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    InterFET Corporation 2N3460

    JFET JFET N-Channel -50V Low Ciss
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    Texas Instruments 2N3460

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    2N3460 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3460 Central Semiconductor N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR Original PDF
    2N3460 Central Semiconductor Leaded Devices Scan PDF
    2N3460 InterFET N-CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3460 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3460 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3460 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3460 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3460 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3460 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3460 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3460 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3460 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3460 National Semiconductor General Purpose Amplifiers Scan PDF
    2N3460 National Semiconductor N-Channel JFETs Scan PDF
    2N3460 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3460 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3460 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N3460 Siliconix FET Design Catalogue 1979 Scan PDF

    2N3460 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


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    PDF E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712

    2SK30ATMY

    Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
    Text: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687


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    PDF 2N3068A 2SK381 2SK433 KE3687 PN3687 2N3687 2SK30ATMY 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    2N3406

    Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391


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    PDF HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2N3406 optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631

    TIS34

    Abstract: MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102
    Text: N-Channel FETs RF amps BVGSS "BVOGO IVI M,n ease Type No. Styl. lOSS ImAI IGSS InAl Max Min Max Yfl I"mhol M,n @ , IMHzl Vploffl IVI Max C,a IpFI Max Gp lelll Min Cra IpFI Max @ , IMHz! NF IdBI @ Max IM~z!@ R""n Iknl Proc. No. 2N3821 TO•72 50 01 05 25 1500


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    PDF 2N3458 2N3469 2N3460 2N3684 2N3685 2N3686 2N3687 2N4338 2N4339 2N4340 TIS34 MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102

    2N3967

    Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
    Text: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821


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    PDF 2N3369 2N3370 2N34S8 N3459 2N3460 2N5362 2N5363 2N5364 2N3967 2N3821 2N3822 2N3967A 2N3968 NJ16

    2N3458

    Abstract: 2N3459 transistor 2N3458 2N3460
    Text: Datasheet Central 2N3458 2N3459 2N3460 Sem icon du ctor Corp. N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2N3458 2N3459 2N3460 2N3458, 2N3459, 2N3460 2N3458 2N3459 transistor 2N3458

    2N3458

    Abstract: 2N34B0 2N3459
    Text: TYPES 2N3458, 2N3459. 2N3460 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 2 9 7 , A P R I L 1 9 7 0 FOR IN D U S T R IA L A N D CONSUMER SM A L L -S IG N A L, LOW-NOISE APPLICATIO N S •mechanical data T H E G A TE IS IN E L E C T R IC A L C O N T A C T W IT H T H E CASE


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    PDF 2N3458, 2N3459. 2N3460 2N3458 2N34B0 2N3459

    2N5358

    Abstract: nj16 2N3369 2N3370 2N3459 2n3459 nj16 2n5105 NJ32 2N3458 2N3460
    Text: INT ER F E T CORP 2fc>E D • 4S2LSflö 0 0 0 0 1Ö 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiem Mm V Ig (nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 2N3821 2N3822 2N3967 2N3967A 2N3968 2N3968A 2N3969


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    PDF GQ00167 2N3369 2N3370 2N3458 N3459 2N3460 2N5362 2N5363 2N5364 2N5358 nj16 2N3459 2n3459 nj16 2n5105 NJ32

    2n3459

    Abstract: 2N3460
    Text: MOTOROLA SC XSTRS/R F 1SE D | ^.3^755*4 OOfltibO^ b | T - M - ZS' 2N345& 2N3460 CASE 22-03, STYLE 4 TO-18 TO-206AA MAXIMUM RATINGS Symbol Value Drain-Gate Voltage Vd g 60 Vdo Gate-Source Voltage Vg S 50 Vdc Gate Current >G 10 mA Total Device Dissipation @ Ta - 25°C


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    PDF 2N345& 2N3460 O-206AA) 2N3459 2N3460

    2n3459

    Abstract: 2N3458 2N3460
    Text: designed f o r Siliconix . Performance Curves N P See Sectiori 5 2N3459 • S m a ll-S ig n a l Low N o ise Am plifiers 2N3458 a n-channel JFETs B E N E F IT S • Operates from High Supply Voltages BVq s s > 5 0 V 2N3460 T O -1 8 See Se ctio n 7 • A B SO LU T E M A X IM U M R A T IN G S 25°C


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    PDF 2N3458 2N3459 2N3460 2n3459 2N3458 2N3460

    2N3458

    Abstract: 2N3459 2N3460 2N3368-70 2N3436-8 2N3458-60 2N4338 2N4338-41 2N5196-9 2N5545-47
    Text: a S ilic o n ix Performance Curves N P See Sectiori 5 2N3459 • Sm all-Signal Low Noise Amplifiers 2N3458 n-channel JFETs designed for . BENEFITS • Operates from High Supply Voltages BV q s s > 5 0 V 2N3460 TO-18 See Section 7 •ABSOLUTE M AXIM UM RATINGS 25°C


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    PDF 2N3458 2N3459 2N3460 2N3458 2N3459 2N3460 2N3368-70 2N3436-8 2N3458-60 2N4338 2N4338-41 2N5196-9 2N5545-47

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    Untitled

    Abstract: No abstract text available
    Text: ALL E GR O MICROSYSTEMS 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • G 5 0 4 3 3 Ô 0 Q 0 3 b l 3 1 ■ ALûR S E M I C O N D S / ICS 9 3 D 03 6 1 3 3> -T '2 -? -Z S METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


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    PDF 2N3369 2N3370 2N3458 2N3459 2N3460 2N3821 2N3822 2N3967 2N3967A 2N3968

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    2N3070

    Abstract: 2N3066 2N3967 2N3437 2N3455 2N3822 JAN 2N3436 2N3089 2N3365
    Text: ATAH LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Type Number Case Style (TO— 1 Geometr y •BVDgo oi BVgss Min (V Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) _ _ — — — — 9.5 4.5 2.2 9.5 4.5 1.0


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    PDF 2N3066 2N3067 2N3068 2N3069 2N3070 2N3071 2N3085 2N3087 2N3089 2N3089A 2N3967 2N3437 2N3455 2N3822 JAN 2N3436 2N3365

    Untitled

    Abstract: No abstract text available
    Text: SPR AGU E/SEMIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. T3 D • 0513050 G 0 D3 b l 3 2 93D 0361 3 3> S E M I C O N D S / ICS - r ~ z . ? - 7* s METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at Tfl = 25°C


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    PDF 2N3369 2N3370 2N3458 2N3459 2N3460 2N3821 2N3822 2N3967 2N3967A 2N3968

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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