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    2N3019 TRANSISTOR Search Results

    2N3019 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N3019 TRANSISTOR Price and Stock

    NTE Electronics Inc 2N3019

    Transistor NPN Silicon 80V IC=1A TO-39 Case High Current High Frequency Amplifier High Gain
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N3019 599
    • 1 -
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    • 100 $1.41
    • 1000 $1.02
    • 10000 $0.917
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    Microchip Technology Inc 2N3019S

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N3019S
    • 1 $21.5
    • 10 $19.76
    • 100 $18.05
    • 1000 $17.51
    • 10000 $17.51
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    Microchip Technology Inc 2N3019

    Small-Signal Bjt To-5 Rohs Compliant: Yes |Microchip 2N3019A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N3019
    • 1 $16.06
    • 10 $14.32
    • 100 $13.09
    • 1000 $12.96
    • 10000 $12.96
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    2N3019 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3019 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3019 Availability Online Store


    Original     		2N3019 2N3019 STV3208 LM3909N LM3909 PDF

    2N3019 motorola

    Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
    Text: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage


    Original     		2N3019/D 2N3019 2N3700 2N3019/D* 2N3019 motorola 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD PDF

    2N3019

    Abstract: 2n3019 transistor
    Text: Data Sheet No. 2N3019 Generic Part Number: 2N3019 Type 2N3019 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.


    Original     		2N3019 MIL-PRF-19500/391 MIL-PRF-19500/391 2N3019 2n3019 transistor PDF

    2N3019

    Abstract: No abstract text available
    Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.


    Original     		2N3019 2N3019 PDF

    2N3019

    Abstract: No abstract text available
    Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.


    Original     		2N3019 2N3019 PDF

    2n3019 equivalent

    Abstract: 2N3019 2n3019 transistor
    Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		2N3019 2N3019 2n3019 equivalent 2n3019 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. s ct


    Original     		2N3019 2N3019 PDF

    2N3019

    Abstract: 2N301 2N3019-2N3020 2N3020 2N302
    Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation


    Original     		2N3019 2N3020 2N3019 2N3020 2N301 2N3019-2N3020 2N302 PDF

    2N3019

    Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201
    Text: NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.


    Original     		2N3019 2N3020 2N3019 2N3020 2n3019 equivalent 2N3019 and applications 2n3019 transistor 2n30201 PDF

    2N3019

    Abstract: No abstract text available
    Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		2N3019 2N3019 20MHz P008B PDF

    2n3019 equivalent

    Abstract: 2n3019 transistor test 2N3700 "nickel cap"
    Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


    Original     		2N3019 MIL-PRF-19500/391 2N3019 MIL-PRF-19500/391. T4-LDS-0185, 2n3019 equivalent 2n3019 transistor test 2N3700 "nickel cap" PDF

    2n3700

    Abstract: JTX 2N3019S 2N3700UB 2N3019 2N3700 JAN 2n3057a
    Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV 2N3019S JAN, JTX, JTXV 2N3057A JAN, JTX, JTXV 2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 TO-205AD LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS


    Original     		2N3019 2N3019S 2N3057A 2N3700 2N3700UB MIL-PRF-19500/391 2N3019; JTX 2N3019S 2N3700 JAN PDF

    pnp for 2n3019

    Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
    Text: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.


    OCR Scan     		2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 150mA VCE-10V 500mA pnp for 2n3019 2N4033 2N5020 transistor 2N4033 2N4031 BOX69477 PDF

    pnp for 2n3019

    Abstract: No abstract text available
    Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.


    OCR Scan     		2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 200OC 150mA VCE-10V pnp for 2n3019 PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC


    OCR Scan     		2N3019 2N3019 PDF

    power transistor 2n3020

    Abstract: 2N3019 and applications
    Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C


    Original     		2N3019 2N3020 2N3019, 150mA, 150mA 500mA 20MHz power transistor 2n3020 2N3019 and applications PDF

    2N4033

    Abstract: No abstract text available
    Text: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.


    OCR Scan     		2N3019 2N3019, 2NJ020 2N4033» 2N4031. 2N3020 800mW 200OC 150mA VCE-10V 2N4033 PDF

    2N3019-2N3020

    Abstract: No abstract text available
    Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS D E S C R IP T IO N The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi­ gned for high-current, high-frequency amplifier ap­


    OCR Scan     		2N3019 2N3020 2N3020 2N3019-2N3020 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax­ ial NPN transistors in Jedec TO-39 metal case, de­ signed for high-current, high-frequency amplifier


    OCR Scan     		2N3019 2N3020 2N3019 2N3020 PDF

    2N3700

    Abstract: 2N3019 2N3019 MOTOROLA motorola 2N3019 2n3020
    Text: 2N3019* 2N3020 MAXIMUM RATINGS S ym bol 2N3019 2N3020 2N3700 U n it Collector-Em itter Voltage v CEO 80 80 Vdc Collector-Base Voltage v CBO 140 140 Vdc v EBO 7.0 7.0 Vdc Rating Em itter-Base Voltage Collector C urrent — C ontinuous •c 1.0 1.0 Ade Total Device Dissipation a


    OCR Scan     		2N3019 2N3020 2N3700 2N3019* 2N3020 O-205AD) 2N3700* O-206AA) 2N3019 MOTOROLA motorola 2N3019 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data S heet No. 2N 3019 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3019 Type 2N3019 G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S REF: M IL-P R F -19500/391


    OCR Scan     		J8BBBBB88& 2N3019 MiL-PRF-19500/391 PDF

    2N3053

    Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
    Text: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous


    OCR Scan     		2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* O-205AD) 2N3053 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola PDF

    2n3700

    Abstract: 2n3019 2N3019 MOTOROLA motorola 2N3019
    Text: 2N3019* 2N3020 MAXIM UM RATINGS Sym bol 2N3019 2N3020 2N 3700 U n it C o lle ctor-E m itter V o ltage v CEO 80 80 Vdc C ollector-Base V o ltage V cB O 140 140 Vdc Em itter-Base V o ltage Vebo 7.0 7.0 Vdc 1.0 1.0 Ade Rating C o lle ctor C u rrent — C o ntinuous


    OCR Scan     		2N3019 2N3020 2N3019* 2N3020 O-205AD) 2N3700* O-206AA) 2N3700 2N3019 MOTOROLA motorola 2N3019 PDF

    ic str 6707

    Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor


    Original     		M3D111 2N3019 MAM317 SCA54 117047/00/02/pp8 ic str 6707 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317 PDF