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    2N2857 COMMON BASE AMPLIFIER Search Results

    2N2857 COMMON BASE AMPLIFIER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    2N2857 COMMON BASE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


    Original     		PDF 2N2857 MIL-PRF-19500/343 2N2857 2N2857. T4-LDS-0223,

    2N2857

    Abstract: 2N2857 JANTXV
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


    Original     		PDF 2N2857 MIL-PRF-19500/343 2N2857. T4-LDS-0223, 2N2857 JANTXV

    2N2857 JANTX

    Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


    Original     		PDF 2N2857 MIL-PRF-19500/343 2N2857. T4-LDS-0223, 2N2857 JANTX 2n2857 common base amplifier 2N2857 JANTXV TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF

    2n2857 UHF transistor common base amplifier

    Abstract: 2n2857 2n2857 common base amplifier 2n2857 data sheet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •


    Original     		PDF 2N2857 To-72 2N2857 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier 2n2857 data sheet

    2n2857 UHF transistor common base amplifier

    Abstract: 2N2857
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •


    Original     		PDF 2N2857 To-72 2N2857 2n2857 UHF transistor common base amplifier

    2n2857

    Abstract: 2n2857 UHF transistor common base amplifier
    Text: 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC • Maximum Unilateral Gain = 13 dB typ @ 500 MHz 2 1 3 4 1. Emitter 2. Base 3. Collector 4. Case


    Original     		PDF 2N2857 To-72 2n2857 2n2857 UHF transistor common base amplifier

    Untitled

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


    Original     		PDF 2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1,

    2N2857UB

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


    Original     		PDF 2N2857UB MIL-PRF-19500/343 2N2857. T4-LDS-0223-1,

    2n2857 UHF transistor common base amplifier

    Abstract: 2n2857 common base amplifier 2N2857 transistor TO-72
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •


    Original     		PDF 2N2857 To-72 MSC1066 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier 2N2857 transistor TO-72

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 BFR91
    Text: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF5943, 300MHz TempeMRF545 MRF544 s-parameter 2N4427 S-parameter 2N5179 BFR91

    MRF951

    Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607
    Text: MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 30mA • Cost Effective Macro X Package


    Original     		PDF MRF951 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF951 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607

    mrf3866

    Abstract: s-parameter 2N4427
    Text: MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF3866, MRF544 mrf3866 s-parameter 2N4427

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 RF 2N3866 s-parameter 2N3866 s-parameter bfr91 s-parameter transistor 2N4427 2n3866 mrf559 v 2N4427 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


    Original     		PDF MRF3866, BFR90 MRF545 MRF544 MSC1312 MRF559 MRF904 s-parameter 2N4427 S-parameter 2N5179 RF 2N3866 s-parameter 2N3866 s-parameter bfr91 s-parameter transistor 2N4427 2n3866 mrf559 v 2N4427 2N5179

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


    Original     		PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904

    MRF5812

    Abstract: No abstract text available
    Text: MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units


    Original     		PDF MRF5812, MRF545 MRF544 MRF5812

    transistor bfr96

    Abstract: transistor BFR91 msc1302 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


    Original     		PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MSC1302 transistor bfr96 transistor BFR91 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:


    Original     		PDF 2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ

    MRF581

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF5812, BFR90 MRF545 MRF544 MRF581/MRF581A MRF581

    MRF3866R1

    Abstract: 2n2857 common base amplifier
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


    Original     		PDF MRF3866, MRF545 MRF544 MRF3866 MRF559 MRF904 MRF3866R1 2n2857 common base amplifier

    s-parameter 2N4427

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


    Original     		PDF MRF4427, MRF3866 200MHz BFR90 MRF545 MRF544 MRF5812, MRF4427 MRF555 s-parameter 2N4427

    MRF5812

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF5812, MRF5812

    Untitled

    Abstract: No abstract text available
    Text: MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF5812, MRF5812G,

    2N2857

    Abstract: 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier
    Text: File No. 61 R F Pow e r T r a n s is t o r s Solid State Division 2N2857 RCA-2N2857 i s a d o u b l e - d i f f u s e d e p ita x ia l planar t r a n s i s t o r of the s i l ic o n n-p-n type. I t is e x tre m ely u s e f u l in 1 o w - n o i s e - amp 1 i f i e r , o s c i l l a t o r , a n d c o n ­


    OCR Scan     		PDF 2N2857 HCA-2N2857 2N2857 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


    OCR Scan     		PDF