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    2N3473 Search Results

    2N3473 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3473 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3473 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3473 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3473 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3473 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3473 Unknown Vintage Transistor Datasheets Scan PDF
    2N3473 Unknown Vintage Transistor Datasheets Scan PDF
    2N3473 Pirgo Electronics Power Darlingtons in TO-82 / TO-63 Scan PDF
    2N3473 Silicon Transistor Industrial Grade Power Transistors Scan PDF
    2N3473 Solid Power POWER DARLINGTONS - TO-82, TO-63 Scan PDF
    2N3473 Solid Power Power Darlingtons in TO-82 / TO-63 Package Scan PDF
    2N3473 Westinghouse Silicon Power Transistors, Ultra-High Gain, 10 Amp, 150 Watts Scan PDF
    2N3473 Westinghouse Silicon Power Transistors 10 Amps, 150 Watts Scan PDF

    2N3473 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150# I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)9.0


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    2N3473 PDF

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


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    E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712 PDF

    DTS517

    Abstract: BUV28A
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


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    SDT7207 SDT7612 2N2229 2N3473 2N2233 2N3477 SDT12201 DTS517 BUV28A PDF

    2N3406

    Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391


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    HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2N3406 optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631 PDF

    2N2227

    Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32


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    2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229 PDF

    SIEMENS 5SN

    Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


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    O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 SIEMENS 5SN 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


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    2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N3477 0Q43SC TWX-510-224-6582 O-114 PDF

    2N1016

    Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
    Text: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,


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    DDGD43T 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 152-TO-82 2N1016 2N2772 2N2771 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430 PDF

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


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    2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017 PDF

    2N2228

    Abstract: No abstract text available
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo le V Watts V V A hIFE MIN MAX & le VCE A V % Sat Test Voltages Conditions V ce V be le Ib I ebo V V A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


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    2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471 PDF

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110 PDF

    westinghouse transistors

    Abstract: westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470 2N3470-73 2N2226
    Text: 13 O e : rn m x H 'ZL n ! ! i Page 1 S ilico n P ow er T ra n s is to rs U ltra-H igh G ain J E D E C T y p e s 2N2226-33 2N3470-77 Wesîinghouse -J IM vO O IM 10 Amperes, 150 Watts Collector-to-Emitter Voltage 50 to 200 Volts Ap p licatio n Therm al C h a ra cteristics


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    Tcss75' 2N2226 2N3470 2N2226-29/2N3470-73 2N2230-33/2N3474-77 24UNF-2AThreads 2N2226-33 75DIO-H_ 2N3470-77 westinghouse transistors westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470-73 PDF

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Text: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


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    2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C PDF

    2N2228

    Abstract: 2N2227 2N2229 2N3471 2N2232 2N2231 SOLID POWER CORP BVCEO 2000 PT 10000 2N2226
    Text: SOLI» POWER CORP TS »F|fi3t,S70a 0000 1 5 3 |~ ~ T'33-6I POW ER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcao BV ceo BV ebo le V Watts V V A hIFE @ MIN MAX le A VCE V Sat Voltages V ce V be V V Test Conditions Ib le Iebo A A ma 2N2226 150 50 50 15


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    2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471 SOLID POWER CORP BVCEO 2000 PT 10000 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2228

    Abstract: 2N2229 to-53 2N3472 2N2226 2N2227 2N2230 2N2231 2N2232 2N2233
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


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    2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 TWX-510-224-6582 000D431 to-53 2N3472 PDF

    2N2227

    Abstract: 2N2228 2883 to-53 TYPE 224 2N2226 2N2229 2N2230 2N2231 2N2232
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX ? 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


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    2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 TWX-510-224-6582 ioH151- 2883 to-53 TYPE 224 PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
    Text: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)


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    flES40ea rr33T77 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 NPN 200 VOLTS 20 Amps POWER TRANSISTOR 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package PDF

    2N2228

    Abstract: 2N2227
    Text: POWER DARLINGTONS TYPE NO. PT M AXIMUM RATINGS @ le 25°C BV cbo BV ceo BV ebo V V V A Watts MIN MAX B 1 le V« A V Sat Voltages VCE V be V V h« Test Conditions le Is ItBO A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10


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    2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471 PDF