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Catalog Datasheet	MFG & Type	PDF	Document Tags
2n06l07 Abstract: SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07 Text: SPP80N06S2L-07 SPB80N06S2L-07 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 7 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated	Original	PDF	SPP80N06S2L-07 SPB80N06S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4285 2N06L07 P-TO263-3-2 2n06l07 SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07
2n06l07 Abstract: 2N06L SP0002-18867 2N-0 IPB80N06S2L-07 IPP80N06S2L-07 ANPS071E PG-TO263-3-2 Text: IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB80N06S2L-07 IPP80N06S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-18867 2N06L07 2n06l07 2N06L SP0002-18867 2N-0 IPB80N06S2L-07 IPP80N06S2L-07 ANPS071E PG-TO263-3-2
2n06l07 Abstract: Q67040-S4288 Text: SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID Logic Level m 7 80 P- TO263 -3-2 175°C operating temperature V A P- TO220 -3-1 Avalanche rated dv/dt rated Type SPP80N06S2L-07	Original	PDF	SPP80N06S2L-07 SPB80N06S2L-07 Q67040-S4285 Q67040-S4288 2N06L07 BSPP80N06S2L-07 BSPB80N06S2L-07, Q67040-S4288
2n06l07 Abstract: Q67040-S4288 Q67040-S4285 ANPS071E SPB80N06S2L-07 SPP80N06S2L-07 WA200 Text: SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level • 175°C operating temperature V 7 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated • dv/dt rated	Original	PDF	SPP80N06S2L-07 SPB80N06S2L-07 Q67040-S4285 2N06L07 Q67040-S4288 BSPP80N06S2L-07 BSPB80N06S2L-07, 2n06l07 Q67040-S4288 Q67040-S4285 ANPS071E SPB80N06S2L-07 SPP80N06S2L-07 WA200
2n06l07 Abstract: 2N06L 2N06 ANPS071E bspp G1412 SPB80N06S2L-07 SPP80N06S2L-07 Q67040-S4285 H160B Text: SPP80N06S2L-07 SPB80N06S2L-07 OptiMOSâ Power-Transistor Product Summary A Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level 7 mΩ 80 P- TO263 -3-2 • 175°C operating temperature V A P- TO220 -3-1 • Avalanche rated • dv/dt rated	Original	PDF	SPP80N06S2L-07 SPB80N06S2L-07 Q67040-S4285 Q67040-S4288 2N06L07 BSPP80N06S2L-07 BSPB80N06S2L-07, 2n06l07 2N06L 2N06 ANPS071E bspp G1412 SPB80N06S2L-07 SPP80N06S2L-07 Q67040-S4285 H160B
2n06l07 Abstract: SPB80N06S2L-07 SPP80N06S2L-07 2N06L Text: Preliminary data SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS • Enhancement mode Drain-source on-state resistance RDS on • Avalanche rated Continuous drain current ID 55	Original	PDF	SPP80N06S2L-07 SPB80N06S2L-07 SPP80N06S2L-07 P-TO220-3-1 Q67040-S4285 2N06L07 SPB80N06S2L-07 P-TO263-3-2 Q67040-S4288 2n06l07 2N06L