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    2MX1 Search Results

    2MX1 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LM2672MX-12/NOPB Texas Instruments SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-SOIC -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    2MX1 Price and Stock

    Rochester Electronics LLC NCP152MX150280TCG

    IC REG LIN 1.5V/2.8V 150MA 6XDFN
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    DigiKey NCP152MX150280TCG Bulk 63,000 1,043
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    Microchip Technology Inc PIC32MX130F064BT-I-ML

    IC MCU 32BIT 64KB FLASH 28QFN
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    DigiKey PIC32MX130F064BT-I-ML Digi-Reel 4,655 1
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    PIC32MX130F064BT-I-ML Cut Tape 4,655 1
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    PIC32MX130F064BT-I-ML Reel 3,200 1,600
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    Microchip Technology Inc PIC32MX154F128BT-V-MM

    IC MCU 32BIT 128KB FLASH 28QFN
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    DigiKey PIC32MX154F128BT-V-MM Reel 1,600 1,600
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    Microchip Technology Inc PIC32MX154F128BT-I-MM

    IC MCU 32BIT 128KB FLASH 28QFN
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    DigiKey PIC32MX154F128BT-I-MM Digi-Reel 1,400 1
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    Microchip Technology Inc PIC32MX150F128DT-I-PT

    IC MCU 32BIT 128KB FLASH 44TQFP
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    DigiKey PIC32MX150F128DT-I-PT Digi-Reel 1,204 1
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    PIC32MX150F128DT-I-PT Cut Tape 1,204 1
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    2MX1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    K7A323600M

    Abstract: K7B321825M-QC65 K7A321800M
    Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		PDF K7A323600M K7A321800M 1Mx36 2Mx18 2Mx18-Bit 165FBGA K7A3236 165FBGA K7A323600M K7B321825M-QC65 K7A321800M

    K7M321825M

    Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
    Text: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		PDF K7M323625M K7M321825M 1Mx36 2Mx18 2Mx18-Bit 165FBGA 165FBGA x18/x36 K7M321825M K7M321825M-QC75 K7M323625M K7M323625M-QC75

    K1S3216B1C-FI70

    Abstract: K1S3216B1C K1S3216B1C-I
    Text: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0


    Original     		PDF K1S3216B1C 2Mx16 100uA 55/Typ. 35/Typ. K1S3216B1C-FI70 K1S3216B1C K1S3216B1C-I

    K7M321825M

    Abstract: K7M323625M
    Text: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAM TM 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O


    Original     		PDF K7M323625M K7M321825M 1Mx36 2Mx18 2Mx18-Bit 65V/-0 100-TQFP-1420A /119BGA K7M321825M K7M323625M

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		PDF WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28

    MASK ROM 32M PROGRAM

    Abstract: K3N6C4000E-DC mask rom A2034
    Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)


    Original     		PDF K3N6C4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF 42-DIP-600 K3N6C4000E-DC MASK ROM 32M PROGRAM mask rom A2034

    A94-10

    Abstract: 4000E
    Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF 4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF A94-10 4000E

    Untitled

    Abstract: No abstract text available
    Text: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7P323674C K7P321874C 1Mx36 2Mx18 119BGA

    Untitled

    Abstract: No abstract text available
    Text: Advance K1S321615C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark April 18, 2003 Advanced The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K1S321615C 2Mx16 K1S321615C 55/Typ. 35/Typ.

    Untitled

    Abstract: No abstract text available
    Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8


    Original     		PDF WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O0-31 A0-18

    SAMSUNG MCP

    Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
    Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75Ex 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    Untitled

    Abstract: No abstract text available
    Text: IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES •                   1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original     		PDF IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 2Mx18 400MHz 333MHz 300MHz

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		PDF WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28

    Untitled

    Abstract: No abstract text available
    Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323682M K7Q321882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit

    WEDF1M32B-XXX5

    Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
    Text: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature


    Original     		PDF WEDF1M32B-XXX5 1Mx32 120ns 1Mx32, 2Mx16 16KByte WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 32KByte WEDF1M32B-XXX5 1m 0880

    jedec ms-024

    Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
    Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows


    Original     		PDF WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit

    Untitled

    Abstract: No abstract text available
    Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K7R323684C K7R321884C K7R320984C 1Mx36, 2Mx18

    mask rom

    Abstract: No abstract text available
    Text: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)


    Original     		PDF KM23V32005D TY/KM23S32005D 32M-Bit /2Mx16) 304x8 152x16 100/30ns 150/50ns KM23S32005D mask rom

    Untitled

    Abstract: No abstract text available
    Text: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)


    Original     		PDF KM23V32000D TY/KM23S32000D 32M-Bit /2Mx16) 304x8 152x16 100ns 150ns KM23S32000D

    Untitled

    Abstract: No abstract text available
    Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		PDF KM23C32000C 32M-Bit /2Mx16) 304x8 152x16 100ns 44-TSOP2-400

    F2M1

    Abstract: No abstract text available
    Text: !. es 2Mx16 5V FLASH MODULE W F 2 M 1 6 -X X X 5 ADVANCED1 FEATURES • Access Time of 9 0 ,1 2 0 ,150ns Low Po w er C M O S ■ Packaging: Data Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66-pin, PGA Type, 1.185 inch square, Herm etic Ceramic


    OCR Scan     		PDF 2Mx16 150ns 66-pin, F2M1

    Untitled

    Abstract: No abstract text available
    Text: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic


    OCR Scan     		PDF 32B-XXX5 1Mx325V/12V 120ns 1Mx32, 2Mx16 V/12V 32B-XG2TX5 32B-XHX5 66-pin, 5/12V)