PN 2n2222A
Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
|
OCR Scan
|
2N2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907,
2N2907A,
PN2907Â
PN 2n2222A
3n2222
2K2222
3N2222A
2N2222-PN2222
ST 2n2222
2K222
pn 2N22
VBB-23
|
PDF
|
2N2907
Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
Text: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.
|
OCR Scan
|
2N2907,
2N2907A,
PN2907,
PN2907A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907A
2N2907
PN2907
pn2222 2n2222
2N2222
2N2222A
PN2222
pn2907 2n2907
|
PDF
|
2N2222 hfe
Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
Text: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87
|
OCR Scan
|
BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2906
2N2222
2N2907
ZT180
2N2222 hfe
2N2222 chip
ztx313
BCY71
2N2904
2N2906
|
PDF
|
2N2368
Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4
|
OCR Scan
|
BFY51
2N2218
N2904
2N2219
2N2905
2N2220
2N2221
N2906
2N2222
2N2907
2N2368
2N2475
2n2369
2N2476
N2904
|
PDF
|
2n2222a SOT23
Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1
|
OCR Scan
|
T-33-Ã
2N1132
2N1483/
2N1484^
2N1485
2N1486
2N1613
2N1711
2N2060
2N2192
2n2222a SOT23
2N3904DCSM
2n1485
2N2453
2N3680
2n2222 sot23
BFX81
2N1483
2N1484
|
PDF
|
2C415
Abstract: 2C425 2N2222ACSM4 2C746 2N1721 1N5617CSMD 2N2222A LCC1 2N2219AQF
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 1N914CSM 1N4001CSM 1N4001QCSM 1N4003CSM4 1N4003QCSM 1N4148CSM 1N4151CSM 1N4572ACSMD 1N5617CSMD 1N5711CSM 2C415 2C425 2C444 2C746 2N1132 2N1208 2N1209 2N1483A 2N1484A 2N1485A 2N1486A
|
OCR Scan
|
1N914CSM
1N4001CSM
1N4001QCSM
1N4003CSM4
1N4003QCSM
1N4148CSM
1N4151CSM
1N4572ACSMD
1N5617CSMD
1N5711CSM
2C415
2C425
2N2222ACSM4
2C746
2N1721
2N2222A LCC1
2N2219AQF
|
PDF
|
N2905
Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
Text: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and
|
OCR Scan
|
ZT189
T0-18
2N4036
2N2102
2N2904A
4BCY79
BCY59
N2904
2N2218
N2905
N2907
N2905A
2N2219 transistor
2N2102
2N2218A
2N2219A
2N2221A
2N2906A
|
PDF
|
N706A
Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696
|
OCR Scan
|
N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
N706A
2N2368
2N2475
2N1131
2N1132
2N4037
BC177
|
PDF
|
2n2222
Abstract: BFY51 2N2905 2N708 ZT187 2N2218 2N2219 2N2221 2N2904 2N2906
Text: NPN SWITCHING Type V C EO Continued M ax V CE sat| at Max 'c fT Min at h FE at Switching times (Max. at PacksQ S Min M ax •c ton m A MHz m A ns •c mA mA 0.35 150 15 40 150 50 V •b V mA BFY51 30 1000 2N2218 30 800 0.4 150 15 40 2N2219 30 800 0.4 150
|
OCR Scan
|
BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2906
2N2222
2N2907
ZT180
2N2905
2N708
ZT187
2N2904
2N2906
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at
|
OCR Scan
|
7057fl
BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2369A
2N2368
2N2369
|
PDF
|
NPN C460
Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25
|
OCR Scan
|
2N3724A
2N3725A
2N3244
BF257
BS9300
2N2219A
2N2221
2N2222
NPN C460
2N2907 equivalent
c496
2N2906 equivalent
2N2905 equivalent
2n2484 complementary
2N2907 t018
C735
CV7496
|
PDF
|
N2219
Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039
|
OCR Scan
|
133ia?
