1 -
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    • 10000 $0.27647
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    Central Semiconductor Corp 2N5308 PBFREE

    TRANS NPN DARL 40V 0.3A TO92-3
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    DigiKey 2N5308 PBFREE Bulk 2,346 1
    • 1 $1.35
    • 10 $1.102
    • 100 $0.8573
    • 1000 $0.8573
    • 10000 $0.50622
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    Avnet Americas 2N5308 PBFREE Box 2,500
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    • 10000 $0.54488
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    Mouser Electronics 2N5308 PBFREE 2,430
    • 1 $1
    • 10 $0.89
    • 100 $0.774
    • 1000 $0.591
    • 10000 $0.506
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    3M Interconnect 3S502-N530-G00 PN 500

    MINI STACK CONNECTOR WIREMOUNT S
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    DigiKey 3S502-N530-G00 PN 500 Box 500 1
    • 1 $2.45
    • 10 $2.136
    • 100 $1.9089
    • 1000 $1.3635
    • 10000 $1.2726
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    3M Interconnect 3S502-N530-G00 PN

    MINI STACK CONNECTOR WIREMOUNT S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3S502-N530-G00 PN Box 100 1
    • 1 $2.52
    • 10 $2.293
    • 100 $2.02
    • 1000 $1.4645
    • 10000 $1.3635
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    onsemi 2N5307

    TRANS NPN DARL 40V 1.2A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5307 Tube
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    2N530 Datasheets (319)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N530 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N530 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N530 Unknown GE Transistor Specifications Scan PDF
    2N530 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N530 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N530 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5301 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40V 30A TO-3 Original PDF
    2N5301 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5301 On Semiconductor High-Power NPN Silicon Transistor Original PDF
    2N5301 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5301 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5301 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5301 Diode Transistor Transistor Short Form Data Scan PDF
    2N5301 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N5301 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5301 General Diode Transistor Selection Guide Scan PDF
    2N5301 General Electric High current, high power, high speed N-P-N power transistor. 40V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5301 General Transistor Power Transistor Selection Guide Scan PDF
    2N5301 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5301 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    ...

    2N530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


    Original     		PDF 2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745

    2N5302

    Abstract: 2N5302 JANTXV
    Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5302 O204AA) 31-Jul-02 2N5302 2N5302 JANTXV

    2N5302

    Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		PDF MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: 2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.


    Original     		PDF 2N5301 LF5301 PF5301 2N5301 LF5301Â PF5301Â

    Untitled

    Abstract: No abstract text available
    Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5302 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF 2N5302 2N5302/D

    2N5308

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View


    Original     		PDF 2N5308 100mA 200mAdc, 10Vdc, 10MHz) 300us, 2N5308

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		PDF MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;

    2N5308

    Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    2N5302

    Abstract: 2N5303 jantx 2n5302 adc ic 1000C
    Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage


    Original     		PDF 2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A


    Original     		PDF 2N5308

    2N4398

    Abstract: 2N5745 4399 2N4399 2n5301
    Text: Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original     		PDF 2N4398 2N4399 2N5745 2N5301/5302/5303 2N4398 2N4399 2N5745 4399 2n5301

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    2N3713

    Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
    Text: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914


    OCR Scan     		PDF 2N5067 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 2N3791 2N4399 2N4903 2N3713 2n3055 complement 2N5068 2N3055 2N3714 2N3790

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2

    2N5303

    Abstract: SPT5303 75 watt npn switching transistor
    Text: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps


    OCR Scan     		PDF 2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor

    Untitled

    Abstract: No abstract text available
    Text: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.

    2N39024

    Abstract: jantx 2n5302
    Text: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716*' 80 10 2N39024* 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60


    OCR Scan     		PDF 2N3715* 2N3716* 2N39024* 2N5302' 2N5303* 2N5685* 2N5686* 2N6249* 2N6250* 2N6251* 2N39024 jantx 2n5302

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


    OCR Scan     		PDF D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A

    2N5302

    Abstract: No abstract text available
    Text: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­


    OCR Scan     		PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5745 2N5301/2/3-2N4398/99-2N5745 GQS1334