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    2N3636 TRANSISTOR Search Results

    2N3636 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N3636 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N3636

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    Onlinecomponents.com 2N3636
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    2N3636 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3636 GENERAL PURPOSE TRANSISTOR PNP SILICON 5.22 Tra. 1 of 1 Home Part Number: 2N3636 Online Store 2N3636 Diodes G ENERAL PURPO SE TRANSISTO R ( PNP SILIC O N) Transistors Enter code INTER3 at checkout.*


    Original     		PDF 2N3636 com/2n3636 2N3636

    2N3636

    Abstract: 2N3636 transistor
    Text: Data Sheet No. 2N3636 Generic Part Number: 2N3636 Type 2N3636 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: • • • • General-purpose high gain, low power amplifier transistor which operates over a wide temperature range.


    Original     		PDF 2N3636 MIL-PRF-19500/357 MIL-PRF-19500/357 2N3636 2N3636 transistor

    2N3635

    Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
    Text: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L 2N3634* 2N3635 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L

    2n3637

    Abstract: No abstract text available
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 2N3634/L 2N3635/L 2n3637

    2N3636

    Abstract: 2N3635 2N3637
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.


    Original     		PDF 2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901 2N3636

    2N3636

    Abstract: 2N3637 2N3635
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching


    Original     		PDF 2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901 2N3636

    2N3635

    Abstract: 2n3634
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 205AA 2N3634L 2N3635 2n3634

    2n3637

    Abstract: 2N3636 2N3635 2N3634
    Text: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF 2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634

    2N3634

    Abstract: 2N3635 JAN 2N3637 2N3635
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L MIL-PRF-19500/357 2N3634/L 2N3634 2N3635 JAN 2N3637 2N3635

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.


    Original     		PDF 2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA 2N3634/ L, JTX, JTXV, JANS 2N3635/ L, JTX, JTXV, JANS 2N3636/ L, JTX, JTXV, JANS 2N3637/ L, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Symbol S2N3634, L S2N3636, L Unit


    Original     		PDF 2N3634/ 2N3635/ 2N3636/ 2N3637/ MIL-PRF-19500/357 S2N3634, S2N3636, S2N3635, S2N3637,

    2C3637KV

    Abstract: chip type geometry Semicoa
    Text: Data Sheet No. CP3637 2N3636, 2N3636L 2N3637, 2N3637L Chip Type 2C3637KV Geometry 0820 Polarity PNP REF: MIL-PRF-19500L/357 27 MILS B E 27 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance


    Original     		PDF CP3637 2C3637KV 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500L/357 MIL-PRF-19500L chip type geometry Semicoa

    Untitled

    Abstract: No abstract text available
    Text: 2N3636+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3636 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: 2N3636+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3636 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: 2N3636+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3636 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿ 888888888 | M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. iiHiiftBHhr. 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 6 3 6 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3636 Type 2N3636 G eom etry TBD Polarity PNP Qual Level: Pending


    OCR Scan     		PDF 2N3636 MIL-PRF-19500/357

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


    OCR Scan     		PDF 2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052

    2N3634

    Abstract: No abstract text available
    Text: ’“ 3 .î " -ty r T f 2N3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS I _ • High Voilage— to l7 5 V . Vq ^q • Switching and Amplifier Applications MAXIMUM RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 Unit Coliector-Emltter Voltage v CEO


    OCR Scan     		PDF 2N3634 2N3637 2N3635 2N3636 2N3637 00V---------

    2N3637

    Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
    Text: Boca Semiconductor Corp. BSC http://www.bocasemi.com 2N3634 thru 2N3637 M A X I M U M R A T IN G S Symbol 2N3634 2N3635 2N3636 2N3637 C o lle cto r-E m itte r Voltage v CEO -1 4 0 -1 7 5 Vdc Collector-B ase V o ltage VCBO -1 4 0 -1 7 5 Vdc Em itter-Base V o ltage


    OCR Scan     		PDF 2n3634 2n3635 2N3636 2N3637 2N3634 2N3637 O-205AD) -100V 2N3636-37 2N3634-35 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635

    2N3634 MOTOROLA

    Abstract: 2N3636 2N3635 MOTOROLA 2N3634 2N3637
    Text: 2N3634 thru 2N3637 M AXIM U M RATINGS Symbol 2N3634 2N363S 2N3636 2N3637 U n it C o lle c to r-E m itte r V o lta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a se V olta g e v EBO Rating - 5 .0 1.0 A de


    OCR Scan     		PDF 2N3634 2N363S 2N3636 2N3637 2N3637 O-205AD) 2N3634 MOTOROLA 2N3635 MOTOROLA

    2n3634

    Abstract: 2N3634 MOTOROLA
    Text: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n


    OCR Scan     		PDF 2N3634 2N3634 2N3635 2N3636 2N3637 2N3637 O-205AD) 2N3634-35 2N3634 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan     		PDF 2N3634 2N3635 2N3636 2N3637 O-205AD)