2N4400 datasheet
Abstract: 2N4400 CBVK741B019 F63TNR MMBT4400 PN2222N
Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4400
MMBT4400
2N4400
OT-23
2N4400 datasheet
CBVK741B019
F63TNR
MMBT4400
PN2222N
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2N4400
Abstract: CBVK741B019 F63TNR MMBT4400 PN2222N
Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4400
MMBT4400
2N4400
OT-23
CBVK741B019
F63TNR
MMBT4400
PN2222N
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2N4400TA
Abstract: SOT23 MARK Y3 2N4400BU MARKING W3 SOT23 TRANSISTOR
Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4400
MMBT4400
2N4400
OT-23
2N4400H1TA
2N4400H1TF
2N4400RA
2N4400TA
2N4400TF
SOT23 MARK Y3
2N4400BU
MARKING W3 SOT23 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N4400
MMBT4400
2N4400
OT-23
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2N4400TFR
Abstract: 2N4400BU 2N4400TA 2N4400-D81Z 2N4400
Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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PDF
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2N4400
MMBT4400
2N4400
OT-23
O-92-3
2N4400BU
2N4400TA
2N4400TAR
2N4400TFR
2N4400-D81Z
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2N4400
Abstract: MMBT4400
Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4400
MMBT4400
2N4400
OT-23
MMBT4400
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Untitled
Abstract: No abstract text available
Text: EE 330 Spring 2014 Laboratory 8: Semiconductor Parameter Measurements Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to
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2N4400
Q4015L5
Q4010LS2
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Q4010LS2
Abstract: BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor Q4015L5 laser diode mosfet triggering circuit MC14007 Photo resistor bjt ic operational amplifier
Text: EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor Applications Spring 2011 Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second
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2N4400
Q4015L5
Q4010LS2
XE2410
BJT amplifiers
BJT IC Vce
red laser pointer
bipolar junction transistor
laser diode mosfet triggering circuit
MC14007
Photo resistor
bjt ic operational amplifier
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Rs 1006b
Abstract: No abstract text available
Text: TC www.vishay.com Vishay Dale Through Hole Transformers Converter FEATURES • Designed especially for low-power solid state circuits • Designed for mounting on printed circuit boards • Miniature size for minimum space • High conversion efficiency from DC input to filtered DC
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2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Rs 1006b
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Untitled
Abstract: No abstract text available
Text: TC www.vishay.com Vishay Dale Through Hole Transformers Converter FEATURES • Designed especially for low-power solid state circuits • Designed for mounting on printed circuit boards • Miniature size for minimum space • High conversion efficiency from DC input to filtered DC
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PDF
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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alternative for LM317
Abstract: TMMH-124-01-F-D-RA-ES hd-sdi pcb layout 2N4400 2N4402 49R9 GO1525 GS1524 GS1528 GS1560A
Text: GS1560A A Guide to Designing with the HD-LINX II Dual Rate Serial-to-Parallel Converter EB1560 rev 3 Reference Design 29352 - 1 February 2005 1 of 25 GS1560A Reference Design Contents 1. Overview .3
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GS1560A
EB1560
GS1560A
alternative for LM317
TMMH-124-01-F-D-RA-ES
hd-sdi pcb layout
2N4400
2N4402
49R9
GO1525
GS1524
GS1528
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DG211BDY-E3
Abstract: DG211 DG211B DG211BDJ DG211BDY DG212 DG212B DG212BDJ DG212BDY dg212bdq
Text: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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DG211B,
DG212B
DG212B
DG211,
DG212.
DG211B
11-Mar-11
DG211BDY-E3
DG211
DG211BDJ
DG211BDY
DG212
DG212BDJ
DG212BDY
dg212bdq
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DG308A
Abstract: DG308B DG308BDJ DG308BDY DG309 DG309B DG309BDJ
Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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DG308B,
DG309B
DG309B
DG308A,
DG309.
DG308B
11-Mar-11
DG308A
DG308BDJ
DG308BDY
DG309
DG309BDJ
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DG202BDJ-E3
Abstract: DG202BDY-T1-E3 3DG201B
Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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DG201B,
DG202B
DG202B
DG201A,
DG202.
DG201B
11-Mar-11
DG202BDJ-E3
DG202BDY-T1-E3
3DG201B
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V10090
Abstract: DG212BDY-T1
Text: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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PDF
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DG211B,
DG212B
DG212B
DG211,
DG212.
DG211B
11-Mar-11
V10090
DG212BDY-T1
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DG201A
Abstract: DG201B DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202B DG202BAK DG202BDJ
Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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PDF
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DG201B,
DG202B
DG202B
DG201A,
DG202.
DG201B
11-Mar-11
DG201A
DG201BAK
DG201BDJ
DG201BDJ-E3
DG202
DG202BAK
DG202BDJ
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Untitled
Abstract: No abstract text available
Text: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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Original
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PDF
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DG211B,
DG212B
DG212B
DG211,
DG212.
DG211B
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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Original
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PDF
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DG308B,
DG309B
DG309B
DG308A,
DG309.
DG308B
11-Mar-11
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DG308
Abstract: DG309B
Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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Original
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PDF
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DG308B,
DG309B
DG309B
DG308A,
DG309.
DG308B
2011/65/EU
2002/95/EC.
DG308
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Untitled
Abstract: No abstract text available
Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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Original
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PDF
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DG308B,
DG309B
DG309B
DG308A,
DG309.
DG308B
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50 • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns
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DG444,
DG445
DG211,
DG212
DG445
11-Mar-11
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DG445DY
Abstract: No abstract text available
Text: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50 • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns
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DG444,
DG445
DG211,
DG212
DG445
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
DG445DY
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2N4401 NPN Switching Transistor
Abstract: MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A
Text: This NPN Transistors Material IT In □ NPN General Purpose Amplifiers and Switches continued t-1 b-1 ÜJ a Device No. Copyrighted CBO CEO (V) (V) (V) Min Min Min TO-92 (92) 140 120 TO-92 (92) 60 Case Style a □ jr a jr cr MPSL01 2N4400 UJ CE(SAT) EBO (nA) @
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OCR Scan
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PDF
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MPSL01
2N4400
2N4401
2N4953
MPS6531
PN2222
PN2222A
2N4401 NPN Switching Transistor
MPSL01
2N4400
2N4401
2N4953
MPS6531
PN2222
PN2222A
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national PN2222A
Abstract: No abstract text available
Text: NPN Transistors NPN General Purpose Amplifiers and Switches V Device No. Case Style CBO V C EO V V Min (V) Min (V) Min Max 10 EBO MPSL01 TO-92 (92) 140 120 6 2N4400 TO-92 (92) 60 40 6 2N4401 TO-92 (92) 60 40 *CBO w (V> h FE @ 'c ft V C E Min Max (mA) 00
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OCR Scan
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PDF
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MPSL01
2N4400
2N4953
MPS6531
PN2222
PN2222A
national PN2222A
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