Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2GHZ Search Results

    2GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DC753A Analog Devices LT5526EUF - 1MHz-2GHz Mixer Visit Analog Devices Buy
    DC945A Analog Devices LT5572EUF - 2GHz I/Q Modulator Visit Analog Devices Buy
    LTC5549IUDB#TRPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5548IUDB#TRPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    LTC5549IUDB#TRMPBF Analog Devices 2GHz to 14GHz Microwave Mixer Visit Analog Devices Buy
    SF Impression Pixel

    2GHZ Price and Stock

    ADLINK Technology Inc CORE I3-2330E 2.2GHZ FCPGA988

    CORE I3-2330E, 2.2GHZ, 3MB CACHE, - Bulk (Alt: CORE I3-2330E 2.2G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CORE I3-2330E 2.2GHZ FCPGA988 Bulk 13 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ADLINK Technology Inc XEON E5-2620 2GHZ FCLGA2011

    PROCESSOR, Intel Xeon E5-2620, 2.0GHz, FCLGA2011, ECC Memory - Bulk (Alt: XEON E5-2620 2GHZ FCLGA2011)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XEON E5-2620 2GHZ FCLGA2011 Bulk 13 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ADLINK Technology Inc CORE2 DUE 2.2GHZ UFCPGA-478

    CPU CORE2 DUO T7500 - Bulk (Alt: CORE2 DUE 2.2GHZ UFCPGA-478)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CORE2 DUE 2.2GHZ UFCPGA-478 Bulk 13 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ADLINK Technology Inc CPU Core i7-4790S 3.2GHz FCLGA1150

    CPU - Central Processing Units CPU, Core i7-4790S, 3.20GHz, 4-Core, 8MB SmartCache, Haswell, CM8064601561014 SR1QM, Step:C0, MM# 931984
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CPU Core i7-4790S 3.2GHz FCLGA1150
    • 1 $479.51
    • 10 $465.08
    • 100 $465.08
    • 1000 $465.08
    • 10000 $465.08
    		Get Quote

    ADLINK Technology Inc Xeon E3-1225V2 3.2GHz FCLGA1155

    CPU - Central Processing Units CPU, Xeon E3-1225 v2, 3.20GHz, 4-Core, 8MB SmartCache, Ivy Bridge, CM8063701160603 SR0PJ, Step:E1, MM# 919975
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Xeon E3-1225V2 3.2GHz FCLGA1155
    • 1 $319.8
    • 10 $306.27
    • 100 $299.52
    • 1000 $299.52
    • 10000 $299.52
    		Get Quote
    Find more 2GHZ price and stock on Findchips.com

    2GHZ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2GHz LOW NOISE AMPLIFIER WITH THE BFG410W NXP Semiconductors 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W Original PDF
    2GHz LOW NOISE AMPLIFIER WITH THE BFG425W NXP Semiconductors 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Original PDF
    2GHZUDR Philips Semiconductors 2 GHz Driver-Amplifier with the BFG425W Original PDF

    2GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Micrel, Inc. 3.3V/5V 3.2Gbps CML LOW-POWER LIMITING POST AMPLIFIER W/TTL LOS SY88973V SY88973V DESCRIPTION FEATURES • Multi-rate up to 3.2Gbps operation ■ Wide gain-bandwidth product • 38dB differential gain • 2GHz 3dB bandwidth ■ Low noise 50Ω CML data outputs


    Original     		PDF SY88973V 800mVPP 15psPP M9999-081905

    Untitled

    Abstract: No abstract text available
    Text: 2.5V, 2GHz ANY DIFF. IN-TO-LVDS Precision Edge SY89872U PROGRAMMABLE CLOCK DIVIDER/FANOUT Final BUFFER WITH INTERNAL TERMINATION FEATURES DESCRIPTION • Guaranteed AC performance over temperature and voltage: • >2GHz FMAX • < 750ps Tpd matched delay between banks


    Original     		PDF SY89872U 750ps 200ps

    EPA240D

    Abstract: No abstract text available
    Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EPA240D 33dBm EPA240D

    513 s12 datasheet

    Abstract: EPA060BV EPA060B
    Text: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET  • • • • • • • •  +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EPA060B/EPA060BV EPA060B EPA060BV 18GHz EPA060B MA162 Rn/50 513 s12 datasheet

    J64-1

    Abstract: UPF20120 ultrarf J296 J6-41 J641
    Text: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum


    Original     		PDF UPF20120 30dBc J64-1 UPF20120 ultrarf J296 J6-41 J641

    NN12

    Abstract: P35-4230-000-200
    Text: P35-4230-000-200 GaAs MMIC SPST TERMINATED SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; 1.6dB typ at 2GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF


    Original     		PDF P35-4230-000-200 P35-4230-000-200 462/SM/01745/200 NN12

    NN12

    Abstract: P35-4250-0 P35-4250-3
    Text: P35-4250-0 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Small die size; 0.67 mm 0.6dB typ at 2GHz 2 Description The P35-4250-0 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is


    Original     		PDF P35-4250-0 P35-4250-0 462/SM/00027/200 NN12 P35-4250-3

    GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

    Abstract: NN12 P35-4215-0 P35-4215-1R P35-4215-1T
    Text: P35-4215-0 GaAs MMIC SPDT REFLECTIVE/NON-REFLECTIVE SWITCH, DC - 4GHz Features • • Broadband performance Low insertion loss; 0.5dB typ at 2GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch


    Original     		PDF P35-4215-0 P35-4215-0 462/SM/00025/200 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz NN12 P35-4215-1R P35-4215-1T

