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    2N 2219 Search Results

    2N 2219 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2219R-EL-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    5962-92219-000 Renesas Electronics Corporation OCTAL D FLIP FLOP W/CLOCK ENABLE 54FCT377T Visit Renesas Electronics Corporation
    77311-122-19LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical Header, Through Hole, Single Row, 19 Positions, 2.54 mm Pitch. Visit Amphenol Communications Solutions
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    2N 2219 Price and Stock

    Microchip Technology Inc 2N2219A

    TRANS NPN 50V 0.8A TO39
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    DigiKey 2N2219A Bulk 1,736 1
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    NAC 2N2219A 51
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    Suzhou Good-Ark Electronics Co Ltd 2N2219A

    TRANSISTOR, NPN, 50V, 0.8A, TO-3
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    Central Semiconductor Corp 2N2219A-PBFREE

    TRANS NPN 40V 0.8A TO39
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    DigiKey 2N2219A-PBFREE Box 926 1
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    Rochester Electronics LLC 2N2219AJTXV

    NPN SILICON SWITCHING TRANS, 30V
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    Central Semiconductor Corp 2N2219-PBFREE

    TRANS NPN 30V 0.8A TO39
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    2N 2219 Datasheets (229)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2219 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original PDF
    2N2219 Microsemi BJT, NPN, Switching Transistor, VCB0 60V, IC 0.8A - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original PDF
    2N2219 New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 On Semiconductor Bipolar Transistor, General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 On Semiconductor 2N2219 - TRANSISTOR 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, BIP General Purpose Small Signal Original PDF
    2N2219 Philips Semiconductors TRANS GP BJT NPN 30V 0.8A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
    2N2219 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 Semico Chip Type 2C2222A Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 STMicroelectronics HIGH-SPEED SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2219 Central Semiconductor NPN Silicon Transistor, TO-39 Scan PDF
    2N2219 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2219 Continental Device India Silicon Planar Switching Transistor Scan PDF
    2N2219 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2219 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N2219 Dionics NPN Si Transistor Scan PDF
    2N2219 Fairchild Semiconductor NPN small signal general purpose amplifier & switch. - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Scan PDF
    2N2219 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ...

    2N 2219 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N 2222 A NPN, TO-18

    Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
    Text: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A


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    PDF 2N708 2N709 2N753 2N 2222 A NPN, TO-18 2N2222 2n h 2222a 2222a NPN 706a 709a 2222 NPN

    TT 2222 npn

    Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
    Text: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904


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    PDF 2N708 2N709 2N753 000000000000a l000000 T0-18 TT 2222 npn 709a 2n h 2222a 2N698 2222 NPN

    2222 NPN

    Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
    Text: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905


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    PDF 2N708 2N709 2N753 NPN50 2222 NPN 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2369A

    2N2222Metal

    Abstract: 2N2222 2n2221 br 2222 npn 222-1 2n 2222 -31 2221 2N 2222 2221-2N npn 2222
    Text: 2N 2221 2N 2222 SILICON PLANAR NPN HIGH-SPEED SWITCHES The 2N 2218, 2N 2219, 2N 2221 and 2N 2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N 2218 and 2N 2219 and in Jedec TO-18 (for 2N 2221 and 2N 2222) metal cases. They are designed for high-speed switching applications at collector currents up


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    PDF M50mA 2N2222Metal 2N2222 2n2221 br 2222 npn 222-1 2n 2222 -31 2221 2N 2222 2221-2N npn 2222

    2222A

    Abstract: 2n h 2222a 2221A 2219a 2222a NPN 2n2222a 2N2219A 2N2218A 2222A transistors
    Text: 2N 2218 A 2N 2219 A 2N 2221A SILICON PLANAR NPN • “ *» HIGH-SPEED SWITCHES The 2N 2218A, 2N-2219A, 2N 2221 A and 2N 2222A are silicon planar epitaxial NPN tran­ sistors in Jedec TO-39 for 2N 2218A and 2N 2219A and in Jedec T O -18 (for 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col­


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    PDF 2N-2219A, Eix10 150mA 2222A 2n h 2222a 2221A 2219a 2222a NPN 2n2222a 2N2219A 2N2218A 2222A transistors

    2222a

    Abstract: 2n h 2222a 2218A 2219a z222a tr 2222a tr 2219a 2N2218A 2N2219A 2n 2222a
    Text: 2N 2218 A 2N 2219 A SILICON PLANAR NPN • HIGH-SPEED SWITCHES The 2N 2218A, 2N 2219A, 2N 2 2 21A and 2N 22 22A are silicon planar epitaxial NPN tran­ sistors in Jedec TO-39 for 2N 22 18 A and 2N 2219A and in Jedec T O -1 8 (fo r 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col­


