2N363 Search Results

Contextual Info: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package

2N3637UB

Abstract: 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

2N2876

Abstract: 2n3375 CE 65 M 2n3632 2N4132 TO-37 SPACE POWER ELECTRONICS
Contextual Info: 8440355 SPACE SPACE POWER POWER 89C ELECTRONICS ELECTRONICS 7T RF P O W E R - 2 8 VOLT D 7~-33-o/ 00119 DE~|fi44D3SS D D D D i n • 424 "7437 • ASN <«14 .437 • 046 • 356 7T50" • 375 7455 • 1658 Rated Breakdown Voltages TYPE CASE 2N2876 2N3632

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

CE 65 M

Contextual Info: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package PACKAGE STYLE TO- 60 MINIMUM

BY1-1F

Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN
Contextual Info: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

2N3637

Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
Contextual Info: Boca Semiconductor Corp. BSC http://www.bocasemi.com 2N3634 thru 2N3637 M A X I M U M R A T IN G S Symbol 2N3634 2N3635 2N3636 2N3637 C o lle cto r-E m itte r Voltage v CEO -1 4 0 -1 7 5 Vdc Collector-B ase V o ltage VCBO -1 4 0 -1 7 5 Vdc Em itter-Base V o ltage

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

Contextual Info: 2N3636 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 175V 0.41 (0.016)

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .

Contextual Info: 2N3634CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2N3637

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .

2N3635 MOTOROLA

Abstract: 2N3635 2N3637 2N3634 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector – Emitter Voltage VCEO – 140 – 175

Contextual Info: 2 N 3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS GEOMETRY 400 • JAN. JAN-TX. JAN-TXV Available TJgTTVSTTage— to 175 • Sw itching and A m plifier A pplications MAXIMUM RATINGS S ym bol * * in g C o O c lo r E m ilia« V o i» « » wc e o vc»

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

Contextual Info: 2N3636+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3635+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3635L+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m

Contextual Info: 2N3635+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3635+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)