    HK1005

    Abstract: LQW15A NJG1119PB4
    Text: NJG1119PB4 W-CDMA 用デュアル LNA GaAs MMIC •概要 NJG1119PB4 はW-CDMA 800MHz/2GHz 帯マルチバンド 端末での使用を主用途とする LNA です。 インバータ回路を内蔵しており、2 ビットのコントロール 電圧で 800MHz 帯/2.1GHz 帯、High Gain モード/Low Gain


    Original     		PDF NJG1119PB4 NJG1119PB4 800MHz/2GHz 800MHz FFP12-B4 FFP12-B4Package 2140MHz HK1005 LQW15A

    HK1005

    Abstract: LQW15A NJG1122PB4 h144
    Text: NJG1122PB4 W-CDMA 用デュアル LNA GaAs MMIC •概要 NJG1122PB4 はW-CDMA 800MHz/2GHz 帯マルチバンド 端末での使用を主用途とする LNA です。 インバータ回路を内蔵しており、2 ビットのコントロール 電圧で 800MHz 帯/2.1GHz 帯、High Gain モード/Low Gain


    Original     		PDF NJG1122PB4 NJG1122PB4 800MHz/2GHz 800MHz FFP12-B4 FFP12-B4Package 2140MHz HK1005 LQW15A h144

    20GHZ

    Abstract: FMA3008 MIL-HDBK-263
    Text: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the


    Original     		PDF FMA3008 20GHZ 35mmx1 FMA3008 23dBm -10dB FMA3008-000 FMA3008-000SQ MIL-HDBK-263

    100HZ

    Abstract: NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2006 NMA-2007 NMA-2008 NMA-2009
    Text: NMA 2000 NOISE MODULES 100HZ TO 2GHZ DESCRIPTION NMA 2000 OUTPUT CHARACTERISTICS MODEL* FREQUENCY NOISE OUTPUT LEVEL CURRENT FLATNESS mV/ ?V/=Hz dBm/ dBm/HzENR dB mA BAND BAND Typ. Typ. NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz ±0.5dB ±0.5dB 10 10 31.6 -27±3.0%


    Original     		PDF 100HZ NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz NMA-2003 100Hz-1MHz NMA-2004 100Hz-3MHz NMA-2005 NMA-2003 NMA-2006 NMA-2007 NMA-2008 NMA-2009

    P35-4250

    Abstract: NN12 P35-4250-3
    Text: Data sheet GaAs MMIC SP4T Reflective Switch, DC - 2GHz The P35-4250-3 is a high performance Gallium Arsenide single pole four throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective termination is presented


    Original     		PDF P35-4250-3 P35-4250-3 462/SM/00074/200 P35-4250 NN12

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


    OCR Scan     		PDF HN3C17FU 16GHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)


    OCR Scan     		PDF 2SC5096 S21el2

    LT 7706

    Abstract: LT 7207
    Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5097 -j250 LT 7706 LT 7207

    marking 93A

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type


    OCR Scan     		PDF Q62702-F1144 OT-143 900MHz marking 93A

    07027

    Abstract: 1.0037
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037

    Untitled

    Abstract: No abstract text available
    Text: CHS5039 ADVAN CED INFORMATION DC • 2GHz NON-REFLECTIVE SPDT SWITCH WITH DRIVER G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • • Low switching time • Integrated CMOS/TTL compatible driver • A v a ila b le in S O -8 su rfa ce m ount p la s tic


    OCR Scan     		PDF CHS5039 CHS5039-BBB/00 CHS5039 Ctl/90% Ctl/10%

    IC 4017 B

    Abstract: TELEDYNE PHILBRICK V to F TELEDYNE PHILBRICK OP AMP
    Text: TELEDYNE COMPONENTS EÖE D m fiTlTbüS QQÜbBQH H m 1443 Fast Settling Fully Differential FET Input Op Amp The combination of high speed, wide bandwidth, excellent D C characteristics, and low-gain stability place the 1443 at the forefront of high performance operational amplifiers. Its 2GHz


    OCR Scan     		PDF 130nsec 120MHz, GQQb204 IC 4017 B TELEDYNE PHILBRICK V to F TELEDYNE PHILBRICK OP AMP

    NJ 25 50 N

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 . Low Noise Figure, High Gain. . NF=1.8dB, I S21e |2=7.5dB f=2GHz M A X I M U M RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    OCR Scan     		PDF 2SC4322 UHJ1U1O\00? 2SC4315 NJ 25 50 N

    Q62702-F938

    Abstract: IS21E K2112
    Text: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F938 OT-23 IS21e K2112

    Untitled

    Abstract: No abstract text available
    Text: CHS5037 ADVANCED INFORMATION DC • 2GHz REFLECTIVE SPDT SWITCH WITH DRIVER G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • • Low switching time • Integrated CMOS/TTL compatible driver • Available in SO-8 surface mount plastic pac­


    OCR Scan     		PDF CHS5037 CHS5037-BBB/00 CHS5037 BBB/00

    Untitled

    Abstract: No abstract text available
    Text: R E V I SIONS 716-24 NOTES: I . M A T E R I A L S OF CONS TR UCT I ON BODY • 8 R AS S . WHITE BRONZE P L A T I N G CONTACT ONE P I E C E - B t C u , S I L V E R PLATEO I NSULATOR - PTFE 2 ELECTRICAL A. VSWR ( RETURN L O S S ) , M I N I M UM OC - 2GHz : 1. 05 ( 32 dB>


    OCR Scan     		PDF