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    2N2920 APPLICATIONS Search Results

    2N2920 APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    2N2920 APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jedec to-78 case

    Abstract: 2N2920 2N2920 applications Dual Transistors TO-78 "dual TRANSISTORs"
    Text: Central 2N2920 NPN SILICON DUAL TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 is a silicon NPN dual transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.


    Original     		PDF 2N2920 2N2920 140kHz 200Hz 22-February jedec to-78 case 2N2920 applications Dual Transistors TO-78 "dual TRANSISTORs"

    2N2920

    Abstract: No abstract text available
    Text: 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed


    Original     		PDF 2N2920 2N2920A 2N2920

    2N2483

    Abstract: 2N2920 2N930 2C2484 2N2484 2N2920 applications 2N2920A
    Text: Data Sheet No. 2C2484 Generic Packaged Part: Chip Type 2C2484 Geometry 0307 Polarity NPN 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high


    Original     		PDF 2C2484 2N2483, 2N2484, 2N2920, 2N930 2C2484 2N930, 2N2483 2N2920 2N930 2N2484 2N2920 applications 2N2920A

    2N2920

    Abstract: 2N2920 applications JANTXV 2N2920 2N2920J 2N2920JS 2N2920JV 2N2920JX
    Text: 2N2920 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2920J • JANTX level (2N2920JX)


    Original     		PDF 2N2920 MIL-PRF-19500 2N2920J) 2N2920JX) 2N2920JV) 2N2920JS) MIL-STD-750 MIL-PRF-19500/355 1x10-3 2N2920 2N2920 applications JANTXV 2N2920 2N2920J 2N2920JS 2N2920JV 2N2920JX

    anti-log

    Abstract: sensistor 2N2920 logarithmic applications sensistor Q81 2N3728 log and antilog amplifier Widlar 2N2920 Vishay Ultronix Grand Junction CO Q81 Vishay Q81
    Text: Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. One of the most predictable non-linear elements commonly available is the bipolar transistor. The relationship between collector current and emitter base voltage is precisely logarithmic from currents below one picoamp to currents above


    Original     		PDF 2N2920 2N3728 LM394 LM108 AN-30 anti-log sensistor 2N2920 logarithmic applications sensistor Q81 log and antilog amplifier Widlar Vishay Ultronix Grand Junction CO Q81 Vishay Q81

    LM709 equivalent

    Abstract: Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709
    Text: National Semiconductor Application Note 29 Robert J. Widlar September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. mance is often limited by leakages in capacitors, diodes, analog switches or printed circuit boards, rather than by the


    Original     		PDF 2N2920 2N3728 LM394 LM709 equivalent Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709

    2N2919

    Abstract: 2C2920KV CP2920 2N2920 MIL-PRF-19500L SEM 2006 G5241
    Text: Data Sheet No. CP2920 2N2919 2N2920 Chip Type 2C2920KV Geometry 0307 Polarity NPN 18 MILS 18 MILS B E E 18 MILS B REF: MIL-PRF-19500L/355 18 MILS Chip type 2C2920KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance


    Original     		PDF CP2920 2N2919 2N2920 2C2920KV MIL-PRF-19500L/355 2C2920KV MIL-PRF-19500L 2N2919, 2N2919 CP2920 2N2920 SEM 2006 G5241

    2N2920

    Abstract: 2n2917 2n2915 2N297 2N2919 2N2913 2n2914 2N2920 applications 2N2972 MOTOROLA 2n2920
    Text: DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ .*. s Beta Match as tight as 0.9 to 1


    Original     		PDF 2N2979 2N2920 2N2919-20 2N2978-79 2N2972-77 45BVEBO 2N2913 2N2972 2N2919, 2N2920, 2N2920 2n2917 2n2915 2N297 2N2919 2n2914 2N2920 applications MOTOROLA 2n2920

    2N2920

    Abstract: 355N 2N2920L 2N2920U 325 MMC pins 2N2920 2N2919 2N2919L JANHCB2N2919
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 5 May 2009. INCH-POUND MIL-PRF-19500/355N 5 February 2009 SUPERSEDING MIL-PRF-19500/355M 16 March 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/355N MIL-PRF-19500/355M 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, 2N2920U, MIL-PRF-19500. 2N2920 355N 2N2920L 2N2920U 325 MMC pins 2N2920 2N2919 2N2919L JANHCB2N2919

    2N2920U

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 12 June 2013. INCH-POUND MIL-PRF-19500/355R 12 March 2013 SUPERSEDING MIL-PRF-19500/355P 9 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/355R MIL-PRF-19500/355P 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, 2N2920U, 2N2920U

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


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    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		PDF MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    LM709 equivalent

    Abstract: lm102a LM108s 2N2920 logarithmic applications high power fet amplifier schematic LM103 zener IC OP AMP for Piezoelectric transducers LM101 disadvantages Lm709 alcohol sensor abstract
    Text: ABSTRACT A monolithic operational amplifier having input error currents in the order of 100 pA over a −55˚C to 125˚C temperature range is described. Instead of FETs, the circuit used bipolar transistors with current gains of 5000 so that offset voltage


    Original     		PDF an006875 LM709 equivalent lm102a LM108s 2N2920 logarithmic applications high power fet amplifier schematic LM103 zener IC OP AMP for Piezoelectric transducers LM101 disadvantages Lm709 alcohol sensor abstract

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N2920 \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 30 mA O m lc < MAXIMUM RATINGS 60 V P diss 500 mW @ TA = 25 °C


    OCR Scan     		PDF 2N2920 2N2920 10Hzto

    2N2920

    Abstract: No abstract text available
    Text: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 3O mA O m Ie < MAXIMUM RATINGS 6O V Pdiss SOO mW @ Ta ' (S OC Pdiss 1SOO mW @ T c ' (S OC


    OCR Scan     		PDF 2N2920

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


    OCR Scan     		PDF 2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 BDV56 BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
    Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­


    OCR Scan     		PDF LB20-2 2N2369 AVALANCHE PULSE GENERATOR 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF