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    2N2857 MOTOROLA Search Results

    2N2857 MOTOROLA Result Highlights (2)

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    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
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    2N2857 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N28

    Abstract: 2N2857 2N3839
    Text: 2N3839 I The RF NPN SILICON RF SMALL-SIGNAL . . . designed lator, primarily and mixer for use in high-gain, applications. I Line TRANSISTORS low-noise amplifier, Can also be used in UHF oscil- converter applications. 0.050 Total Device Dissipation @ TA = 25°C


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    2N3839 DS5387 2N28 2N2857 2N3839 PDF

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


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    2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola PDF

    BF480

    Abstract: R950 Avantek S 2n3570 2SC988
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619


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    2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597 2N6598 BF480 R950 Avantek S 2n3570 2SC988 PDF

    MMBR2857

    Abstract: sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857
    Text: 12E D I b3fc,7aS4 DQÔ7EÛ1 3 | MOTOROLA SC MOTOROLA XSTRS/R F - - SEM ICONDUCTOR TECHNICAL DATA MMBR2857 The RF Line Ole Source Same as 2N2857 IMPN Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator


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    MMBR2857 2N2857 MMBR2857 sot23 transistor marking 12E MMBR2857 MOTOROLA BR2857 PDF

    2N2857 MOTOROLA

    Abstract: DGMOS 2n2857
    Text: MOT O ROL A SC XSTRS/R F 4bE D t.3b?2S4 oamoeM MOTOROLA ? mOTb " F 3 I - I S SEMICONDUCTOR TECHNICAL DATA 2N2857 The RF Line NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed prim arily for use in high-gain, low-noise am plifier, oscil­


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    2N2857 2N2857 MOTOROLA DGMOS 2n2857 PDF

    MMBR2857

    Abstract: MMBR2857L 2857L
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MMBR2857L The RF Line Die S ource S am e as 2N2857 N PN Silicon High Frequency Tran sistor . . . des ig n e d p rim a rily for use in h ig h -g ain , lo w -n o ise a m p lifie r, oscillator and m ix e r ap p licatio n s. P ackaged for thick or th in -film circuits using surface


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    MMBR2857L 2N2857 MMBR2857 MMBR2857L 2857L PDF

    MMBR2857L

    Abstract: Mmbr2857
    Text: M O T OR O L A SC XSTRS/R F 4bE D b3fc.72S4_ÜG^i42S2 T • MOTb MOTOROLA i-i^ -r -3 TECHNICAL DATA MMBR2857L The RF Line Oie Source Same as 2N2857 N P N S ilic o n H ig h Frequency T ra n sisto r . . . d e sig n e d prim arily for u se in high-gain, lo w -n o ise am plifier, oscillator


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    i42S2 MMBR2857L 2N2857 OT-23 O-236AA/AB) MMBR2857L Mmbr2857 PDF

    2N3866 MOTOROLA

    Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 2N5829 2N5031 MRF904 MRF571 RF572/M RF2369 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957 PDF

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors PDF

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866 PDF

    2N3866 MOTOROLA

    Abstract: 2N2857 MOTOROLA MOTOROLA 2N5179 2N2857 MRF2369 2N5179 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA
    Text: RF SMALL-SIGNAL TRANSISTORS continued UHF and Microwave Oscillators The transistors listed below are for U H F and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power.


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    2N5179 2N2857 2N3839 MM8009 2N5108 2N3866 2N5829 2N5031 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 MRF2369 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA PDF

    2N2857

    Abstract: J6041
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN SIL IC O N RF S M A LL -SIG N A L T R A N SIST O R S NPN SIL IC O N RF SM A L L -SIG N A L T R A N SIS T O R S . . . designed p rim arily for use in high-gain, low-noise am plifier, oscil­ lator, and m ixer applications. Can also be used in U H F converter


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    2N2857 2N2857 J6041 PDF

    2N3866 MOTOROLA s parameters

    Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD PDF

    2N2857 DIE

    Abstract: 2N2857 MOTOROLA 2N3839 SILICON DICE motorola
    Text: MOTOROLA SC {DIODES/OPTO} 6367255 MOTOROLA 34 SC M T | L ,3 t ,7 5 S S DIODES/OPTO 34-C 0 0 3 f lC m 38049 |~" D T'3i-ir SILICON RF TR A N SISTO R DICE (continued) 2C2857 DIE NO. — NPN LINE SOURCE — RF502.153 This die provides performance equal to or better than that of


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    RF502 2C2857 2N2857 2N3839 15Vdc 2N2857 DIE 2N2857 MOTOROLA 2N3839 SILICON DICE motorola PDF

    2n5835

    Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160 PDF

    MRF544

    Abstract: MRF542 MRF543 2n5179 MRF545 317D-01 2N5829 MRF502 2N2857 2N4957
    Text: RF SMALL-SIGNAL TRANSISTORS continued TO-72 METAL CAN Gain - BW Gain Noise Figure Maximum Ratings v (BR)CEO mA f MHz V mA ^T mW GHz mA 2N5031 2N4958* 2N4959* 2N5829* 1.0 1.0 1.0 1.2 5.0 2.0 2.0 2.0 2.5 3.3 3.8 2.5 450 450 450 450 1.0 2.0 2.0 2.0 14 16 15


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    2N5031 2N4958* 2N4959* 2N5829* 2N4957* MRF501 MRF502 BFX89 BFY90 2N5179 MRF544 MRF542 MRF543 MRF545 317D-01 2N5829 2N2857 2N4957 PDF

    2n4427 MOTOROLA

    Abstract: MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 2N3866, 2N3866A 2N5160, MM4018, 2N3948, 2N4427, MRF207 2N5109, 2n4427 MOTOROLA MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583 PDF

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A PDF

    MOTOROLA SELECTION mrf237

    Abstract: Motorola transistors MRF630 MRF515 2N3948 MRF604 MRF630 MOTOROLA 2N3553 motorola mrf237 MOTOROLA Transistor MRF630 motorola MRF515
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 MRF237* MRF207 MRF227* MRF525* 2N3866 2N5160f MRF313 05A-1 MOTOROLA SELECTION mrf237 Motorola transistors MRF630 MRF515 2N3948 MRF604 MRF630 MOTOROLA 2N3553 motorola mrf237 MOTOROLA Transistor MRF630 motorola MRF515 PDF

    MOTOROLA TRANSISTOR MRF239

    Abstract: MRF239 MRF212 MOTOROLA SELECTION mrf237 MRF238 mrf237 MOTOROLA mrf239 MOTOROLA MRF260 145A-09 MRF237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    17A-01 05A-01 45A-09 MRF264 T0-220AB MRF1946/A# 2N6084 MRF224 MRF4070* MOTOROLA TRANSISTOR MRF239 MRF239 MRF212 MOTOROLA SELECTION mrf237 MRF238 mrf237 MOTOROLA mrf239 MOTOROLA MRF260 145A-09 MRF237 PDF

    MRF536

    Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan
    17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 MRF536 MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237 PDF

    case 317-01

    Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 PDF

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan
    17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943 PDF