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onsemi NCV8152MX180280TCG IC REG LINEAR 1.8V/2.8V 6XDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NCV8152MX180280TCG	Cut Tape	39,530		1	1 $0.99 10 $0.598 100 $0.3802 1000 $0.25881 10000 $0.22718	Buy Now
	NCV8152MX180280TCG	Digi-Reel	39,530		1	1 $0.99 10 $0.598 100 $0.3802 1000 $0.25881 10000 $0.22718	Buy Now
	NCV8152MX180280TCG	Reel	35,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.17675	Buy Now
Avnet Americas	NCV8152MX180280TCG	Reel		16 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	NCV8152MX180280TCG	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now
Avnet Asia	NCV8152MX180280TCG			16 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	NCV8152MX180280TCG			17 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	NCV8152MX180280TCG			18 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NCP702MX18TCG IC REG LINEAR 1.8V 200MA 6XDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NCP702MX18TCG	Cut Tape	110		1	1 $1.56 10 $0.959 100 $0.6246 1000 $0.6246 10000 $0.6246	Buy Now
	NCP702MX18TCG	Digi-Reel	110		1	1 $1.56 10 $0.959 100 $0.6246 1000 $0.6246 10000 $0.6246	Buy Now
	NCP702MX18TCG	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	NCP702MX18TCG	Bulk			1	1 $0.587 10 $0.557 100 $0.499 1000 $0.499 10000 $0.499	Get Quote
Rochester Electronics	NCP702MX18TCG		108,590		1	1 $0.3983 10 $0.3983 100 $0.3744 1000 $0.3386 10000 $0.3386	Buy Now
Flip Electronics	NCP702MX18TCG		2,029			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NCV8702MX18TCG IC REG LINEAR 1.8V 200MA 6XDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NCV8702MX18TCG	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.57375	Buy Now
Rochester Electronics	NCV8702MX18TCG		63,806		1	1 $0.6694 10 $0.6694 100 $0.6292 1000 $0.569 10000 $0.569	Buy Now
onsemi NCP702MX18TCGEVB EVAL BOARD FOR NCP702
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NCP702MX18TCGEVB	Box			1	1 $48.53 10 $48.53 100 $48.53 1000 $48.53 10000 $48.53	Buy Now
Avnet Americas	NCP702MX18TCGEVB	Bulk			14	1 - 10 - 100 $45.12375 1000 $43.6715 10000 $43.6715	Buy Now
Newark	NCP702MX18TCGEVB	Bulk			4	1 $49.14 10 $49.14 100 $49.14 1000 $49.14 10000 $49.14	Buy Now
onsemi NCP152MX180180TCG LDO REGULATOR, 150 MA, DUAL OUTP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NCP152MX180180TCG	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2M X 18 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HYS64V2100G Abstract: No abstract text available Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation	Original	64-Bit 72-Bit HYS64V2100G HYS72V2100G DM168-27 HYS64 V2100G L-DIM-168-C1 DM168-C1	PDF
HYS64V2100G Abstract: No abstract text available Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 1 bank 2M x 64, 2M x 72 organisation	Original	64-Bit 72-Bit HYS64V2100G HYS72V2100G DM168-27 HYS64 V2100G L-DIM-168-C1 DM168-C1	PDF
Untitled Abstract: No abstract text available Text: TS 35 x 7,5 terminal rail W 7,5 mm Terminal rails TS 35 x 7.5 Unperforated Material thickness Length 1 mm 2m Qty. 2m Order No. 0330800000 1 mm TS 35X7.5 1M/ST/ZN 16 mm2 1 mm 2m 2m 0383400000 1m 10 m 0383410000 Stainless steel TS 35X7.5 2M/CRN 16 mm2 1 mm 2m	Original	2M/ST/Z848290000 35X15 35X15/LL 35X15LL/5 35X15/LL/6x18 35X15/LL/6x25	PDF
4MX72 BIT SDRAM Abstract: VS47217801BTGE VS2721 Text: VS27217801BTGE,VS47217801BTGE 2M,4MX72-Bit SDRAM Module VIS Description The VS27217801BTGE and VS47217801BTGE are 2M x 72 - bit and 4M x 72 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 9/18 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS27217801BTGE and	Original	VS27217801BTGE VS47217801BTGE 4MX72-Bit VG3617801BT) VS27217801BTGE, VS47217801BTGE 4MX72 BIT SDRAM VS2721	PDF
Untitled Abstract: No abstract text available Text: CY7C1317BV18 CY7C1319BV18 CY7C1321BV18 PRELIMINARY 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM	Original	CY7C1317BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit 300-MHz 600MHz) CY7C1917BV18 BB165E	PDF
Untitled Abstract: No abstract text available Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth	Original	CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 CY7C11461KV18)	PDF
Untitled Abstract: No abstract text available Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth	Original	CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11771KV18, CY7C11701KV18 CY7C11661KV18)	PDF
CY7C11681KV18 Abstract: 3M Touch Systems Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth	Original	CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11681KV18 3M Touch Systems	PDF
IS61LPS204836B-200TQ Abstract: IS61VVPS204836B-166B3L Text: IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B 2M x 36, 2M x 32, 4M x 18 72 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM ADVANCED INFORMATION OCTOBER 2012 FEATURES DESCRIPTION • Internal self-timed write cycle	Original	IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B MS-028 IS61LPS204836B-200TQ IS61VVPS204836B-166B3L	PDF
IBM0117800B2M Abstract: IBM0117800P2M Text: IBM0117800 2M x 811/10, 5.0V. IBM0117800P2M x 811/10, 3.3V, LP, SR. IBM0117800M 2M x 811/10, 5.0V, LP, SR. IBM0117800B2M x 811/10, 3.3V. IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply	Original	IBM0117800 IBM0117800P2M IBM0117800M IBM0117800B2M IBM0117800M IBM0117800B IBM0117800P	PDF
Untitled Abstract: No abstract text available Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 450 MHz Clock for High Bandwidth	Original	CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit CY7C11571KV18, CY7C11501KV18 CY7C11461KV18)	PDF
Untitled Abstract: No abstract text available Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 550 MHz Clock for High Bandwidth	Original	CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit CY7C11771KV18, CY7C11701KV18 CY7C11661KV18)	PDF
CY7C1317BV18 Abstract: CY7C1319BV18 CY7C1321BV18 CY7C1917BV18 Text: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM	Original	CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, CY7C1321BV18 CY7C1317BV18 CY7C1319BV18 CY7C1917BV18	PDF
IS61LPS204832B Abstract: No abstract text available Text: IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B 2M x 36, 2M x 32, 4M x 18 72 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM ADVANCED INFORMATION FEBRUARY 2013 FEATURES DESCRIPTION • Internal self-timed write cycle	Original	IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B VS61LPS204836B, IS61LPS204832B	PDF

