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    concurrent rdram

    Abstract: RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72
    Text: Preliminary Information Concurrent RDRAM ® 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) RAMBUS Overview The 16/18/64/72-Mbit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns


    Original     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-Mbit 600MHz DL0029-07 concurrent rdram RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    GS8161Z18AT-300

    Abstract: gs816
    Text: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5


    Original     		PDF GS8161Z18/36AT-300/275/250/225/200 GS8161Z18/36AT 100-pin 8161Z18A GS8161Z18AT-300 gs816

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    CY7C1355C

    Abstract: No abstract text available
    Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead


    Original     		PDF CY7C1355C, CY7C1357C CY7C1355C/CY7C1357C CY7C1355C

    Untitled

    Abstract: No abstract text available
    Text: CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth


    Original     		PDF CY7C1319KV18/CY7C1321KV18 18-Mbit CY7C1319KV18 333-MHz CY7C1321KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1163KV18/CY7C1165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • Separate independent read and write data ports


    Original     		PDF CY7C1163KV18/CY7C1165KV18 18-Mbit 550-MHz CY7C1165KV18

    Untitled

    Abstract: No abstract text available
    Text:  CY7C1143KV18/CY7C1145KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • Separate independent read and write data ports


    Original     		PDF CY7C1143KV18/CY7C1145KV18 18-Mbit 450-MHz CY7C1145KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C2168KV18/CY7C2170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36)


    Original     		PDF CY7C2168KV18/CY7C2170KV18 18-Mbit 550-MHz CY7C2168KV18 CY7C2170KV18

    CY7C1382DV33-200BZI

    Abstract: No abstract text available
    Text: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation


    Original     		PDF CY7C1380DV33 CY7C1382DV33 18-Mbit CY7C1380DV33/CY7C1382DV33 CY7C1382DV33-200BZI

    Untitled

    Abstract: No abstract text available
    Text: CY7C1148KV18/CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36) With Read Cycle Latency of 2.0 cycles:


    Original     		PDF CY7C1148KV18/CY7C1150KV18 18-Mbit 450-MHz CY7C1148KV18 CY7C1150KV18

    renesas tcam

    Abstract: tcam renesas idt tcam Ayama 20000 cypress tcam Sahasra 50000 NSE sahasra Sahasra 50000 tcam tcam cypress
    Text: CYNSE20512 CYNSE20256 PRELIMINARY Ayama 20000 Network Search Engine Family Data Sheet Features — QDR-II up to 250 MHz, Burst-of-2 and Burst-of-4 — Convenient “Clamshellable” pinout for ease of board design • Fast search rates — Up to 266 million searches per second MSPS in


    Original     		PDF CYNSE20512 CYNSE20256 72/144-bit 32/288-bit 576-bit 32-bit 166/200LVCMOS/200HSTL renesas tcam tcam renesas idt tcam Ayama 20000 cypress tcam Sahasra 50000 NSE sahasra Sahasra 50000 tcam tcam cypress

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44164095B-A μPD44164185B-A 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0016EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44164095B-A is a 2,097,152-word by 9-bit and the μPD44164185B-A is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell.


    Original     		PDF PD44164095B-A PD44164185B-A 18M-BIT R10DS0016EJ0100 PD44164095B-A 152-word PD44164185B-A 576-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the


    Original     		PDF PD44165084B-A PD44165094B-A PD44165184B-A PD44165364B-A 18M-BIT R10DS0018EJ0100 PD44165084B-A 152-word PD44165094B-A

    Untitled

    Abstract: No abstract text available
    Text: CY7C1312KV18, CY7C1314KV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1312KV18 – 1 M x 18


    Original     		PDF 18-Mbit CY7C1312KV18, CY7C1314KV18 CY7C1312KV18

    CYD01S36V

    Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA
    Text: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and


    Original     		PDF CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 32K/64K/128K/256K/512 FLEx36 18-Mbit CYD01S36V CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA

    GS8162Z18B

    Abstract: GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
    Text: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and


    Original     		PDF GS8162Z18/36B 165-Bump GS8162Z18B GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250

    GS8160ZV18CT

    Abstract: GS8160ZV18CT-250 GS8160ZV18CT-300 GS8160ZV18CT-333
    Text: Preliminary GS8160ZV18/36CT-333/300/250 100-Pin TQFP Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with


    Original     		PDF GS8160ZV18/36CT-333/300/250 100-Pin 100-lead 8160ZVxxC GS8160ZV18CT GS8160ZV18CT-250 GS8160ZV18CT-300 GS8160ZV18CT-333

    hfdw

    Abstract: No abstract text available
    Text: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC)


    OCR Scan     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-M 600MHz hfdw

    TC59R1809

    Abstract: No abstract text available
    Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK


    OCR Scan     		PDF 18MBit TC59R0409VK TC59R1809VK TC85RT000VK SVP32 SVP42 TC59S1604FT/FTL-10 TC59S1604FT/FTL-12 C59S1608FT/FTL-10 TC59S1608FT/FTL-12 TC59R1809

    samsung concurrent rdram

    Abstract: RDRAM CONCURRENT KM49RC2H-A60 samsung datecode rdram concurrent Samsung concurrent rdram concurrent RDRAM 72 RDRAM Clock concurrent rdram samsung
    Text: Preliminary KM48 9 RC2H Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs (RDRAM ) are Part No. Org. frequency by 8 or 9 bits. They are capable of bursting unlimited lengths of KM49RC2H-A53 2M x 9 533Mhz data at 1.5ns per byte (12.0ns per eight bytes). The use of Ram­


    OCR Scan     		PDF 18Mbit 667MHz SHP-32 samsung concurrent rdram RDRAM CONCURRENT KM49RC2H-A60 samsung datecode rdram concurrent Samsung concurrent rdram concurrent RDRAM 72 RDRAM Clock concurrent rdram samsung

    RDRAM CONCURRENT

    Abstract: samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H
    Text: Preliminary Concurrent RDRAM KM48 9 RC2H 16/18Mbit R D R A M 2M X 8/9bit Concurrent RAMBUS DRAM Revision 0.7 February 1998 Rev. 0.7 (Feb. 1998) Preliminary Concurrent RDRAM KM48(9)RC2H Revision History Revision 0.5 (October 1997) - Preliminary • . Changed Peak TrasferRate from 700Mbps to 667Mbps. (page 1)


    OCR Scan     		PDF 16/18Mbit 700Mbps 667Mbps. SHP-32 RDRAM CONCURRENT samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H

    KM49RC2H-A60

    Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram
    Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words


    OCR Scan     		PDF KM48RC2H/KM49RC2H 18Mbit 667MHz SHP-32 KM49RC2H-A60 RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram

    Untitled

    Abstract: No abstract text available
    Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted


    OCR Scan     		PDF E2G1059-18-74 16M/18Mb MSM5716C50/M 5718C50/ D5764802 /64-M