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    Samsung Semiconductor K1S3216B1C-FI70

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    K1S3216B1C Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1S3216B1C Samsung Electronics Original PDF
    K1S3216B1C-BI85 Samsung Electronics MEMORY: 2Mx16 Bit Uni-Transistor Random Access Memory Original PDF
    K1S3216B1C-FI70 Samsung Electronics MEMORY, 2Mx16 Bit Uni-Transistor Random Access Memory Original PDF
    K1S3216B1C-FI85 Samsung Electronics MEMORY, 2Mx16 Bit Uni-Transistor Random Access Memory Original PDF
    K1S3216B1C-I Samsung Electronics Original PDF

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    K1S3216B1C-FI70

    Abstract: K1S3216B1C K1S3216B1C-I
    Text: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0


    Original     		PDF K1S3216B1C 2Mx16 100uA 55/Typ. 35/Typ. K1S3216B1C-FI70 K1S3216B1C K1S3216B1C-I