2N3053 NPN transistor
Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM
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250mW
80min
30min
40min
4/30m
10/10m
360mW
2N3053 NPN transistor
2n2917 dual transistor
2N2906AQF
2N2907AQF
2N2917
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AC188
Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A
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BFT92
2SB733
AC188
BC369
2SA1273
2SA1309
2SA608
2SA966
2SB774
BC328-25
2N2907A-PL
2SA1797Q
2SA1538S
2SA1443-NEC
DTA143ES
mj15004-mot
BCX52GEGSMD
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2N2270
Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
Text: NPN SWITCHING TABLE 3 NPN SILICON PLANAR M E D IU M AND HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2N3262
BCY79
2N929
2N930
2N2219A
2N2905A
2N2222A
2N2907A
ZT181
ZT182
2N2270
2N2102
2N4036
BCY65E
BCY77
BFX84
BFX85
ZT189
ZT86
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2N2905A complement
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Text: 2N3053 CÛ U > > Type 60 VCEO Max Ic hFE Max VcE sat at V ic mA IB mA Min Max 50 250 V mA 40 700 1 -4 150 15 Min fT at at ic ic mA MHz mA 150 100 60 150 50 I s = ! M Hn1 NPN GENERAL PURPOSE - Continued 1000 Package Comple ment T039 2N4037 2N696 60 40 500 1 -5
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
2N2905A complement
2N1131
2N1132
2N4037
BC177
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NPN C460
Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25
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2N3724A
2N3725A
2N3244
BF257
BS9300
2N2219A
2N2221
2N2222
NPN C460
2N2907 equivalent
c496
2N2906 equivalent
2N2905 equivalent
2n2484 complementary
2N2907 t018
C735
CV7496
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Transistor BC177
Abstract: BCY42 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59
Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037
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N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
Transistor BC177
BCY42
2N1131
2N1132
2N4037
BC177
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2N2907A fairchild
Abstract: 36065E 2N4258 fairchild semiconductors 2N5023 BSX29 2N2894 2N3209 T018 3605SC
Text: Fairchild Sem iconductors Sem iconductors S ilicon Sm all S ig n a l T ran sisto rs P N P H igh Speed Saturated Sw itching Transistors Metal Can T018, T039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
2N2907A fairchild
36065E
2N4258
fairchild semiconductors
T018
3605SC
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BCY65E
Abstract: ZT189 ZT211 ZT86 ZT88 ZT89 ZT90 ZT91 ZT92 ZT93
Text: NOISE N SILICON PLANAR LOW NOISE TRANSISTORS lown in this table are characterised for low noise, low level amplification and litable for audio pre-amplifiers as well as universal applications. ; are I sted in orderof decreasing Breakdown Voltage I, Pov /er Dissipation P tot r etc.
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BCY79
2N929
2N930
2N2219A
2N2905A
2N2222A
2N2907A
ZT181
ZT182
BCY58
BCY65E
ZT189
ZT211
ZT86
ZT88
ZT89
ZT90
ZT91
ZT92
ZT93
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2n2218a
Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
Text: NPN SWITCHING TA B LE 3 NPN SILICO N PLAN AR M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2N3262
BCY79
BFX86
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2222A
2N2102
2N4036
BCY65E
BCY77
BFX84
BFX85
ZT189
ZT86
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2N2405
Abstract: 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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BCY79
2N929
2N930
2N2219A
2N2905A
2N2222A
2N2907A
ZT181
ZT182
BCY58
2N2405
2N1893
2N2102
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
ZT92
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C495 transistor
Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250
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BF594
BF594,
BF194
BF595
BF195
BF597
BF197
2N4996
BS9300
2N2219A
C495 transistor
BF194
BF194 equivalent
BF195
bf357
BF597
BF195 equivalent
BF594
transistor c495
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BF178
Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95J0
2N3570
2N3571
2N3572
2N918
2N4252
2N4253
BFQ36
BF257/8/9
BFQ37
BF178
bf179
BFT79
BF177
2N2219 2N2905
bf338
BC325
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C495 transistor
Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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BCW35GP.
BS9300
2N2219A
2N2221
2N2222
2N2221A
fT018
C495 transistor
c638 transistor
EQUIVALENT TRANSISTOR bc108
C756 TRANSISTOR
PNP Transistor 2N2222 equivalent
C735 transistor
c637 transistor
transistor c495
TRANSISTOR bc107 current gain
c372 transistor
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BSY52
Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BSY51
BSY52
BC107
BCY56
2N1131
2N1132
2N4037
BC177
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2N3726
Abstract: 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721
Text: RAYTHEON/ SEMICONDUCTOR 7597360 RA YTH EO N . T4 I [f| 7 5 ^ 7 3 ^ 0 O D O S S D S 0 | ~ SEM ICO ND UCTOR 94D Product Specifications Small Signal Transistors 05505 D 7*- * 7 ~f 7 G B PNP Raytheon Medium Current General Purpose Amplifiers and Switches Description
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7ST73b0
500mA.
2N2907A/JAN
2N2906A/JAN
2N2905A/JAN
2N2904A/JAN
65-1006B
100BSC
54BSC
O-116)
2N3726
45-BSC
JAN2N2905A
2n2907a raytheon
2N2004
2N2907AJ
2N3503
RAYTHEON
SP2907AQD
2N721
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2N2894 FAIRCHILD SEMICONDUCTOR
Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
2N2894 FAIRCHILD SEMICONDUCTOR
BC253C
2N4258
BC171
2N2907A FAIRCHILD SEMICONDUCTOR
bc252b
BC107 itt
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BCY78
Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696
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N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
BCY78
2N1131
2N1132
2N4037
BC177
BCY79
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V405A
Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
V405A
BFR38
2N2907 plastic
BFR99
BFY18
BFY64
sgs 2n2907a
transistor 2N4033
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2N6728
Abstract: BC546 BC556 2N4036 national NSDU05
Text: bflÇ ]> • b S 0 1 1 3 G D G B T S lb 4 3 b « N S C S General Purpose Amplifiers and Switches continued; _ _ N A T L SEni COND ( D I S C R E T E (Volts) Min 65 60 PNP NPN - f i Devices V C E 0 ( m i s I) fT @»c hF E @ lc mA NF (dB) Max Min Max
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BC546
BC846
T0-92
O-236*
2N4036
BC556
BC856
TN4036
2N6728
2N4036 national
NSDU05
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N3053
Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037
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N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
2N1131
2N1132
2N4037
BC177
BCY79
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C495 transistor
Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra
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BCW35GP.
BS9300
2N2219A
2N2221
2N2222
2N2221A
fT018
C495 transistor
C735 transistor
c638 transistor
C756 TRANSISTOR
transistor c495
C644 transistor
PNP Transistor 2N2222 equivalent
transistor c735
c637 transistor
transistor c633
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2N2222A zetex
Abstract: No abstract text available
Text: SbE D • TÎ7DS7Ô O O G b ^ ? 105 « Z E T B ZETEX SEMICONDUCTORS NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2N3262
N2905A
2N2906A
2N2907A
BFX86
ZT181
ZT182
2N3512
BCY58
BCY78
2N2222A zetex
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2N2102
Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2N3262
T0-39
T0-18
BCY79
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2102
2N4036
BCY65E
BFX84
BFX85
ZT86
ZT88
ZT89
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bc140
Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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BCY79
BFX86
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2222A
2N2907A
bc140
2N2405
2N1893
2N2102
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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