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    2N2906 JANTX Price and Stock

    Microchip Technology Inc Jantx2N2906A

    Bipolar Transistors - BJT 40V 600mA 400mW PNP Small-Signal BJT THT
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    Microchip Technology Inc JANTX2N2906AUB

    Bipolar Transistors - BJT 40V 600mA 400mW PNP 3 Pin CER Small-Signal BJT
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    Microchip Technology Inc JANTX2N2906AUBC/TR

    Bipolar Transistors - BJT 40V 600mA 400mW PNP 3 Pin CER Small-Signal BJT TR
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    Microchip Technology Inc JANTXV2N2906AUBC/TR

    Bipolar Transistors - BJT 40V 600mA 400mW PNP 3 Pin CER Small-Signal BJT TR
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    Microchip Technology Inc JANTX2N2906AL

    Bipolar Transistors - BJT 40V 600mA 400mW PNPLong-Lead Small-Signal BJT THT
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    2N2906 JANTX Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-18 amps pnp transistor

    Abstract: BC107 BC108
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029


    OCR Scan     		T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor BC107 BC108 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products


    Original     		2N2906 O206AA) 16-Jul-02 PDF

    2N2906 JANTX

    Abstract: 2N2906
    Text: 2N2906 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products


    Original     		2N2906 O206AA) 2-Aug-02 2N2906 JANTX 2N2906 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A All Semelab hermetically sealed products


    Original     		2N2906 O206AA) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906+JANTX Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N2906 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2906+JANTXV Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N2906 Freq200M PDF

    2N4027

    Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P


    OCR Scan     		2N2906 T0206AA 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N4027 TO-18 amps pnp transistor transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 PDF

    cv8616

    Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200


    OCR Scan     		N3963 N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 BCY79 BCY71 cv8616 BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV PDF

    BC107-108-109

    Abstract: CV8616 2N2369At Transistor BC177 2N2222A motorola 2N2905 MOTOROLA 2N5416 MOTOROLA 2N2907 JANTX 2N3440 MOTOROLA 2N2907 JANTX motorola
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		MIL-19500 i2945 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N3501 2N1893 BC107-108-109 CV8616 2N2369At Transistor BC177 2N2222A motorola 2N2905 MOTOROLA 2N5416 MOTOROLA 2N2907 JANTX 2N3440 MOTOROLA 2N2907 JANTX motorola PDF

    2N3440 MOTOROLA

    Abstract: CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Choppers Devices are listed in decreasing V (b r )E B O - Offset Voltage Package TO-46 Device 2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 V(BR)EBO Min 40 40 30 30 25 25 15 V(BR)ECO 35 35 20 20 20 20 10 Min


    OCR Scan     		2N2946 2N2946A 2N5230 2N5231 2N2945A 2N2945 2N5229 2N1613 2N2369 2N3440 2N3440 MOTOROLA CV8616 2N2222A motorola 2N2905 MOTOROLA BC107-108-109 2n3439 motorola 2N3501 MOTOROLA 2N2222A JANTX bc107108109 motorola transistor 2N2907A PDF

    BCY72 MOTOROLA

    Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200


    OCR Scan     		N3963 N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 BCY79 BCY71 BCY72 MOTOROLA 2N4405 BC178 BC179 transistor 2N4033 2N2906 2N2906A PDF

    2N2222A motorola

    Abstract: 2N2484 motorola CV8616 2n2484 complementary 2N4033 2N3019 motorola transistor motorola 2n3053 2N2219 MOTOROLA BC107 2N3700 2N2219 transistor
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.


    OCR Scan     		N2896 2N3700# 2N2484# 2N930 BCY59 BC107 2N2222A 2N5229 2N1613 2N2369 2N2222A motorola 2N2484 motorola CV8616 2n2484 complementary 2N4033 2N3019 motorola transistor motorola 2n3053 2N2219 MOTOROLA BC107 2N3700 2N2219 transistor PDF

    2N2222A JANTX

    Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA


    OCR Scan     		MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA PDF

    2N5416 MOTOROLA

    Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
    Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.


    OCR Scan     		BUY49S BF257 BSW68A 2N3114 2N3501* BSW67A N5682 2N5229 2N1613 2N2369 2N5416 MOTOROLA CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N4033 2N5231 2N4236 MOTOROLA PDF

    2N2369At

    Abstract: 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		MIL-19500 i2945 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N3501 2N1893 2N2369At 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS PDF

    motorola 2N2270

    Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
    Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.


    OCR Scan     		h3b7E54 007b70E 2N2896 2N3700# 2N2895 2N956 2N2897 2N718 2N2221A# 2N2222AI motorola 2N2270 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427 PDF

    BSW68A

    Abstract: 2N4033 2N5680 transistor 2N4033 2N3114 2N3501 2N4237 2N4239 2N5681 BF257
    Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.


    OCR Scan     		BUY49S BF257 BSW68A 2N3114 2N3501* BSW67A N5682 BSV16 BC161 2N2904A# 2N4033 2N5680 transistor 2N4033 2N3501 2N4237 2N4239 2N5681 PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF

    High-Voltage Amplifiers

    Abstract: 2N4033 2N4209 transistor 2N4033 2N2369 2N3227 2N3506 2N3724 BCY71 motorola 2N3735
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 High-Voltage Amplifiers 2N4033 2N4209 transistor 2N4033 2N2369 2N3227 2N3506 2N3724 BCY71 motorola 2N3735 PDF

    MM4003

    Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 MM4003 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725 PDF

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


    Original     		O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF