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    2N3799 DIP Search Results

    2N3799 DIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    P8085AH-1 Rochester Electronics LLC Microprocessor, 8-Bit, 6MHz, NMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy
    TCM3105NL Rochester Electronics LLC Modem, PDIP16, 0.300 INCH, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    P8085AH Rochester Electronics LLC Microprocessor, 8-Bit, 3MHz, NMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy
    MD8085AH/B Rochester Electronics LLC Microprocessor, 8-Bit, 3MHz, HMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy

    2N3799 DIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n222a

    Abstract: 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762
    Text: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX fT (pF) (MHz) NF Typ † (dB)


    Original     		PDF O-116 MPQ2222 2N2222 MPQ2222A 2N222A MPQ2369 2N2907 MPQ6700 2N3904 2n222a 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762

    2N3906

    Abstract: 2N2222 hfe 2N3904 NPN dip
    Text: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS


    Original     		PDF O-116 MPQ2222 MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907 MPQ2907A MPQ3467 MPQ3725 2N3906 2N2222 hfe 2N3904 NPN dip

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    MPS5771

    Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage


    Original     		PDF MPS3640 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS5771 MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic

    BC237

    Abstract: TRANSISTOR bc177b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b

    MPS6520 equivalent

    Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage


    Original     		PDF MPSW01 MPSW01A* MPSW01A 226AE) Junc218A MSC1621T1 MSC2404 MPS6520 equivalent BC237 transistor Vbe 2n2222 Characteristic curve BC107

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPS2369 equivalent

    Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage


    Original     		PDF MPS2369 MPS2369A* 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS2369 equivalent BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"

    motorola p1f

    Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363

    2N5640 equivalent

    Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		PDF 2N5640 226AA) Gate218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N5640 equivalent BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431

    PNP 2N3904

    Abstract: 2n2222 pin 2N2222 2N2222 pnp 2N3906
    Text: Quad Transistors* '^00 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVq b o bvceo BVe b o 00 (Vi (V) (nA) MIN MIN MIN MAX *CBO v CBO hpE @ iC (mA) (V) MIN VCE(SAT) ® 'C (V) (mA) MAX ^ob *T NF *OFF COMMENTS


    OCR Scan     		PDF O-116 MPQ2222 2N2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PNP 2N3904 2n2222 pin 2N2222 2N2222 pnp 2N3906

    PIN CONFIGURATION 2N2222

    Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
    Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS


    OCR Scan     		PDF O-116 2N2222 MPQ2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PIN CONFIGURATION 2N2222 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp

    2N2222 pnp

    Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip
    Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ *c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob *r (pF) (MHz)


    OCR Scan     		PDF O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 2N2222 pnp 2X PNP TRANSistors PNP 2N3904 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip

    PIN CONFIGURATION 2N2222

    Abstract: 2N2907 NPN Transistor 2N2222 PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053
    Text: Quad Transistors* '^ 0 0 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0W atts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BV c b Q b v c e o b v e b o iCBO * ? v CBO (V) (V) 00 (nA) MIN MIN MIN MAX NFe @*c <rr»A> (V) MIN VCE(SA r) 00 @*c <mA) MAX c ob *T NF


    OCR Scan     		PDF O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 PIN CONFIGURATION 2N2222 2N2907 NPN Transistor PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053

    TZ554

    Abstract: 2n2907 pnp bipolar transistor TZ552 2N4258 TZ554 transistor TZ-82 TZ-81 sprague catalog transistor 2N4258 2N2907 PNP Transistor to 92
    Text: if: iS% V? /p If f BIPOLAR TRANSISTORS • BIPOLARTRANSISTORS S P R A G U E THE M A R K O F RE LIA B ILIT Y SERIES TPP M EDIUM PO W ER DARLINGTON A R R A YS • S pr ague Series T P P devices are m e d i u m- p o we r Darlington arrays, These devices provide c o mpl ement s to Series T P Q quad transistor


    OCR Scan     		PDF TPP1000 TPP2000 TZ554 TZ581 TZ582 2n2907 pnp bipolar transistor TZ552 2N4258 TZ554 transistor TZ-82 TZ-81 sprague catalog transistor 2N4258 2N2907 PNP Transistor to 92

    2n3817

    Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier


    OCR Scan     		PDF 75T73fc 2604/JA 2605/JA 54BSC O-116) 14-Lead 100BSC 2n3817 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn