2N338 Search Results

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

Contextual Info: 2N3383 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A)50m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

2N3382

Abstract: 2N3384 2N3386 VCR3P
Contextual Info: p-channel JFET B designed f or . . . • General Purpose Amplifiers S ilic o n ix B EN EFIT S: • • Switches Wide Range of Transconductance TY P E PACKAG E PRIN CIPAL D EV IC ES Single Single TO-72 Chip 2N3382, 2 N 3384, 2 N 3386, V C R 3 P 2N3382CH P-86CH P, V C R 3 P C H P

e175 Siliconix

Abstract: E175 fet MMBFJ174 2N5475 u301 siliconix InterFET u301 2N5114 motorola 55T175 2N5798 InterFET
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g.a Min (S) Max VGS(off) Max (V) IGSS Max (A) C'sa Max (F) PD Max (W) Derate at (WrC) Toper Max (DC) Package Style P-Channel JFETs, (Co nt' d) 5 10 - 15 20 2N3386 5MPJ271 TMPFJ271 E175

Contextual Info: 2N3388 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)2.5m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.5m

Contextual Info: 2N338+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)20m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)10m

Contextual Info: 2N338A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)45 I(C) Max. (A)20m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)10m

Contextual Info: » [D yj ïr ©ättä[l®( LO W P O W E R FIELD EFFECT T R A N S IS T O R S • el [ F i n n Type Number Case Style ( T O - ) Geometry BVgss Min (V) Ciss Max (pF) Vgs (off) Min Max (V) Igss or •Idgo Max (nA) Idss Min Max (mA) 2N3382 2N3384 2N3386 2N3993

2N3384

Abstract: 2N3386 2N3382 VCR3P
Contextual Info: designed fo r . Performance Curves PE See Section 5 Analog Switches Choppers Commutators A m plifiers 2N3384 BEN EFITS • Low Insertion Loss R DS on < 150 n (2N 3386) 2N3386 • ■ ■ ■ S Siliconix 2N3382 p-channel JFETs TO -72 See Section 7 ‘ AB SO LUTE M A X IM U M R A TIN G S (25°C )

Contextual Info: 2N3382 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

2N3380

Contextual Info: 20STERNAVE SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 376-8080 U.SA 2N3380 P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR •ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage (Note 1) 30 V Gate-Source Voltage (Note 1) 30V «j

Contextual Info: 2N3386 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3386 Availability Online Store

Contextual Info: 2N3389 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)195 I(C) Max. (A)7.0m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)180 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)7.0m

Contextual Info: 2N338 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)20m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)10m

2N702

Abstract: 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A
Contextual Info: J325835_4 A D V A N C E D S E M I C O N D U C T O R 82 D n n n ^ Q SILICON ADVANCED T R A F ^ IST O R S 62 SEMICONDUCTOR P d @ T c =25°C POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A

Contextual Info: 2N3386 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2N3387 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A)50m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

2N3384

Abstract: 2N5114 2N5116 J174 equivalent J176 2N3382 2N3386 2N3993 2N3993A 2N3994
Contextual Info: Case BVgss Ciss Type Style Geometry Min Max Number TO (V) (pF) 2N3382 2N3384 2N3386 2N3993 2N3993A 2N3994 2N3994A 2N5018 2N5019 2N5114 2N5115 2N5116 J174 J175 J176 J177 U304 U305 U306 UC401 UC451 UC807 72 72 72 72 72 72 72 18 18 18 18 18 92 92 92 92 18 18

2N338

Abstract: MC 150 transistor Texas Instruments 2n338 TRANSISTOR 2N338 ScansUX7 "MC 150" transistor
Contextual Info: TYPE 2N338 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. DL-S 7 3 3 5 6 , J U N E 1 9 6 0 - R E V I S E D M A R C H 1 9 7 3 FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS • Guaranteed 45-150 DC Beta • Low Collector Capacity • 20 me min Alpha-Cutofl

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.

U305

Contextual Info: LOW P O W ER FIELD EFFEC T T R A N S IS T O R S Case Style T O - Geometry Type Number BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) Igss or •Idgo Max (nA) Idss Min Max (mA) 2N3382 2N3384 2N3386 2N3993 2N3993A 72 72 72 72 72 FP5.3 FP7.3 FP5.3 FP7.3

TRANSISTOR 2N338

Abstract: 2N338
Contextual Info: TYPE 2N338 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. DL-S 7 3 3 6 6 , J U N E 1 9 6 0 - R E V I S E D M A R C H 1 9 7 3 FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS • Guaranteed 45-150 DC Beta * Low Collector Capacity • 20 me Klin Alpha-Cutoff