00Q13
2N1937
2N1991
2N2060
5/10m
2N2102
35min
10/10m
2N2192
N2219
2N2453
2N2243
Hirel
2N2192A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SbE D ^ 7 0 5 7 0 Q Q O b ' m Tfifl • Z E T B T -JT I-Q l ■ PNP SWITCHING ZETEX SEMICONDUCTORS TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices show n in this table are characterised for medium and high speed switching applications
|
OCR Scan
|
BSV17
ZT189
2N4036
BFX30
2N2222
2N2218
2N2907
ZT181
ZT182
BCY78
|
PDF
|
NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
|
OCR Scan
|
BS9365
2N4036
2N4037
BS3365
2N4030
2N4031
NPN pnp MATCHED PAIRS 2n2905A 2N2219A
BFR39
BFR80
BFR40
BS9300
BFR81
BC326
BFR79
TIS90
BFR62
|
PDF
|
|
N2907
Abstract: bc140 BC161 2N2102 2N4036 BC141 BCY65E BCY77 ZT189 ZT211
Text: PNP GENERAL PURPOSE TA BLE2 PNP SILICON PLANAR G EN ER A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
|
OCR Scan
|
BCY79
BCY59
N2904
2N2218
N2905
2N2219
2N2906
2N2221
N2907
2N2222
bc140
BC161
2N2102
2N4036
BC141
BCY65E
BCY77
ZT189
ZT211
|
PDF
|
2N2219 2N2905
Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
Text: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.
|
OCR Scan
|
2N3724A
2N3725A
2N3244
BF257
BFQ36
BF257/8/9
BFQ37
2N2218
2N2904
2N2218A
2N2219 2N2905
BF177
BF178
BF338
bf179
BC312
BF337
BFT37
BF336
bc143
|
PDF
|
Transistor BC177
Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696
|
OCR Scan
|
N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
Transistor BC177
2N2475
audio BC108
2N1131
2N1132
2N4037
BC177
|
PDF
|
transistor t05
Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A
|
OCR Scan
|
5flMfl35g
DETRdf\J515TQR
2N327A
N328A
2N329A
2N330
2N726
2N863
2N939
2N945
transistor t05
N2907
N2907A
2N3040
t05 transistor
2N2927A
2N2280
2N3064
2N1921
2N3058
|
PDF
|
2N2210
Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
Text: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A
|
OCR Scan
|
D00aM33
40min
75min
20min
l/10m
25min
5/10m
2N2210
2N2223
200H
250M
T018
T072
2N1724A
706A
|
PDF
|
C495 transistor
Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
|
OCR Scan
|
BCW35GP.
BS9300
2N2219A
2N2221
2N2222
2N2221A
fT018
C495 transistor
c638 transistor
EQUIVALENT TRANSISTOR bc108
C756 TRANSISTOR
PNP Transistor 2N2222 equivalent
C735 transistor
c637 transistor
transistor c495
TRANSISTOR bc107 current gain
c372 transistor
|
PDF
|
BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
|
OCR Scan
|
2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BSY51
BSY52
BC107
BCY56
2N1131
2N1132
2N4037
BC177
|
PDF
|
N2907
Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
|
OCR Scan
|
BCY70
2N2605
2N2604
ZT181
ZT182
BCY78
BCY58
BCY72
ZT180
ZT187
N2907
ZT152
N2904
2N2102
2N4036
BC141
BC161
BCY65E
BCY77
ZT189
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M ED IU M A N D HIGH SPEED SW ITCHING T R A N SIST O R S The d e vice s s h o w n in this table are characterised for medium and high speed sw itchin g applications in C om m ercial, Industrial and M ilitary equipm ents.
|
OCR Scan
|
2N3262
2N2102
BFX85
BFX84
BCY65E
2N1613
2N2270
BSY95A
2N708
2N2938
|
PDF
|
BF225
Abstract: 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254
Text: Silicon Transistors Case Type No. c^ o T' Maximum Ratings at 25°C amb. C haracteristics SPEC IAL FEATURES 11 = 1“ o CJ ,-V CB V V Ce V V EB V •c A Ptot W !c mA hpE h A - 1 r- *- •, Min. Max. Min. ■c mA M c/s ^CE SAT
|
OCR Scan
|
2N915
2N916
2N918
2N2865
2S102
2S103
2S104
2S731
2N2540
2N2883
BF225
2n3984
2N2539
TI-407
2N4255
N4254
TI407
TIS37
2N2538
2N4254
|
PDF
|