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    2N2736 Search Results

    2N2736 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2736 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N2736 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2736 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2736 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2736 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2736 Unknown Vintage Transistor Datasheets Scan PDF
    2N2736 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2736 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2736 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2736 Unknown GE Transistor Specifications Scan PDF
    2N2736 Semitron Germanium Power Transistors Scan PDF
    2N2736 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N2736 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2736 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)65 Absolute Max. Power Diss. (W)66 Maximum Operating Temp (øC)125# I(CBO) Max. (A)5.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N2736 time18u

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


    Original
    PDF BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 2N2648 BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601

    2N4048

    Abstract: pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053
    Text: 59 GERMANIUM POWER TRANSISTORS C U R R E f JT G A IN SA T U R A T IO M V O LT A G ES @> @ TYPE N U M BER C A SE T YPE VCBO V V CEO V C ER V V EBO V 30 AM P GE 3MAN UM P VIP V C ES V M IN . hl:E | M AX. V CE V I 'c A V C E s V BE(s> V I V ’c A 'b I A Observe (—) Negative Polarity


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    PDF 2N2152 2N2153 2N2154 2N2156 2N2157 2N2158 2N1520 2N1521 2N1157 2N1157A 2N4048 pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    DTG-600

    Abstract: DTG-2400 2N2733 DTG-1010 2N4278 DTG-110B 2N4277 2N4280 dtg 600 DTG-601
    Text: GERMANIUM POWER TRANSISTORS Type Number CURRENT GAIN Case Type Vc.„ V V ceo MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 45 30 60 45 30 2N4276 2N4277 2N4278 2N4279 2N4280 TO-3 TO-3 TO-3 TO-3 TO-3 30 30 45 45 60 20 20 30 30 45 20 20 25 25 30 30 30 45 45 60


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    PDF SDT1909 MT-23 SDT1910 SDT2008 MT-22 SDT2009 SDT2010 DTG-600 DTG-2400 2N2733 DTG-1010 2N4278 DTG-110B 2N4277 2N4280 dtg 600 DTG-601

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a

    DTG-600

    Abstract: DTG-2400 DTG-110B DTG110B DTG-1010 sc103 DTG110 2N4276 FS20R06XE3 DTG2400
    Text: 6ERMANIUM POWER DEVICES b3E ]> • 3T47375 DGOOSfl1! Gb7 ■ G P D GERMANIUM POWER TRANSISTORS I Type N um ber C U R R E N T G A IN tlF£ Vck @ 1c M ax. V A Case Type VCBO V ycio y MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 4i' 30 60 4Î 30 2N4276 2N4277


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    PDF 3T47375 SDT1909 MT-23 SDT1910 SDT2008 MT-22 SDT2009 SDT2010 DTG-600 DTG-2400 DTG-110B DTG110B DTG-1010 sc103 DTG110 2N4276 FS20R06XE3 DTG2400

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N236A

    Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
    Text: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N236A 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214

    2N1227

    Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
    Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1227 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N236A 2N420