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    2N119 Price and Stock

    SICK AG WTT2SL-2N1192

    Laser Sensor, 800Mm, Npn, 30V Rohs Compliant: Yes |Sick WTT2SL-2N1192
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    Newark WTT2SL-2N1192 Bulk 1
    • 1 $486.93
    • 10 $379.61
    • 100 $315.76
    • 1000 $315.76
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    SMC Corporation of America KQ2N11-99

    One-Touch Fitting, 3/8 in. Tube Size, KQ2 Series | SMC Corporation KQ2N11-99
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    RS KQ2N11-99 Bulk 3 1
    • 1 $2
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    Texas Instruments 2N119

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    Bristol Electronics 2N119 12 1
    • 1 $22.8
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    Quest Components 2N119 9
    • 1 $24.7
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    Motorola Semiconductor Products 2N1192

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    Bristol Electronics 2N1192 5
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    Quest Components 2N1192 46
    • 1 $6
    • 10 $4.4
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    2N1192 8
    • 1 $6
    • 10 $4.4
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    NJS 2N1195

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N1195 4 1
    • 1 $5.6
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    2N119 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N119 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N119 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N119 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N119 Unknown GE Transistor Specifications Scan PDF
    2N119 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N119 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N119 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N119 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N119 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N119 Unknown Vintage Transistor Datasheets Scan PDF
    2N1190 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1190 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1190 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1190 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1190 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1190 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1190 Unknown Vintage Transistor Datasheets Scan PDF
    2N1190 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N1190 Semitron Alloy Junction Germanium Transistor Scan PDF

    2N119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1194

    Abstract: No abstract text available
    Text: 2N1194 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.125 h(FE) Max. Current gain.600


    Original     		PDF 2N1194

    Untitled

    Abstract: No abstract text available
    Text: 2N1197 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1197

    Untitled

    Abstract: No abstract text available
    Text: 2N1191 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80


    Original     		PDF 2N1191

    Untitled

    Abstract: No abstract text available
    Text: 2N1199 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N1199

    2N117

    Abstract: 2N118 2N119
    Text: I MI L- S-19500/2B AMENOMENT 1 23 February 1981 ● MILITARY SEMICONDUCTOR OEVICE, TYPES SPECIFICATION TRANSISTOR, 2N118, 2N117, NPN, ANO SILICON, LOW POMER 2N119 This amendment forms a part of Military Specification MI L-s-19500/z B, dated 14 June 1968, and is approved for use by all Departments


    Original     		PDF S-19500/2B 2N118, 2N117, 2N119 L-s-19500/z -078B-1) 2N117 2N118 2N119

    2N117

    Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
    Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory


    Original     		PDF MIL-S-19500/2B MfL-S-19500/2A MfL-S-19500/35B 2N117. 2N118, 2N119 2NI17 2N117 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532

    Untitled

    Abstract: No abstract text available
    Text: 2N119 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N119

    Untitled

    Abstract: No abstract text available
    Text: 2N1198 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)75m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.17 h(FE) Max. Current gain.90


    Original     		PDF 2N1198

    Untitled

    Abstract: No abstract text available
    Text: 2N1196 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1196

    Untitled

    Abstract: No abstract text available
    Text: 2N1192 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.40 h(FE) Max. Current gain.135


    Original     		PDF 2N1192

    Untitled

    Abstract: No abstract text available
    Text: 2N1193 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.70 h(FE) Max. Current gain.300


    Original     		PDF 2N1193

    Untitled

    Abstract: No abstract text available
    Text: 2N1190 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.100 h(FE) Max. Current gain.


    Original     		PDF 2N1190

    uPD70F3548

    Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
    Text: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559


    Original     		PDF V850E2/Fx4 32-bit V850E2/FG4 PD70F3548 PD70F3549 PD70F3550 V850E2/FJ4 PD70F3551 PD70F3552 PD70F3553 uPD70F3548 uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4

    2SC 9012

    Abstract: 2N119 9012 transistor ScansUX7
    Text: TYPE 2N119 N-P-N G R O W N -J U N C T IO N SILICON TR A N S IS TO R BU LL ET IN NO. DL-S 58899, M AR C H 1958 3 6 to 8 6 beta spread SpecificaHy designed for high gain a t high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N119 1750C 2SC 9012 9012 transistor ScansUX7

    2N1195

    Abstract: Germanium power
    Text: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:


    OCR Scan     		PDF 2N1195 MIL-S-19500/71D, 2N1195 Germanium power

    2N119

    Abstract: No abstract text available
    Text: TYPE 2N119 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58899, M A R C H 1958 36 to 8 6 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.


    OCR Scan     		PDF 2N119

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    M-8124

    Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 M-8124 usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1

    SFT307

    Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302

    2n1620

    Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E


    OCR Scan     		PDF

    2SC114 transistor

    Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF