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    2N2646 CIRCUIT Search Results

    2N2646 CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    2N2646 CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n2646

    Abstract: 2N2646 to18
    Text: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2646 Availability Online Store


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    2N2646 2N2646 Specifications973) STV3208 2N2646 to18 PDF

    transistor motorola 2n2646

    Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
    Text: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


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    b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646 PDF

    transistor 2N2646

    Abstract: 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT
    Text: 596 Z8Z. SbE D philips international • 7110a2b 0042bl0 b31 ■ PHIN J - 2 Z-Crt Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of Issue December 1990 Silicon unijunction transistor QUICK REFERENCE DATA PARAMETER SYMBOL CONDITIONS


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    711002b 004Eb 2N2646 -TO-18 VKBi-10V 7110a2b 004Sbl3 T-25-Q9 transistor 2N2646 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT PDF

    GES2646

    Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
    Text: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors


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    2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of PDF

    2n2646

    Abstract: 2n2647
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


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    2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647 PDF

    2N2646

    Abstract: SCR 2N2646 2N2646 CIRCUIT 2n2647 High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol
    Text: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


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    2N2646 2N2647 2N2646 2N2647 SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol PDF

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
    Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)


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    2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647 PDF

    2N2646

    Abstract: transistor 2N2646 2n2646 pin 2N2646 PHILIPS MC8444 Unijunction transistor 2N2646 of 2N2646 pin configuration EB20
    Text: PHILIPS INTERNATIONAL Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor QUICK R E F E R E N C E DATA PARAM ETER SYM BO L ~v EB2 emitter-base 2 voltage 'EM emitter current Pm


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    2N2646 -TO-18 MB81S5 MSB031 MCB443 MC8444 /vV450 MSA119 transistor 2N2646 2n2646 pin 2N2646 PHILIPS Unijunction transistor 2N2646 of 2N2646 pin configuration EB20 PDF

    GES2646

    Abstract: 2N2646 Vp GES2647 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646
    Text: G E SOLID STATE 3875081 Ôï G E SOLID STATE »T|3fl7SDÔl 01E GD1 7 tm 17999 fl D T -“ 3 7 - a , / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92


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    2N2646, 2N2647, GES2646, GES2647 -4257I GES2646 2N2646 Vp 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646 PDF

    2N2646 motorola

    Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
    Text: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


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    b3b755S 2N2646 2N2647 2N2646 motorola 2N2647 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264 PDF

    2N2646

    Abstract: 2N2646 transistor TO-220 2N2646
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


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    2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646 PDF

    2N2646

    Abstract: 2N2646-47 scr firing D5J45 2N2646.47 2ampe
    Text: Silicon D5J45 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ratings: 2 5 °C Power Dissipation (Note 1) RMS Emitter Current Peak Emitter Current (Note 2) Emitter Reverse Voltage


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    D5J45 2N2646-47 35Volts D5J45 2N2646 scr firing 2N2646.47 2ampe PDF

    2N2646

    Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
    Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


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    2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr" PDF

    2n2646 pin

    Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
    Text: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS


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    0042bl0 2N2646 -TO-18 MCB443 2N2646 711Dfl2b 0042L 2n2646 pin 2N2646 pin configuration 2N2646 -pin configuration silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS PDF

    2N2646-47

    Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
    Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘


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    2N2646-47 30Volts 35Volts 10/xF D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN PDF

    2N2646

    Abstract: D5J43
    Text: Silicon D5J43 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b s o lu te m axim um ra tin g s : 2 5 ° C (Note 1) 300 m W 50 mA 2 Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘ -6 5 ° C to + 1 5 0 ‘


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    D5J43 2N2646-47 30Volts D5J43 2N2646 PDF

    Unijunction transistor 2N2646 of

    Abstract: 2N2646P
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER


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    2N2646 C8444 Unijunction transistor 2N2646 of 2N2646P PDF

    transistor 2N2646

    Abstract: 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor
    Text: N AMER P H I L I P S / D I S C R E T E bTE D bbSBTBl DDEfllOM 77b P h ilip s S em ico n d u cto rs 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E D A T A SYM BOL _V eB2


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    2N2646 -TO-18 002fllD7 transistor 2N2646 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor PDF

    UJT 2N2646

    Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
    Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


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    2N489-494â 2N2646-47â 26B-2N2647-HI UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891 PDF

    CD4541BE

    Abstract: Pulse Transformer VAC VAC PULSE TRANSFORMER 2N6507 2n2646 tl783c S4010L 2n2646 equivalent LM741N 240 AC to 12V 12V AC transformer
    Text: Y YY D3 J1 12 VAC 12 VAC B 12 VAC J3 12 VAC C HV ON J4 +3 KV 10K 1/2W B+ R26 R1 S4010L Q1 12 VAC A J2 R3 5.6V D1 33 2W 22 2W S4010L R24 R25 Q2 33 2W 22 2W 12 VAC D 500K 75W 10K 1/2W D17 Z RFI FILTER R23 R28 .1 400V 100 RFI SNUBBER TL783C 680 2W J6 Vi n 470 uF 60V


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    S4010L TL783C 2N6507 TIP29A ECG291 CD4541BE CD4541BE Pulse Transformer VAC VAC PULSE TRANSFORMER 2N6507 2n2646 tl783c S4010L 2n2646 equivalent LM741N 240 AC to 12V 12V AC transformer PDF

    2N2646 Vp

    Abstract: 2n2646 IEB20
    Text: REVISIONS multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT O F SPC TECHNOLOGY. DCP # REV 1262 DOC. NO. SPC— F005 DESCRIPTION DRAWN DATE RELEASED HO 9 5 /0 2


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    O--18, 2N2646 35C0693 2N2646 Vp 2n2646 IEB20 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage


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    2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500, PDF

    SK9124

    Abstract: 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
    Text: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 2N491A Online Store 2N491A Diodes NPN EPITAXIAL PO W ER TRANSISTO R IN TO 6 6 HERM ETIC Transistors P AC KAG E


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    com/2n491a 2N491A 2N491A SK9124 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871 PDF

    2N2646 Vp

    Abstract: IEB20 2N2646 2N2646 transistor 35C0693 RB2100
    Text: REVISIONS ALL L m ulticom p R IG H T S W HETHER RESERVED. IN W H O LE W IT H O U T T H E TECHNO LO G Y. NO OR EXPRESS IN P O R T IO N PART W R ITTE N O F T H IS CAN BE CONSENT OF DOC. NO. SPC— F005 * Effective: 7 / 8 / 0 2 * DCP No: 1398 P U B L IC A T IO N ,


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    2N2646 35C0693 2N2646 Vp IEB20 2N2646 2N2646 transistor RB2100 PDF