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    TRANS PNP 140V 1A TO5
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    Microchip Technology Inc JANS2N3635L

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    Microchip Technology Inc JANSD2N3635L

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    Microchip Technology Inc JANTX2N3635L

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    2N3635L Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3635L Microsemi PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3635L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3635L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3635LJAN New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635LJANS New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635LJANTX New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635LJANTXV New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF

    2N3635L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3635L

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3635L

    2N3635

    Abstract: 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3635 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L

    2n3637

    Abstract: 2N3636 2N3635 2N3634
    Text: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF 2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634

    2N3635

    Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
    Text: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L 2N3634* 2N3635 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3635L

    2N3634

    Abstract: 2N3635 JAN 2N3637 2N3635
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L MIL-PRF-19500/357 2N3634/L 2N3634 2N3635 JAN 2N3637 2N3635

    2n3637

    Abstract: No abstract text available
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 2N3634/L 2N3635/L 2n3637

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3635L

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3635L

    2N3635

    Abstract: 2n3634
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 205AA 2N3634L 2N3635 2n3634

    2N3637UB

    Abstract: 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637UB 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB

    2N3637UB

    Abstract: JANKCA2N3637 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3637 2N3637L 2N3637 JAN
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 17 October 2010. MIL-PRF-19500/357L 17 July 2010 SUPERSEDING MIL-PRF-19500/357K 14 January 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,


    Original     		PDF MIL-PRF-19500/357L MIL-PRF-19500/357K 2N3634 2N3637, 2N3634UB 2N3637UB, 2N3634L 2N3637L, 2N3637UB JANKCA2N3637 2N3635 2N3635L 2N3637 2N3637L 2N3637 JAN

    2N3634

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 August 2013. MIL-PRF-19500/357M 6 May 2013 SUPERSEDING MIL-PRF-19500/357L 17 July 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,


    Original     		PDF MIL-PRF-19500/357M MIL-PRF-19500/357L 2N3634 2N3637, 2N3634UB 2N3637UB, 2N3634UBN 2N3637UBN, 2N3634L 2N3637L,

    2N3636 transistor

    Abstract: 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3636 transistor 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


    Original     		PDF BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36

    10VDC

    Abstract: 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR


    Original     		PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 10VDC 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637UB