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    2m2222

    Abstract: 2N2222 2N2222Metal 2N2221 2221 2N 2222 2221-2N 222-1 2N2218 br 2222 npn
    Text: 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN • 2222 H IG H - S P E E D S W IT C H E S The 2N 2 2 1 8 , 2N Jedec T O -3 9 fo r m etal cases. T he y to 5 0 0 m A , and 2 2 1 9 , 2N 2221 and 2N 2 2 2 2 are silico n p lanar e p ita xia l NPN transistors in 2 N 2 2 1 8 and 2N 2 2 1 9 and in Jedec T C I-1 8 ( fo r 2N 2221 and 2N 2222)


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    2n h 2222

    Abstract: No abstract text available
    Text: 3QE D • 7^237 0031113 T ■ S C S -T H O M S O N UOTM W i ^T-3>S-f3 2N 2218-2N 2219 2N 2221-2N 2222 S G S-TH0MS0N HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are si­ licon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218 and 2N2219 and in Jedec


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    PDF 2218-2N 2221-2N 2N2218, 2N2219, 2N2221 2N2222 2N2218 2N2219) 2N2222) 2n h 2222

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893


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    PDF O-5/TO205AD/TO-39

    2n h 2222a

    Abstract: 2N2218 2222a 2N5581 ip 2222A
    Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s


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    PDF 2N2218A 2N2219 2N2222 2N2218, /2N2219 O-205AD) 2N2218 /19/19A/22/22A 2n h 2222a 2222a 2N5581 ip 2222A

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N 2905a pnp transistor

    Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
    Text: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO


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    PDF 2N2905 2N 2905a pnp transistor 2904 st 2904 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A

    fairchild 2N2222A

    Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
    Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min


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    PDF QDE75D4 2N718A 2N1613 fairchild 2N2222A 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222

    6 volt npn

    Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450
    Text: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100


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    PDF 2N2218/21 2N2218A/21A 2N2219/22 2N2219A/22A DN2219A/22A 150mA 100KHz 100MH; 100mA 100mA 6 volt npn DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    s parameters of 2N2222

    Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
    Text: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c


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    PDF 2N2222 2N2218A 2N2219 2N2219A 2N2222A s parameters of 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit

    Untitled

    Abstract: No abstract text available
    Text: D at a S he e t No. 2 N 2 2 1 9 A L C=L SEMICONDUCTORS Type 2N2219AL G e n e ric P a rt N u m b e r: 2N 2219A Geometry 0400 P olarity NPN Q ual Level: J A N -J A N S REF: MIL-PRF-19500/251 Features: • General-purpose transistor for switching and amplifier applicatons.


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    PDF 2N2219AL MIL-PRF-19500/251 MiL-PRF-19500/251

    2N3019A

    Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15


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    PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3114 2N5682 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N3020 transistor 2n2270

    BD373

    Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
    Text: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800


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    PDF NSDU07 2IM3700 2M6731 PM3638 PN3638A BC239 BC309 BC368 BC369 O-236AB BD373 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05

    2N2219

    Abstract: 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A
    Text: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2 N T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X 2 2 1 9 ’A Compì, of 2N 2904, A - 2905, A Preferred device D isp o sitif recommandé - LF or HF small or large signal amplification A m p lific a tio n B F o u H F p e tits ou grands signaux


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    PDF 218A-2219A 2N2219 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A

    2N2219 transistor

    Abstract: Transistor 2N2219A 2n2219 2N221 2N2219A Silicon Epitaxial Planar Transistor philips 1N916 9L9V 2N2219/BC547 hie hre hfe
    Text: 11 N AUER PHILIPS/DISCRETE blE D • h t,S 3 1 3 1 > DDEÖDBl 34T ■ APX A ZN’^ y 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -39 m etal envelope w ith th e c o lle c to r connected t o th e case. T he y are p rim a r­ ily intended fo r high speed switching. The 2N 2 2 1 9 is also suitable f o r d.c. and v .h .f./u .h .f. am plifiers.


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    PDF 2N2219A 2N2219 7Z88673 7Z85736 200S2; 2N2219 transistor Transistor 2N2219A 2N221 2N2219A Silicon Epitaxial Planar Transistor philips 1N916 9L9V 2N2219/BC547 hie hre hfe

    N2219

    Abstract: 2N2219 F133 2N2218 2N2218A Q62702-F109 Q62702-F133 Q62702-F59 Q62702-S29 siemens 2218
    Text: 2SC D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 - SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2218,2 N 2219,2 N 2218 A, and 2 N 2219 Aare epitaxial NPN silicon Planartransistors


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    PDF AKTIENGESELLSCHAF-2N2218A Q62702-F109 Q62702-F133 Q62702-S29 Q62702-F59 2N2218 2N2219 fl235J /cc-30 102mA N2219 F133 2N2218A Q62702-F59 siemens 2218

    Untitled

    Abstract: No abstract text available
    Text: 25C D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 -SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2 2 1 8 ,2 N 2 2 1 9 ,2 N 2 2 1 8 A, and 2 N 2 2 1 9 A a re epitaxial NPN silicon Planartransistors


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    PDF IM2219 fl23SbOS 102mA