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    2N 303 TRANSISTOR Search Results

    2N 303 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N 303 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    future scope of jfet

    Abstract: 2N5638 2N5638 equivalent 2N5639 2N5369RLRA 2N5638RLRA
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high–speed switching applications. http://onsemi.com • Low Drain–Source “ON” Resistance:


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    PDF 2N5638, 2N5639 2N5638 2N5638 2N5638) r14525 2N5638/D future scope of jfet 2N5638 equivalent 2N5639 2N5369RLRA 2N5638RLRA

    2n5458

    Abstract: 2N5457 application note 2N5457 2N5638 2N5639
    Text: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com


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    PDF 2N5457, 2N5458 2N5457 2N5458 r14525 2N5457/D 2N5457 application note 2N5638 2N5639

    NPN transistor 2n 3904

    Abstract: tr 2n3904 2N3904 pin diagram 2N3904 2N3904 transistor data sheet free download data sheet transistor 2n3904 2N3904 equivalent tr 3904 h 2n3904 2n3904 specification
    Text: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage


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    PDF 2N3903, 2N3904 2N3903 2N3903/D NPN transistor 2n 3904 tr 2n3904 2N3904 pin diagram 2N3904 2N3904 transistor data sheet free download data sheet transistor 2n3904 2N3904 equivalent tr 3904 h 2n3904 2n3904 specification

    2N3904

    Abstract: equivalent al 2n3904 2n3904 application 2N3904RLRA 2N3904 equivalent 2N 3904 transistor 2N3903 2N3903RLRM 2N3904RL1 2N3904RLRE
    Text: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO


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    PDF 2N3903, 2N3904 2N3903 r14525 2N3903/D 2N3904 equivalent al 2n3904 2n3904 application 2N3904RLRA 2N3904 equivalent 2N 3904 transistor 2N3903RLRM 2N3904RL1 2N3904RLRE

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    BD 139 140

    Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
    Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)


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    PDF O-I26 CB-16 /TO-202 CB-203 CB-244 BD 139 140 bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117

    2N 3055

    Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
    Text: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )


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    PDF TPu75 2N5294 2N6111 2N6109 2N 3055 2N3055 ESM434 BDX 71 ESM435 ESM142 84132N

    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


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    PDF TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135

    ci 4030

    Abstract: 2N4033 4030 IC 4033 4031 2N4031 2N4032 4033 LC150
    Text: 2N 4030 2N 4031 2N 4032 SILICON PLANAR PNP 21,4033 G E N E R A L PURPO SE A M P L IF IE R S A N D SW ITCHES The 2N 4030, 2N 4031, 2N 4032 and 2N 4033 are silicon planar epitaxial PN P transistors in Jedec TO -39 metal case primarily intended for large signal, low noise industrial applications.


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    PDF 2N4031 2N40315V -50mA ci 4030 2N4033 4030 IC 4033 4031 2N4032 4033 LC150

    BO241C

    Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
    Text: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t


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    PDF TPu75 O-126 BD138 BO241C BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135

    bc 301 transistor

    Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP


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    PDF BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56

    2N6678

    Abstract: transformerless inverter 2N6676 2N6677 DO820
    Text: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators


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    PDF 2N6676, 2N6677 2N6678 2N6677, 2N6678 transformerless inverter 2N6676 DO820

    emetteur

    Abstract: 2N3441 BDY72 3441 V560 2n 3441
    Text: *2 I\I 3441 *B D Y 7 2 NPN òlLICON TRANSISTORS, HOMOBASES T R A N S IS TO R S N P N S IL IC IU M , HO M O B A SE S 2N 3441 compì, of BDX 16 ^ Preferred device D is p o s itif recommandé LF large signal power amplification 140 V (120 V 3A CEO Am plification B F grands signaux de puissance


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    PDF BDY72 Ali20 CB-72 emetteur 2N3441 BDY72 3441 V560 2n 3441

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    2N2405

    Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
    Text: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s


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    PDF RCA-ZN1893 2N2405* RCA-2N2405 2N1893 2N2405 2N240S. transistor KD 503 kd 503 transistor TA2235A TA2235

    TMPT404

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D


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    PDF G5DM33Ö 0D03b07 BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B TMPT404

    TMPT404

    Abstract: No abstract text available
    Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A


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    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


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    PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224