IBM0117800B2M Abstract: IBM0117800P2M Text: IBM0117800 2M x 811/10, 5.0V. IBM0117800P2M x 811/10, 3.3V, LP, SR. IBM0117800M 2M x 811/10, 5.0V, LP, SR. IBM0117800B2M x 811/10, 3.3V. IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply	Original	IBM0117800 IBM0117800P2M IBM0117800M IBM0117800B2M IBM0117800M IBM0117800B IBM0117800P	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation	OCR Scan	64-Bit 72-Bit HYS64V2000GU HYS72V2000GU HYS64 V2000GU	PDF
doz 112 Abstract: V2000G 235L Text: SIEM EN S 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation	OCR Scan	64-Bit HYS64V2000GU 72-Bit HYS72V2000GU 0235bD5 V2000G 235b05 doz 112 235L	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation	OCR Scan	64-Bit 72-Bit HYS64V2000GU HYS72V2000GU HYS64 V2000GU 91X127 QLD06877	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation	OCR Scan	64-Bit 72-Bit HYS64V2100G HYS72V2100G 19-2S HYS64 V2100G 535bGS I1524Ã	PDF
KM49RC2H-A60 Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words	OCR Scan	KM48RC2H/KM49RC2H 18Mbit 667MHz SHP-32 KM49RC2H-A60 RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules * 168 Pin JED EC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications * 1 bank 2M x 64, 2M x 72 organisation	OCR Scan	64-Bit 72-Bit HYS64V2100G HYS72V2100G L-DIM-168-27 DM168-27 HYS64 V2100G L-DIM-168-C1 DM168-C1	PDF
s2mX Abstract: No abstract text available Text: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation • Optimized for byte-write non-parity or ECC applications	OCR Scan	64-Bit 72-Bit HYS64V2000GU HYS72V2000GU HYS64 V2000GU s2mX	PDF
Untitled Abstract: No abstract text available Text: STI322000D1 -xxV 72-PIN DIMMS 2M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000D1 is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322000D1 consist of four CMOS 2M x 8 DRAMs in 28-pin	OCR Scan	STI322000D1 STI322000D1-60 STI322000D1-80V 110ns 130ns 150ns 72-PIN	PDF
Untitled Abstract: No abstract text available Text: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit	OCR Scan	KM29V16000ATS KM29V16000ATS/RS 264-byte 250ps -TSOP2-400F -TSOP2-400R 0031flfll	PDF

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2M X 18 Search Results

2M X 18 Price and Stock

onsemi NCV8152MX180280TCG

onsemi NCP702MX18TCG

onsemi NCV8702MX18TCG

onsemi NCP702MX18TCGEVB

onsemi NCP152MX180180TCG

2M X 18 Datasheets Context Search

HYS64V2100G

HYS64V2100G

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4MX72 BIT SDRAM

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CY7C11681KV18

IS61LPS204836B-200TQ

IBM0117800B2M

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CY7C1317BV18

IS61LPS204832B

IBM0117800B2M

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doz 112

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KM49RC2H-A60

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s2mX

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