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    2N2585 Search Results

    2N2585 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N2585 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2585 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2585 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2585 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2585 Unknown GE Transistor Specifications Scan PDF
    2N2585 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2585 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    2N2585 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2585 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)150# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10


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    PDF 2N2585 Freq30k

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


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    PDF BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 2N2648 BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601

    LT049

    Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .


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    PDF BUT12A 2N6581 2N6584 2N6587 2N6590 BUW26 TIPL765A 2N6752 SDT13204 LT049 LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03

    2N4211

    Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
    Text: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110


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    PDF 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228

    2N2580

    Abstract: 2N2581 2N2582 2N2583 2N3079 2N3080 2N5466 2N5840 2N6306 2N6307
    Text: HIGH VOLTAGE TRANSISTOR^ PT @ @ @ Ic Ic VCEO Ic VcEO ICEO Vox @ 25*C MAX 125°C SUS MA V MA V V MA Watts A 5 150 10 325 100 400 2N2580 100 400 5 10 2N2585KÏ 15Ô 5 10 150 325 100 400 2N2581 5 10 150 325 100 500 2N2582 5 10 325 100 500 2N2583 150 5 10 2N3079


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    PDF 2N2580 2N2585KÏ 2N2581 2N2582 2N2583 2N3079 2N3080 N5838 2N5840 2N5466 2N6306 2N6307

    2N2580

    Abstract: 2N3079 to-53
    Text: HIGH VOLTAGE TRANSISTOR^ PT @ @ @ Ic Ic VCEO Ic VcEO ICEO Vox @ 25*C MAX 125°C SUS MA V MA V V MA Watts A 5 150 10 325 100 400 2N2580 100 400 5 10 2N2585KÏ 15Ô 5 10 150 325 100 400 2N2581 5 10 150 325 100 500 2N2582 5 10 325 100 500 2N2583 150 5 10 2N3079


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    PDF 2N2580 2N2585KÏ 2N2581 2N2582 2N2583 2N3079 2N3080 N5838 2N5840 2N5466 to-53

    RT3062

    Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685

    2N5576

    Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
    Text: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


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    PDF diff15 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N5576 MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A

    MP2143

    Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    transistor TF78

    Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202